BUZ 100

SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperature also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S

VDS
50 V

ID
60 A

RDS(on)
0.018

Package TO-220 AB

Ordering Code C67078-S1348-A2

Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A

ID IDpuls
240

TC = 101 C
Pulsed drain current

TC = 25 C
Avalanche energy, single pulse

EAS
250 dv/dt 6

mJ

ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C
Reverse diode dv/dt kV/s

IS = 60 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C

Gate source voltage Power dissipation

VGS Ptot

20 250

V W

TC = 25 C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Tj Tstg RthJC RthJA

-55 ... + 175 -55 ... + 175 0.6 75 E 55 / 175 / 56

C K/W

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BUZ 100

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit

V(BR)DSS
50 3 0.1 1 10 10 0.013 4 1 100 100 100

VGS = 0 V, ID = 0.25 mA, Tj = -40 C

Gate threshold voltage

VGS(th)
2.1

VGS=VDS, ID = 1 mA
Zero gate voltage drain current

IDSS
A nA A nA 0.018

VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C

Gate-source leakage current

IGSS RDS(on)

VGS = 20 V, VDS = 0 V
Drain-Source on-resistance

VGS = 10 V, ID = 60 A

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BUZ 100

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit

gfs
25 39 2400 800 300 -

S pF 3200 1200 450 ns 40 60

VDS 2 * ID * RDS(on)max, ID = 60 A
Input capacitance

Ciss Coss
-

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

Crss
-

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

td(on)

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

Rise time

tr
100 150

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

Turn-off delay time

td(off)
250 335

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

Fall time

tf
140 190

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

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BUZ 100

Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.4 70 0.16 60 240 V 1.8 ns C Values typ. max. Unit

ISM VSD trr Qrr

TC = 25 C
Inverse diode forward voltage

VGS = 0 V, IF = 120 A
Reverse recovery time

VR = 30 V, IF=lS, diF/dt = 100 A/s

Reverse recovery charge

VR = 30 V, IF=lS, diF/dt = 100 A/s

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BUZ 100

Power dissipation Ptot = (TC)

Drain current ID = (TC) parameter: VGS 10 V

65 A 55

260 W 220

Ptot

200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 C 180

ID

50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 C 180

TC

TC

Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C

10 3

Transient thermal impedance Zth JC = (tp) parameter: D = tp / T

10 0

K/W A

ID
=
10 2
) on S( D R

/ID

t = 30.0s p

S
100 s

ZthJC

10 -1

1 ms

10 -2 D = 0.50
10 ms

0.20 0.10 10 -3 single pulse 0.05 0.02 0.01

10

DC

10 0 0 10

10

V 10

10 -4 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

s 10

VDS

tp

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BUZ 100

Typ. output characteristics ID = (VDS) parameter: tp = 80 s

140 A 120

Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS

0.055
a b c d e

Ptot = 250W
l k j i h
VGS [V] a 4.0

0.045 RDS (on) 0.040 0.035 0.030 0.025 0.020 0.015 0.010
VGS [V] =
b j f g h i

ID

110 100 90 80 70
e g

b c d

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0

f e
f g h i

60 50
d

j k l

40 30 20
c

10 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

0.005 V 5.0 0.000 0

a 4.5 4.0 5.0

b 5.5

c 6.0

d 6.5

e f 7.0 7.5

g 8.0

h i j 9.0 10.0 20.0

20

40

60

80

120

VDS

ID

Typ. transfer characteristics ID = f (VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s VDS2 x ID x RDS(on)max

60 A

parameter: tp = 80 s, VDS2 x ID x RDS(on)max

40

S 50

ID

45 40

gfs

30

25 35 30 25 15 20 15 10 5 5 0 0 0 1 2 3 4 5 6 7 8 V VGS 10 0 10 20 30 40 A 60 10 20

ID

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Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 60 A, VGS = 10 V

0.050

Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA

4.6 V 4.0

0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60

98%

VGS(th)

3.6 3.2 2.8

typ

98%

2.4 2.0

2%

typ

1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 180

-20

20

60

100

180

Tj

Tj

Typ. capacitances

C = f (VDS) parameter:VGS = 0V, f = 1MHz

10 4

Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s

10 3

pF

IF Ciss
10 2

10 3

Coss
10 1

Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)

10 2 0 10 0 0.0

10

15

20

25

30

V 40 VDS

0.4

0.8

1.2

1.6

2.0

2.4

3.0

VSD

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BUZ 100

Avalanche energy EAS = (Tj ) parameter: ID = 60 A, VDD = 25 V RGS = 25 , L = 70 H

260 mJ 220

Typ. gate charge VGS = (QGate) parameter: ID puls = 90 A

16

EAS

200 180 160 140

VGS

12

10

0,2 VDS max

0,8 VDS max

8 120 100 80 60 40 20 0 20 0 40 60 80 100 120 140 C 180 0 10 20 30 40 50 60 70 80 nC 100 4 6

Tj

Q Gate

Drain-source breakdown voltage V(BR)DSS = (Tj )

62 V 60

V(BR)DSS 59
58 57 56 55 54 53 52 51 50 49 48 47 -60

-20

20

60

100

180

Tj

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BUZ 100

Package Outlines TO-220 AB Dimension in mm

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