7MBR25SA120

IGBT MODULE (S series) 1200V / 25A / PIM

IGBT Modules

Features
Low VCE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit

Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Inverter Collector current ICP -IC PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1ms Symbol VCES VGES IC Condition Rating 1200 20 35 25 70 50 25 180 1200 20 25 15 50 30 110 1200 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s C C V Nm

Continuous

Tc=25C Tc=80C Tc=25C Tc=80C

Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake

1 device

Continuous 1ms 1 device

Tc=25C Tc=80C Tc=25C Tc=80C

Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque Converter

50Hz/60Hz sine wave Tj=150C, 10ms half sine wave

AC : 1 minute

*1 Recommendable value : 2.5 to 3.5 Nm (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.

IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=25mA VGE=15V, Ic=25A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=25A VGE=15V RG=51 IF=25A chip terminal Min.

7MBR25SA120
Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.2 2.6 3000 0.35 0.25 0.1 0.45 0.08 2.3 2.4 1.2 0.6 1.0 0.3 V 3.2 0.35 1.0 0.2 2.6 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s

Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value

IF=25A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V IF=25A chip terminal VR=1600V T=25C T=100C T=25/50C

2.1 2.2 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375

Converter

mA V mA K

Thermistor

465 3305

Thermal resistance Characteristics

Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.69 1.30 1.14 0.90 0.05 Unit

Thermal resistance ( 1 device )

Rth(j-c)

C/W

Contact thermal resistance

Rth(c-f)

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

[Converter] 21(P) [B ra k e ] 2 2 (P 1 ) [In v er ter ]

[T h e rm is to r] 8 9

2 0 (G u)

1 8 (G v)

1 6 (G w )

1(R)

2(S)

3(T) 7 (B )

1 9 (E u ) 4 (U )

1 7 (E v ) 5 (V )

1 5 (E w ) 6 (W )

1 4 (G b)

1 3 (G x)

1 2 (G y)

1 1 (G z) 1 0 (E n )

23(N)

2 4 (N 1 )

IGBT Modules
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage
60

7MBR25SA120

[ Inverter ] Collector current vs. Collector-Emitter voltage

60

Tj= 25 C (typ.)

Tj= 125 C (typ.)

15V

15V 50 VGE= 20V 12V 50

VGE= 20V

12V

Collector current : Ic [ A ]

Collector current : Ic [ A ]

40

40

10V 30

30

10V

20

20

10

10 8V 8V

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

60 10

[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)

o

50

Tj= 25 C

Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

40

30

4 Ic= 50A 2 Ic= 25A Ic= 12.5A

20

10

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]

[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)

10000

[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25 C

1000 25
o

VGE=0V, f= 1MHz, Tj= 25 C

800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies

20 Gate - Emitter voltage : VGE [ V ]

600

15

1000

400

10

Coes Cres 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]

200

0 0 50 100 150 200 Gate charge : Qg [ nC ]

0 250

IGBT Modules

7MBR25SA120

1000

[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=25C

1000

[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51, Tj=125C

toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500

Switching time : ton, tr, toff, tf [ nsec ]

ton

ton tr

tr

tf 100

100 tf

50 0 10 20 Collector current : Ic [ A ] 30 40

50 0 10 20 Collector current : Ic [ A ] 30 40

[ Inverter ] Switching time vs. Gate resistance (typ.)

5000

Vcc=600V, Ic=25A, VGE=15V, Tj=25C

[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=51

6 Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Eon(125 C)

Switching time : ton, tr, toff, tf [ nsec ]

1000

Eon(25 C)

500

toff

Eoff(125 C)

ton tr 100 tf 50 10 50 100

]

Eoff(25 C) Err(125 C)
o

1 Err(25 C) 0 500 0 10 20 30 40 50 Gate resistance : Rg [ Collector current : Ic [ A ]

o

[ Inverter ] Switching loss vs. Gate resistance (typ.)

[ Inverter ] Reverse bias safe operating area

60

Vcc=600V, Ic=25A, VGE=15V, Tj=125C

20

+VGE=15V, -VGE<15V, Rg>51 = = = , Tj<125C

50 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 15 Eon Collector current : Ic [ A ] Eoff 10 Err 0 10 50 100
]

40

10

30

20

0 500 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg [ Collector - Emitter voltage : VCE [ V ]

IGBT Modules

7MBR25SA120

[ Inverter ] Forward current vs. Forward on voltage (typ.)

60 300

[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=51

Tj=125 C 50

Tj=25 C trr(125 C)
o

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]

Forward current : IF [ A ]

40

100 trr(25 C)
o

30

20

10

Irr(125 C)

Irr(25 C) 0 0 1 2 Forward on voltage : VF [ V ] 3 4 10 0 10 20 Forward current : IF [ A ] 30 40

[ Converter ] Forward current vs. Forward on voltage (typ.)

60

50

Tj= 25 C

Tj= 125 C

Forward current : IF [ A ]

40

30

20

10

0 0.0

0.4

0.8

1.2

1.6

2.0

Forward on voltage : VFM [ V ]

Transient thermal resistance

5 200 100 FWD[Inverter] Thermal resistanse : Rth(j-c) [ C/W ] 1 IGBT[Brake] Conv. Diode Resistance : R [ k ] IGBT[Inverter] 10

[ Thermistor ] Temperature characteristic (typ.)

0.1

0.01 0.001

0.01

0.1

0.1 -60

-40

-20

20

40

60

80
o

100

120

140

160

180

Pulse width : Pw [ sec ]

Temperature [

C]

IGBT Modules

7MBR25SA120

[ Brake ] Collector current vs. Collector-Emitter voltage

35

[ Brake ] Collector current vs. Collector-Emitter voltage

35

Tj= 25 C (typ.)
15V VGE= 20V 12V

Tj= 125 C (typ.)

30

30

VGE= 20V

15V

12V

25 Collector current : Ic [ A ] Collector current : Ic [ A ]

25

20 10V 15

20

10V

15

10

10

5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)

35
o o

[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage

10

Tj= 25 C (typ.)

Tj= 25 C 30

Tj= 125 C 8

25 Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

20

15

4 Ic= 30A 2 Ic= 15A Ic= 7.5A

10

0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]

0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]

[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25

5000
o

[ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25

1000
o

C
25

800 Capacitance : Cies, Coes, Cres [ pF ] Cies 1000 Collector - Emitter voltage : VCE [ V ]

20 Gate - Emitter voltage : VGE [ V ]

600

15

400

10

Coes 100 Cres

200

50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]

0 0 50 100 Gate charge : Qg [ nC ]

0 150

IGBT Modules
Outline Drawings, mm

7MBR25SA120