ON Semiconductor

NPN

2N3055A

Complementary Silicon
High-Power Transistors

MJ15015 *

. . . PowerBase complementary transistors designed for high

power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dctodc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055 and MJ2955.

MJ2955A
PNP

MJ15016 *

CurrentGain BandwidthProduct @ IC = 1.0 Adc

fT = 0.8 MHz (Min) NPN

= 2.2 MHz (Min) PNP
Safe Operating Area Rated to 60 V and 120 V, Respectively

*ON Semiconductor Preferred Device

*MAXIMUM RATINGS

Symbol

2N3055A
MJ2955A

MJ15015
MJ15016

Unit

CollectorEmitter Voltage

VCEO

60

120

Vdc

CollectorBase Voltage

VCBO

100

200

Vdc

CollectorEmitter Voltage Base

Reversed Biased

VCEV

100

200

Vdc

EmitterBase Voltage

VEBO

7.0

Vdc

Collector Current Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation @ TC = 25
C

Derate above 25
C

PD

Rating

Operating and Storage Junction

Temperature Range

TJ, Tstg

115
0.65

180
1.03

65 to +200

15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS

CASE 107
TO204AA
(TO3)

Watts
W/
C

C

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Max

Unit

RJC

1.52

0.98

C/W

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data. (2N3055A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

March, 2001 Rev. 3

Publication Order Number:

2N3055A/D

PD(AV), AVERAGE POWER DISSIPATION (W)

2N3055A MJ15015 MJ2955A MJ15016

200

150
MJ15015
MJ15016

100

2N3055A
MJ2955A

50

25

50
75
100
125
150
TC, CASE TEMPERATURE (C)

Figure 1. Power Derating

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175

200

2N3055A MJ15015 MJ2955A MJ15016

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

60
120

Vdc

0.7
0.1

5.0
1.0

30
6.0

5.0
0.2

1.95
3.0

10
20
5.0

70
70

1.1
3.0
5.0

OFF CHARACTERISTICS (1)

*CollectorEmitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

2N3055A, MJ2955A
MJ15015, MJ15016

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)

2N3055A, MJ2955A
MJ15015, MJ15016

*Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

2N3055A, MJ2955A
MJ15015, MJ15016

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150
C)

2N3055A, MJ2955A
MJ15015, MJ15016

Emitter Cutoff Current

(VEB = 7.0 Vdc, IC = 0)

2N3055A, MJ2955A
MJ15015, MJ15016

IEBO

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s nonrepetitive)
2N3055A, MJ2955A
MJ15015, MJ15016
(VCE = 60 Vdc)

IS/b

ICEO

ICEV

mAdc

ICEV

mAdc
mAdc

mAdc

*SECOND BREAKDOWN

Adc

*ON CHARACTERISTICS (1)

DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

0.7

1.8

Vdc

fT

0.8
2.2

6.0
18

MHz

Cob

60

600

pF

td

0.5

tr

4.0

ts

3.0

tf

6.0

*DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

2N3055A, MJ15015
MJ2955A, MJ15016

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD
Delay Time
Rise Time

Storage Time

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4
0 4 Adc,
Adc
Duty
y Cycle
y

2%
tp = 25 s

Fall Time

(1) Pulse Test: Pulse Width = 300 s, Duty Cycle
2%.

*Indicates JEDEC Registered Data. (2N3055A)

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2N3055A MJ15015 MJ2955A MJ15016

TJ = 150C

100
70
50

hFE , DC CURRENT GAIN

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

200

-
55C

30
20

25C

VCE = 4.0 V

10
7
5
3
2

0.3 0.5 0.7 1

2
3
5
IC, COLLECTOR CURRENT (AMP)

0.2

10

15

2.8

TJ = 25C

2.4
2
IC = 1 A

1.6

0.8
0.4
0
0.005 0.01 0.02

f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

2
1.5
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 4 V

0.5
0

VCE(sat) @ IC/IB = 10
0.2 0.3

0.5 0.7

10

20

10

MJ2955A
MJ15016

5.0

2.0

2N3055A
MJ15015

1.0

0.1

0.2

0.3

0.5

1.0

2.0

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

Figure 4. On Voltages

Figure 5. CurrentGain Bandwidth Product

10
7
5

VCC
+
30 V
7.5

25 s
+13 V

3
t, TIME (s)

V, VOLTAGE (VOLTS)

2.5

0.05 0.1
0.2
0.5
IB, BASE CURRENT (AMP)

Figure 3. Collector Saturation Region

TC = 25C

8A

1.2

Figure 2. DC Current Gain

3.5

4A

SCOPE

30

tr, tf 10 ns
DUTY CYCLE = 1.0%

2
tr
1
0.7
0.5
0.3

1N6073

-11 V

VCC = 30 V
IC/IB = 10
TJ = 25C

0.2
-5 V

0.1

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

td
0.2

0.3

5
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMP)

Figure 7. TurnOn Time

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4

10 15

10
7
5

400

200

TJ = 25C
C, CAPACITANCE (pF)

t, TIME (s)

2N3055A MJ15015 MJ2955A MJ15016

ts

2
tf

0.1
0.7
0.5
0.3
0.2
0.1

VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25C
0.2

100

50

Cob

30

2
0.5 0.7 1
3
5
IC, COLLECTOR CURRENT (AMPS)

0.3

2N3055A
MJ15015
MJ2955A
MJ15016

Cib

10

20
1.0

15

2.0

5.0
10
20
50
100 200
VR, REVERSE VOLTAGE (VOLTS)

Figure 8. TurnOff Times

500 1000

Figure 9. Capacitances

COLLECTOR CUTOFF REGION

NPN
1000

VCE = 30 V

1000

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

10,000

PNP

100
TJ = 150C

10

100C
1.0

IC = ICES
REVERSE

0.1
0.01
+
0.2

FORWARD

25C
+
0.1

0
-
0.1
-
0.2
-
0.3
-
0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)

VCE = 30 V

100
10

TJ = 150C

1.0

100C
IC = ICES

0.1
REVERSE
0.01

25C

0.001
-
0.2

-
0.5

Figure 10. 2N3055A, MJ15015

+
0.5

0.1ms

10

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

0
+
0.1
+
0.2
+
0.3
+
0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)

20
30 s
100 s
1 ms

-
0.1

Figure 11. MJ2955A, MJ15016

20

FORWARD

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT

100 ms
dc

10
20
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10
5.0
1.0ms
2.0
1.0
0.5
0.2

100

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
15

Figure 12. Forward Bias Safe Operating Area

2N3055A, MJ2955A

100ms

dc

20
30
60
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

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120

2N3055A MJ15015 MJ2955A MJ15016

The data of Figures 12 and 13 is based on TC = 25
C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.

7There are two limitations on the power handling ability

of a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

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2N3055A MJ15015 MJ2955A MJ15016

PACKAGE DIMENSIONS
CASE 107
TO204AA (TO3)
ISSUE Z

A
N
C
T
E
D

SEATING
PLANE

2 PL

0.13 (0.005)
U

T Q

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

T Y

Q
0.13 (0.005)

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

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MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77

2N3055A MJ15015 MJ2955A MJ15016

PowerBase is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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2N3055A/D

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