UNISONIC TECHNOLOGIES CO.

, LTD UD4606
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications. DIP-8

Power MOSFET

FEATURES * N-Channel: 30V/6.9A

RDS(ON) = 22.5 m (typ.) @VGS =10V RDS(ON) = 34.5 m (typ.) @VGS=4.5V SOP-8

* P-Channel: -30V/-6A
RDS(ON) = 28 m (typ.) @VGS= -10V RDS(ON) = 44 m (typ.) @VGS= -4.5V

* Reliable and rugged SYMBOL

ORDERING INFORMATION
Ordering Number Lead Free Plating Halogen Free UD4606L-D08-T UD4606G-D08-T UD4606L-S08-R UD4606G-S08-R Package DIP-8 SOP-8 Pin Assignment Packing 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D2 D2 D1 D1 Tube S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel

www.unisonic.com.tw Copyright 2010 Unisonic Technologies Co., Ltd

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PIN CONFIGURATION

Power MOSFET

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ABSOLUTE MAXIMUM RATINGS (TA = 25, unless otherwise specified)
N-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note2) Pulsed Drain Current (Note2) Power Dissipation Junction Temperature Storage Temperature P-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 2) Pulsed Drain Current (Note 2) DIP-8 SOP-8 SYMBOL VDSS VGSS ID IDM PD TJ TSTG SYMBOL VDSS VGSS ID IDM

Power MOSFET

RATINGS 30 20 6.9 30 2.5 2 +150 -55 ~ +150

UNIT V V A A W W

RATINGS UNIT -30 V 20 V -6 A -30 A DIP-8 2.5 W Power Dissipation PD SOP-8 2 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t10sec

THERMAL DATA
PARAMETER DIP-8 Junction to Ambient (Note) SOP-8 Note: Surface Mounted on 1in 2 pad area, t10sec SYMBOL JA MIN TYP 74 67 MAX 110 80 UNIT /W /W

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ELECTRICAL CHARACTERISTICS (TA =25C, unless otherwise specified)
N-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS VGS=0V, ID=250uA VDS=24V, VGS=0V VDS=0V, VGS=20V VDS=VGS, ID=250uA VGS=10V, ID=6.9A VGS=4.5V, ID=5A

Power MOSFET

MIN 30

TYP

MAX UNIT V uA nA V m m pF pF pF ns ns ns ns nC nC nC 1 3 V A ns nC

1 100 1 1.9 22.5 34.5 680 102 77 4.6 4.1 20.6 5.2 13.8 1.82 3.2 0.76 16.5 7.8 MIN -30 -1 100 -1.2 -2 28 44 920 190 122 7.7 5.7 20.2 9.5 18.5 2.7 4.5 -2.4 35 58 TYP 3 28 42

DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V,VDS=15V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) VDS=15V, VGS=10V, RG=3, Turn-ON Rise Time tR RL=2.2 Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note2) QG VDS=15V, VGS=10V, ID=6.9A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=6.9A, dI/dt=100A/s Reverse Recovery Charge QRR P-CHANNEL PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=20V VDS=VGS, ID=-250uA VGS=-10V, ID=-6A VGS=-4.5V, ID=-5A

MAX UNIT V uA nA V m m pF pF pF ns ns ns ns nC nC nC

VGS=0V,VDS=-15V,f=1.0MHz

VDS=-15V, VGS=-10V, RG=3, RL=2.7 VDS=-15V, VGS=-10V, ID=-6A

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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V Diode Continuous Forward Current (Note3) IS Reverse Recovery Time tRR IDS=-6A, dI/dt=100A/s Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width 300s, duty cycle 2%. 2 3. Surface Mounted on 1in pad area, t10sec.

Power MOSFET

MIN

TYP -0.76 20 8.8

MAX UNIT -1 -4.2 V A ns nC

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TYPICAL CHARACTERISTICS
N-CHANNEL

Power MOSFET

Drain Current,ID (A)

60 50 40 30 20 10 0

On-Resistance vs. Drain Current and Gate Voltage

Drain Current,ID (A)

1000 900 800 700

Capacitance Characteristics f=1MHZ VGS=0V

VGS=4.5V

600 500 400 300 VGS=10V 200 100 0 CRSS 0

CISS

COSS

10 15 Drain Current,ID (A)

20

5 25 10 15 20 Drain to Source Voltage,VDS (V)

30

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Reverse Drain Current,IS (A)

Drain to Source OnResistance,RDS(ON) (m)

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TYPICAL CHARACTERISTICS(Cont.)
Gate- Charge Characteristics 10 Gate to Source Voltage,VGS (V) 8 6 4 2 0 0 2 4 6 8 10 Gate Charge,QG (nC) 12 14 VDS=15V ID=6.9A 30 Power (W) 40

Power MOSFET
Single Pulse Power Rating Junctionto-Ambient TJ(Max)=150 TA=25

20

10

0 0.001 0.01 0.1 1 10 Pulse Width (s) 100 1000

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Normalized Transient Thermal Resistance,ZJA

Drain Current,ID (A)

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TYPICAL CHARACTERISTICS(Cont.)
P-CHANNEL
On-Region Characteristics -10V -6V -5V Drain Current,-ID (A) -4.5V 25 20 15 10 5 0 0 1 2 3 4 Drain to Source Voltage,-VDS (V) 5

Power MOSFET

30 25 Drain Current,-ID (A) 20 15 10 5 0

30

Transfer Characteristics VDS=-5V

-4V

-3.5V VGS=-3V

125

25

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Gate to Source Voltage,-VGS (V)

60 55 Drain to Source OnResistance,RDS(ON) (m) 50 45 40 35 30 25 20 15 10 0

On-Resistance vs. Drain Current and Gate Voltage

1500 1250 Capacitance (pF)

Capacitance Characteristics

VGS=-4.5V

CISS 1000 750 500 COSS 250 0 CRSS 0 5 10 15 20 30 25 Drain to Source Voltage,-VDS (V)

VGS=-10V

10 15 20 Drain Current,-ID (A)

25

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Reverse Drain Current,-IS (A)

Drain to Source OnResistance,RDS(ON) (m)

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TYPICAL CHARACTERISTICS(Cont.)
10 Gate to Source Voltage,-VGS (V) 8 6 4 2 0 0 4 16 12 Gate Charge,-QG (nC) 8 20 Gate-Charge Characteristics VDS=-15V ID=-6A 30 Power (W) 40

Power MOSFET
Single Pulse Power Rating Junctionto-Ambient TJ(Max)=150 TA=25

20

10

0 0.001 0.01

1 0.1 10 Pulse Width (s)

100

1000

100.0

Maximum Forward Biased Safe Operating Area TJ(Max)=150 RDS(ON) Limited TA=25 100s 1ms 10ms 0.1s 10s Normalized Transient Thermal Resistance,ZJA

Normalized Maximum Transient Thermal Impedance 10 D=TON/T TJ,PK=TA+PDM.Z JA.RJA RJA=62.5/W In descending order D=0.5,0.3,0.1,0.05,0. 02,0.01,single pulse

Drain Current,-ID (A)

10.0

1.0

1s 10s

0.1

PD TON Single Pulse T 1 10 100 1000

DC 0.1 0.1

0.01 1 10 100 Drain to Source Voltage,-VDS (V) 0.000010.00010.001 0.01 0.1 Pulse Width (s)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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