1N4148 / 1N4150 / 1N4448 / 1N914B

Diodes

Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
This product is available only outside of Japan.

!External dimensions (Units : mm)

!Applications
High-speed switching

!Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.

CATHODE BAND (BLACK)

Type No.

0.50.1

A
291

!Construction
Silicon epitaxial planar

3.80.2

1.80.2

291

ROHM : GSD
EIAJ :
JEDEC : DO-35

!Absolute maximum ratings (Ta = 25C)

Type

VRM
(V)

VR
(V)

IFM
(mA)

IO
(mA)

IFSM
1s
(A)

IF
(mA)

P
(mW)

Tj
(C)

Topr
(C)

Tstg
(C)

1N4148

100

75

450

150

200

500

200

65~+200

65~+200

1N4150

50

50

600

200

250

500

200

65~+200

65~+200

1N4448
(1N914B)

100

75

450

150

200

500

200

65~+200

65~+200

!Electrical characteristics (Ta = 25C)

VF (V)
Type

0.1mA 0.25mA

BV (V) Min.

1mA

2mA

5mA

10mA

20mA

30mA

50mA

100mA 200mA 250mA

1N4148
1.0
0.66

0.54

0.76

0.82

0.87

1N4150
0.74

0.62
1N4448
(IN914B)

0.86

0.92

0.62
0.72

1.0

The upper figure is the minimum VF and the lower figure is the maximum VF value.

1.0

@
5A

@
100A

75

100

50

100

IR (A) Max.
@25C
VR (V)
0.025

20

5.0

75

0.1

50

0.025

20

5.0

75

Cr (pF)

trr (ns)
VR=6V
VR=0
IF=10mA
VR (V) f=1MHz RL=100

@150C

50.0

20

100.0

50

2.5

50.0

20

1N4148 / 1N4150 / 1N4448 / 1N914B

Diodes
!Electrical characteristic curves (Ta = 25C)

REVERSE CURRENT : IR (nA)

20
10
5
2

0.2
0

25C
Ta=75C
Ta=25C
Ta=25
C

1
0.5

100C

3000

Ta=1

FORWARD CURRENT : IF (mA)

50

1000

70C

300

50C

100
30

Ta=25C

10
3

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

20

FORWARD VOLTAGE : VF (V)

40

60

80

100 120

Fig. 2 Reverse characteristics

100

SURGE CURRENT : Isurge (A)

VR=6V
Irr=1/10IR
2

PULSE
Single pulse

50

20
10
5

2
0
0

10

20

1
0.1

30

FORWARD CURRENT : IF (mA)

10

5
50

SAMPLING
OSCILLOSCOPE

INPUT

100ns

OUTPUT

trr
0.1IR

0
IR

1000

10000

Fig. 5 Surge current characteristics

D.U.T.

PULSE GENERATOR
OUTPUT 50

100

PULSE WIDTH : Tw (ms)

Fig. 4 Reverse recovery time

characteristics

0.01F

Fig. 6 Reverse recovery time (trr) measurement circuit

3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0

10

15

20

25

30

REVERSE VOLTAGE : VR (V)

REVERSE VOLTAGE : VR (V)

Fig. 1 Forward characteristics

REVERSE RECOVERY TIME : trr (ns)

CAPACITANCE BETWEEN TERMINALS : CT (pF)

100

Fig. 3 Capacitance between

terminals characteristics

This datasheet has been download from:

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Datasheets for electronics components.