ON Semiconductor

NPN

TIP120 *
TIP121*

Plastic Medium-Power
Complementary Silicon Transistors

TIP122 *
PNP
TIP125 *

. . . designed for generalpurpose amplifier and lowspeed

switching applications.

High DC Current Gain

hFE = 2500 (Typ) @ IC

= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
= 80 Vdc (Min) TIP121, TIP126
= 100 Vdc (Min) TIP122, TIP127
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package

TIP126 *
TIP127 *
*ON Semiconductor Preferred Device

DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS
65 WATTS

*MAXIMUM RATINGS
Rating

CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage

Collector Current Continuous

Peak
Base Current

Total Power Dissipation @ TC = 25
C

Derate above 25
C
Total Power Dissipation @ TA = 25
C
Derate above 25
C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction,
Temperature Range

Symbol
VCEO
VCB

TIP120,
TIP125

TIP121,
TIP126

TIP122,
TIP127

Unit

60

80

100

Vdc

60

80

100

Vdc

VEB
IC

5.0

Vdc

5.0
8.0

Adc

120

mAdc

65
0.52

Watts
W/
C

2.0
0.016

Watts
W/
C

50

mJ

TJ, Tstg

65 to +
150

C

IB
PD
PD

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

3
CASE 221A09
TO220AB

THERMAL CHARACTERISTICS
Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

RJC

1.92

C/W

62.5

C/W

Thermal Resistance, Junction to Ambient

RJA
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 .

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 5

Publication Order Number:

TIP120/D

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

PD, POWER DISSIPATION (WATTS)

TA TC
4.0 80

3.0 60
TC
2.0 40

TA

1.0 20

20

40

60
80
100
T, TEMPERATURE (C)

120

Figure 1. Power Derating

http://onsemi.com
2

140

160

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

Characteristic

Symbol

Min

Max

60
80
100

0.5
0.5
0.5

0.2
0.2
0.2

2.0

1000
1000

2.0
4.0

Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

VCEO(sus)

TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)

TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)

TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

Vdc

ICEO

mAdc

ICBO

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

mAdc

IEBO

mAdc

ON CHARACTERISTICS (1)

DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)

VCE(sat)

Vdc

BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)

VBE(on)

2.5

Vdc

hfe

4.0

300
200

DYNAMIC CHARACTERISTICS

SmallSignal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz

Cob

pF

TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

(1) Pulse Test: Pulse Width
300 s, Duty Cycle
2%.

5.0

CC
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
-
30 V
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
RC
SCOPE
MSD6100 USED BELOW IB 100 mA
TUT
RB
51

0
V1
approx
-12 V

D1

8.0 k 120

+
4.0 V
25 s

tr, tf 10 ns
DUTY CYCLE = 1.0%

PNP
NPN

ts

2.0

t, TIME (s)

V2
approx
+
8.0 V

3.0

0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1

for td and tr, D1 is disconnected

and V2 = 0
For NPN test circuit reverse all polarities.

tf

1.0

Figure 2. Switching Times Test Circuit

VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25C
0.2

tr

td @ VBE(off) = 0
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

http://onsemi.com
3

5.0 7.0 10

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2

0.1

0.1

0.07
0.05

0.05
0.02

0.03

0.02

P(pk)
ZJC(t) = r(t) RJC
RJC = 1.92C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZJC(t)
DUTY CYCLE, D = t1/t2

0.01

0.01
0.01

SINGLE PULSE
0.02

0.05

0.1

0.2

0.5

1.0

2.0
5.0
t, TIME (ms)

10

20

50

100

200

500 1.0 k

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMP)

20

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150
C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown

100 s

10
500 s

5.0

dc
TJ = 150C
BONDING WIRE LIMITED
THERMALLY LIMITED
1ms
@ TC = 25C (SINGLE PULSE)
5ms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127

2.0
1.0
0.5
0.2
0.1

0.05
0.02
1.0

2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

70 100

Figure 5. ActiveRegion Safe Operating Area

300
TJ = 25C

5000
3000
2000

200
C, CAPACITANCE (pF)

h fe , SMALL-SIGNAL CURRENT GAIN

10,000

1000
500
300
200

TC = 25C
VCE = 4.0 Vdc
IC = 3.0 Adc

100
50
30
20
10
1.0

5.0

70

Cib

50

PNP
NPN
2.0

Cob

100

10
20
50 100
f, FREQUENCY (kHz)

200

30
0.1

500 1000

Figure 6. SmallSignal Current Gain

PNP
NPN
0.2

0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

http://onsemi.com
4

50

100

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

NPN
TIP120, TIP121, TIP122

PNP
TIP125, TIP126, TIP127

20,000

20,000
VCE = 4.0 V

5000

10,000
7000
5000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

10,000
TJ = 150C

3000
2000

25C

1000

-
55C

500
300
200
0.1

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

3000

VCE = 4.0 V

TJ = 150C
25C

2000
1000
700
500

-
55C

300
200
0.1

5.0 7.0 10

0.2

0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)

5.0 7.0 10

3.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain

TJ = 25C
2.6

IC = 2.0 A

4.0 A

6.0 A

2.2
1.8
1.4
1.0
0.3

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

20

30

3.0
TJ = 25C
IC = 2.0 A

2.6

4.0 A

6.0 A

2.2
1.8
1.4
1.0
0.3

0.5 0.7 1.0

2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)

20

30

Figure 9. Collector Saturation Region

3.0

3.0
TJ = 25C

TJ = 25C
2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.5
2.0
1.5
1.0
0.5
0.1

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
0.2 0.3

0.5 0.7

1.0

2.0 3.0

5.0 7.0

2.0
1.5

VBE @ VCE = 4.0 V

1.0

VBE(sat) @ IC/IB = 250

0.5
0.1

10

IC, COLLECTOR CURRENT (AMP)

VCE(sat) @ IC/IB = 250

0.2 0.3

0.5 0.7

1.0

2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages

http://onsemi.com
5

5.0 7.0 10

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA

T
B

SEATING
PLANE

F
T

Q
1 2 3

H
K
Z
L

G
D
N

STYLE 1:
PIN 1.
2.
3.
4.

BASE
COLLECTOR
EMITTER
COLLECTOR

http://onsemi.com
6

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

Notes

http://onsemi.com
7

TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.

N. American Technical Support: 8002829855 Toll Free USA/Canada

http://onsemi.com
8

TIP120/D

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.