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and Contents 4-5-2. Principle 1) Hot Carrier Degradation Mechanism

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Figure 4-5-1 illustrates the major ways for hot carrier to occur. They are called channel hot electron (CHE), the avalanche hot carri (AHC), and substrate hot carrier electron (SHE), respectively.

Figure 4-5-1. Example of Hot Carrier Generation Mechanism 1) Since AHC injection (injection of both electrons and carrier holes) has the greatest influence on the Tr characteristics degradation among those three conditions above, the hot carriers are usually evaluated under the condition of AHC injection. We will discuss details of AHC injection below. 2) Model Formula of Hot Carrier

AHC injection induces ionization through collision, which generates electron-carrier hole pairs. Since carrier holes are observed in the form of substrate current, the hot carrier life and the substrate current shows a strong correlation. Generally, the relation between the hot carrier life and the substrate electric current is expressed as: 2).

Here, Isub is the substrate current, W is the width of Tr gate, and n is the constant.

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Moreover, it is also known in connection with the temperature acceleration that the lower the temperature, the more pronounced th deterioration. The reason for this is believed to be as follows: since the lower the temperature, the less probable it is that the electrons flowing through the channels will collide with the crystal lattice, the ionization through collision is accelerated as a result o the increase in the number of high-energy electrons. When the temperature acceleration is to be taken into account, the formula (4.5.1) can be expressed as follows in experiential terms.

Where Ea stands for the activation energy, k for the Boltzmann's constant, and T for the absolute temperature. To 4-5-1

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