Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION

2SA1141

Absolute maximum ratings(Ta=25)

SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -115 -115 -5 -10 -15 100 W UNIT V V V A A

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

2SA1141

MAX

UNIT

VCEsat

Collector-emitter saturation voltage

IC=-4.5A ;IB=-0.45A

-0.7

-1.5

VBE ICBO

Base-emitter on voltage

IC=-4.5A ; VCE=-2V VCB=-80V; IE=0

-1.2

-2.0

V A A

Collector cut-off current

-50

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-50

hFE -1

DC current gain

IC=-1A ; VCE=-2V

60

200

hFE -2

DC current gain

IC=-4.5A ; VCE=-2V

40

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

390

pF

fT

Transition frequency

IC=-1A ; VCE=-2V

90

MHz

hFE-1 classifications R 60-120 Q 100-200

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

PACKAGE OUTLINE

2SA1141

Fig.2 Outline dimensions (unindicated tolerance:0.30mm)