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SOP- 08
LIMITS -30 25 -13 -9 -50 -49 120 2.5 1.6 -55 to 150
UNITS V
TA = 25 C TA = 70 C
ID IDM IAS
L = 0.1mH TA = 25 C TA = 70 C
mJ W C
TYPICAL
MAXIMUM 25 50
UNITS C / W
Ver 1.0
2011/4/20
P1003EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 1
LIMITS MIN -30 -1.0 -1.5 -3 100 -1 -10 -50 13 10.5 9 29 4200 16 12 10.5 TYP MAX
UNIT
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD
VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = 25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V , TJ = 125 C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -10A VGS = -6.5V, ID = -13A VGS = -10V, ID = -13A VDS = -10V, ID = -13A DYNAMIC VGS = 0V, VDS = -15V, f = 1MHz
V nA A A m S
pF
Gate-Source Charge2 Gate-Drain Charge Rise Time Fall Time2 Continuous Current Forward Voltage
1 2 1 2 2 2
nC
nS
Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature.
Ver 1.0
2011/4/20
P1003EVG
P-Channel Enhancement Mode MOSFET
Ver 1.0
2011/4/20
P1003EVG
P-Channel Enhancement Mode MOSFET
Ver 1.0
2011/4/20