********************************************************************************

************
*
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#################################################
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*
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MTB20N20E BY MOTOROLA
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MODEL DEVELOPED BY
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*
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ALLIANCE TECHNOLOGIES
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*
*
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10510 RESEARCH RD SE
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*
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ALBUQUERQUE NM 87123
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*
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(505) 299-9591
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*
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11-25-92 J. DULIERE
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*
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*
#################################################
*
*
*
********************************************************************************
************
*
* THE MODEL FOR THIS DEVICE IS A SUBCIRCUIT AND CAN BE USED IN THE FOLLOWING FOR
MAT
* IN ANY CIRCUIT SIMULATION:
* X<name> Nodes<N1, N2, N3> Model_Name
* where X<name> is the circuit specific name
* Nodes are 3 for this device, the first is the drain, the second is the gate, a
nd the third
* is the source.
* Model_Name is MTB20N20X WHERE 'X' IS EITHER C, P, OR G FOR SPICE 3C.1 - 3E.
2, PSPICE,
* AND SPICE 2G.6 RESPECTIVELY
* Example: X1 10 20 30 MTB20N20C IS USED WITH SPICE 3C.1 COMPATIBALE SIMULATORS
*
.SUBCKT MTB20N20C
10 20 30
*
| | |
*
| | SOURCE
*
| GATE
*
DRAIN
********************************************************************************
************
*
*
*------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
RD1
2
4
54.25E-03 RD
RD2
4
5
54.25E-03 RD

RS
3
9
45.20E-03 RS
RG
1
8
7.25
LD
5
10
3.5E-9
LG
8
20
7.5E-9
LS
9
30
7.5E-9
********************************************************************************
************
*---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
********************************************************************************
************
********************************************************************************
************
*
*
*--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
DDS
9
11
DDS1
RDIO
11
5
9.1E-03 RDIO
*-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
*
*
********************************************************************************
************
********************************************************************************
************
*
*
*---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
*-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
********************************************************************************
************
*
VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
*
*
THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
LLED
*
*
SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
*
********************************************************************************
************
*
DGD
6
4
DGD
RDGD
4
6
1E10
M2
6
4
1
100
MSW1
RSUB1 1
100
1E12
*----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
CGDMAX 4
7
1.82E-9
RCGD
4
7
1E10
M3
7
4
1
101
MSW2
RSUB2 1
101
1E12
*---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
*
*
********************************************************************************

************
********************************************************************************
************
*
*
*--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
M1
2
1
3
9
MAIN
W=5.36 L=1E-6
*------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
*
*
********************************************************************************
************
*------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
.MODEL MSW1
NMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MSW2
PMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MAIN
NMOS
(LEVEL = 3
TOX
= 1E-7
+ NSUB = 1.85E15
VTO
= 4.472
PHI
= 0.6
+ UO
= 690.9843806
KAPPA = 7.131283E-4
THETA = 6.680866E-3
+ NFS
= 2.5E12
)
.MODEL DDS1 D
(
IS
= 3.908008E-12
+ N
= 1.012433
BV
= 200
IBV
= 2.5E-4
+ EG
= 1.11
XTI
= 3.497
TT
= 753E-9
+ CJO
+ FC
.MODEL
+ VJ
.MODEL
.MODEL
.MODEL

= 1.662516E-9
= 0.5
)
DGD
D
= 0.217
)
RD
R
)
RS
R
)
RDIO R
)

VJ

= 0.7407019

= 0.4736603

= 0.692

CJO
FC

= 1.70e-9
= 0.5

( TC1

= 7.6984E-4

TC2

= 5.43994E-6

( TC1

= 9.64295E-3

TC2

= 2.3704E-5

( TC1

= 2.06379E-3

TC2

= 6.53716E-7

.ENDS
********************************************************************************
************
********************************************************************************
************
.SUBCKT MTB20N20P
10 20 30
*
| | |
*
| | SOURCE
*
| GATE
*
DRAIN
********************************************************************************
************
*
*
*------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
RD1
2
4
RD
54.25E-03
RD2
4
5
RD
54.25E-03
RS
3
9
RS
45.20E-03

RG
1
8
7.25
LD
5
10
3.5E-9
LG
8
20
7.5E-9
LS
9
30
7.5E-9
********************************************************************************
************
*---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
********************************************************************************
************
********************************************************************************
************
*
*
*--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
DDS
9
11
DDS1
RDIO
11
5
RDIO
9.1E-03
*-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
*
*
********************************************************************************
************
********************************************************************************
************
*
*
*---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
*-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
********************************************************************************
************
*
VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
*
*
THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
LLED
*
*
SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
*
********************************************************************************
************
*
DGD
6
4
DGD
RDGD
4
6
1E10
M2
6
4
1
100
MSW1
RSUB1 1
100
1E12
*----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
CGDMAX 4
7
1.82E-9
RCGD
4
7
1E10
M3
7
4
1
101
MSW2
RSUB2 1
101
1E12
*---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
*
*
********************************************************************************
************

