TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,

TIP32C, (PNP)
Complementary Silicon
Plastic Power Transistors
http://onsemi.com

Designed for use in general purpose amplifier and switching

applications.

Collector-Emitter Saturation Voltage -

3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40-60-80-100 VOLTS
40 WATTS

VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32

= 60 Vdc (Min) - TIP31A, TIP32A
= 80 Vdc (Min) - TIP31B, TIP32B
= 100 Vdc (Min) - TIP31C, TIP32C

High Current Gain - Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

MARKING
DIAGRAM

Compact TO-220 AB Package

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector-Emitter Voltage TIP31, TIP32

TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

VCEO

40
60
80
100

Vdc

VCB

40
60
80
100

Vdc

VEB

5.0

Vdc

IC

3.0
5.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation

@ TC = 25
C
Derate above 25
C

PD

40
0.32

Watts
W/
C

Total Power Dissipation

@ TA = 25
C
Derate above 25
C

PD

2.0
0.016

Watts
W/
C

Unclamped Inductive
Load Energy (Note 1)

32

mJ

TJ, Tstg

65 to
+ 150

C

Collector-Base Voltage

TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

Emitter-Base Voltage
Collector Current

Continuous
Peak

Operating and Storage Junction

Temperature Range

AYWW
TIPxxx

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

TO-220AB
CASE 221A-09
STYLE 1
xxx
A
Y
WW

= Specific Device Code:

31, 31A, 31B, 31C, 32, 32A, 32B, 32C
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 ..

Semiconductor Components Industries, LLC, 2003

January, 2003 - Rev. 8

Publication Order Number:

TIP31A/D

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

62.5

C/W

Thermal Resistance, Junction to Case

RJC

3.125

C/W

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

VCEO(sus)

40
60
80
100

Vdc

ICEO

0.3

mAdc

0.3

200
200
200
200

IEBO

1.0

mAdc

hFE

25
10

50

VCE(sat)

1.2

Vdc

VBE(on)

1.8

Vdc

fT

3.0

MHz

hfe

20

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

TIP31, TIP32, TIP31A, TIP32A

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

TIP31B, TIP31C, TIP32B, TIP32C

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)
(VCE = 60 Vdc, VEB = 0)
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)

Adc

ICES

TIP31, TIP32
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.

http://onsemi.com
2

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

PD, POWER DISSIPATION (WATTS)

TC TA
40 4.0

TC

30 3.0

20 2.0

TA

10 1.0

20

40

120
60
100
80
T, TEMPERATURE (C)

140

160

Figure 1. Power Derating

TURN-ON PULSE
APPROX
+11 V

2.0

RC

IC/IB = 10
TJ = 25C

1.0
SCOPE

Vin

Vin 0

RB
t, TIME (
s)

VEB(off)

VCC

t1
t3

APPROX
+11 V

Cjd << Ceb

t1 7.0 ns
100 < t2 < 500 s
t3 < 15 ns

Vin
t2
TURN-OFF PULSE

- 4.0 V

0.7
0.5

tr @ VCC = 30 V

0.3

tr @ VCC = 10 V

0.1
0.07
0.05
0.03
0.02
0.03

DUTY CYCLE 2.0%

APPROX - 9.0 V

td @ VEB(off) = 2.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

0.3 0.5
0.1
1.0
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Equivalent Circuit

Figure 3. Turn-On Time

http://onsemi.com
3

0.05

3.0

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

1.0
0.7
0.5

D = 0.5

0.3
0.2

0.2
0.1

0.1
0.07
0.05

ZJC(t) = r(t) RJC

RJC(t) = 3.125C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZJC(t)

0.05
0.02

0.03
0.02

0.01

0.01
0.01

SINGLE PULSE

0.02

0.05

1.0

0.2

0.5

1.0

2.0
5.0
t, TIME (ms)

10

20

50

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

100

200

500

1.0 k

Figure 4. Thermal Response

10
IC, COLLECTOR CURRENT (AMP)

5.0

100s
5.0ms

2.0
1.0
0.5
0.2
0.1
5.0

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)

150
C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

SECONDARY BREAKDOWN
LIMITED @ TJ 150C
THERMAL LIMIT @ TC = 25C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C

1.0ms

10
20
50
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

t, TIME (s)

1.0
0.7
0.5
0.3
0.2

ts
tf @ VCC = 30 V

300

IB1 = IB2
IC/IB = 10
ts = ts 1/8 tf
TJ = 25C

TJ = +
25C
200
CAPACITANCE (pF)

3.0
2.0

tf @ VCC = 10 V

0.1
0.07
0.05
0.03
0.03

100

Ceb

70
50

0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)

2.0

30
0.1

3.0

Figure 6. Turn-Off Time

Ccb

0.2 0.3 0.5

1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

http://onsemi.com
4

20 30 40

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

hFE, DC CURRENT GAIN

300

100
70
50

TJ = 150C

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

500
VCE = 2.0 V

25C

55 C

30

10
7.0
5.0
0.03 0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)

3.0

2.0
TJ = 25C
1.6
IC = 0.3 A

1.2

0.4
0
1.0

V, TEMPERATURE COEFFICIENTS (mV/C)

1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V

0.4
0.2

VCE(sat) @ IC/IB = 10

0
0.003 0.005 0.01 0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0

IC, COLLECTOR CURRENT (A)

101
100
101
102

10
20
50
100 200
IB, BASE CURRENT (mA)

500 1000

+
2.5
+
2.0

*APPLIES FOR IC/IB hFE/2

TJ =
65C TO +
150C

+
1.5
+
1.0
+
0.5

*VC FOR VCE(sat)

0

0.5

1.0

1.5

VB FOR VBE

2.0

2.5
0.003 0.005 0.01 0.02

0.05

0.1

0.2 0.3 0.5

1.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

Figure 11. Temperature Coefficients

103
102

5.0

IC, COLLECTOR CURRENT (AMPS)

VCE = 30 V
TJ = 150C

100C
REVERSE

FORWARD

25C

103

0.4
0.3
0.2
0.1

ICES
0

+
0.1 +
0.2

+
0.3 +
0.4 +
0.5

+
0.6

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

V, VOLTAGE (VOLTS)

TJ = 25C

0.6

2.0

Figure 9. Collector Saturation Region

1.4

0.8

3.0 A

0.8

Figure 8. DC Current Gain

1.2

1.0 A

2.0 3.0

107
VCE = 30 V

IC = 10 x ICES

106
IC ICES

105
104

IC = 2 x ICES

103

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

102
20

40

60

80

100

120

140

160

VBE, BASE-EMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector Cut-Off Region

Figure 13. Effects of Base-Emitter Resistance

http://onsemi.com
5

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
ORDERING INFORMATION
Device

Package

Shipping

TIP31

TO-220AB

50 Units/Rail

TIP31A

TO-220AB

50 Units/Rail

TIP31B

TO-220AB

50 Units/Rail

TIP31C

TO-220AB

50 Units/Rail

TIP32

TO-220AB

50 Units/Rail

TIP32A

TO-220AB

50 Units/Rail

TIP32B

TO-220AB

50 Units/Rail

TIP32C

TO-220AB

50 Units/Rail

PACKAGE DIMENSIONS
TO-220AB
CASE 221A-09
ISSUE AA

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

SEATING
PLANE

-TC

F
T

Q
1 2 3

H
K
Z
L

STYLE 1:
PIN 1.
2.
3.
4.

D
N

BASE
COLLECTOR
EMITTER
COLLECTOR

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.

N. American Technical Support: 800-282-9855 Toll Free USA/Canada

http://onsemi.com
6

TIP31A/D

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.