Laboratory 6: Models for MOS Devices

Introduction: The mathematical relationship between the terminal currents and voltages for a device is termed the device model. Although the basic operation of the MOS transistor is quite straight forward, the task of obtaining a mathematical model for the device that accurately predicts characteristics that can be measured in the laboratory is quite challenging. A large number of models for the MOS transistor have been developed and the research community continues to work on developing even better models. Although there is considerable ongoing activity on modeling of the MOS transistor, a simple analytical model is widely used for hand calculations and most circuit design activities use the same simple analytical model. This model is often termed the square-law model and is characterized by the equations. Procedure:

Part 3: Square-Law Parameter Extraction

To extract the process parameters {C,VT0, , } from the BSIM model for a device with dimensions W=12 and L=3 near an operating point of VGS=2V, VDS=4V, and VBS=0. I started extracting VT0 by simulate the following two circuits (with V=0V).

After running the DC analysis and only turn on the option of Save DC operation point. I found the desired output in the Result-Print-Dc operation points in the ADE window as bellow At At VGS=2V VGS=2.5 VDS=4V VDS=4V ID=265.2uA ID=479.6uA

( ( By divided 1a/2a VT0=0.5498v

) )

( (

) -----------1a )---------2a

To find I simulate the following two circuits

At At

VDS=4V VDS=2V

VGS=2V VGS=2V

ID=265.2uA ID=174.7uA

( ( By divided 1b/2b I Find =0.49036

) )

( (

) -----------1b ) ----------2b

To find at first I maser VT For VBS=-1V. I simulate the following two circuits ( W =12um and L=3um)

At At

VGS=2V VGS=2.5

VDS=2V VDS=2V

ID=174.7uA ID=364.8uA

( ( By divided 1c/2c I Find Vt=0.73963V

) )

( (

) )