********************************************************************************
************
*
*
*--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
M1
2
1
3
9
MAIN
W=5.36 L=1E-6
*------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
*
*
********************************************************************************
************
*------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
.MODEL MSW1
NMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MSW2
PMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MAIN
NMOS
(LEVEL = 3
TOX
= 1E-7
+ NSUB = 1.85E15
VTO
= 4.472
PHI
= 0.6
+ UO
= 690.9843806
KAPPA = 7.131283E-4
THETA = 6.680866E-3
+ NFS
= 2.5E12
)
.MODEL DDS1 D
(
IS
= 3.908008E-12
+ N
= 1.012433
BV
= 200
IBV
= 2.5E-4
+ EG
= 1.11
XTI
= 3.497
TT
= 753E-9
+ CJO
+ FC
.MODEL
+ VJ
.MODEL
.MODEL
.MODEL

= 1.662516E-9
= 0.5
)
DGD
D
= 0.217
)
RD
RES
)
RS
RES
)
RDIO RES
)

VJ

= 0.7407019

= 0.4736603

= 0.692

CJO
FC

= 1.70e-9
= 0.5

( TC1

= 7.6984E-4

TC2

= 5.43994E-6

( TC1

= 9.64295E-3

TC2

= 2.3704E-5

( TC1

= 2.06379E-3

TC2

= 6.53716E-7

.ENDS
********************************************************************************
************
********************************************************************************
************
.SUBCKT MTB20N20G
10 20 30
*
| | |
*
| | SOURCE
*
| GATE
*
DRAIN
********************************************************************************
************
*
*
*------------------------------ EXTERNAL PARASITICS OF DEVICE ----------------------------*
RD1
2
4
54.25E-03 TC=7.6984E-4,5.43994E-6
RD2
4
5
54.25E-03 TC=7.6984E-4,5.43994E-6
RS
3
9
45.20E-03 TC=9.64295E-3,2.3704E-5
RG
1
8
7.25

LD
5
10
3.5E-9
LG
8
20
7.5E-9
LS
9
30
7.5E-9
********************************************************************************
************
*---------------------------- END EXTERNAL PARASITICS OF DEVICE --------------------------*
********************************************************************************
************
********************************************************************************
************
*
*
*--------------------- DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT --------------------*
DDS
9
11
DDS1
RDIO
11
5
9.1E-03
TC=2.06379E-3,6.53716E-7
*-------------------- END DRAIN SOURCE CAPACITANCE AND BREAKDOWN CIRCUIT -----------------*
*
*
********************************************************************************
************
********************************************************************************
************
*
*
*---------------------------- DRAIN GATE CAPACITANCE SIMULATOR ---------------------------*
*-------------------- FIRST SECTION FOR NON-LINEAR CGD INCLUDES FOLLOWING ----------------*
********************************************************************************
************
*
VOLTAGE CONTROLLED SWITCHES CAN BE USED IN PLACE OF M2 AND M3 IN THE EVENT
*
*
THE SIMULATOR SUPPORTS VOLTAGE CONTROLLED SWITCHES. USE OF VOLTAGE CONTRO
LLED
*
*
SWITCHES WILL REDUCE EXECUTION TIME FOR THIS MODEL
*
********************************************************************************
************
*
DGD
6
4
DGD
RDGD
4
6
1E10
M2
6
4
1
100
MSW1
RSUB1 1
100
1E12
*----------------------------- LAST SECTION FOR CONSTANT CGD ----------------------------*
CGDMAX 4
7
1.82E-9
RCGD
4
7
1E10
M3
7
4
1
101
MSW2
RSUB2 1
101
1E12
*---------------------------- END GATE CAPACITANCE SIMULATOR -----------------------------*
*
*
********************************************************************************
************
********************************************************************************

************
*
*
*--------------------------- LEVEL 3 MOS MODEL CORE OF SUBCKT ----------------------------*
M1
2
1
3
9
MAIN
W=5.36 L=1E-6
*------------------------------ END LEVEL THREE MOS MODEL --------------------------------*
*
*
********************************************************************************
************
*------------------------------ PARAMETER SETS FOR MODELS --------------------------------*
.MODEL MSW1
NMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MSW2
PMOS
(LEVEL = 1
VTO = 0
KP
= 1
)
.MODEL MAIN
NMOS
(LEVEL = 3
TOX
= 1E-7
+ NSUB = 1.85E15
VTO
= 4.472
PHI
= 0.6
+ UO
= 690.9843806
KAPPA = 7.131283E-4
THETA = 6.680866E-3
+ NFS
= 2.5E12
)
.MODEL DDS1 D
(
IS
= 3.908008E-12
+ N
= 1.012433
BV
= 200
IBV
= 2.5E-4
+ EG
= 1.11
XTI
= 3.497
TT
= 753E-9
+ CJO
+ FC
.MODEL
+ VJ
.ENDS
_

= 1.662516E-9
= 0.5
)
DGD
D
= 0.217
)

VJ

= 0.7407019

= 0.4736603

= 0.692

CJO
FC

= 1.70e-9
= 0.5