Si4800BDY

New Product

Vishay Siliconix

N-Channel Reduced Qg, Fast Switching MOSFET

PRODUCT SUMMARY
VDS (V)
30

rDS(on) (W)
0.0185 @ VGS = 10 V 0.030 @ VGS = 4.5 V

ID (A)
9 7

SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Symbol
VDS VGS

10 secs
30 "20 9

Steady State

Unit
V

6.5 5.0 40 A

ID IDM IS PD TJ, Tstg

7.0

2.3 2.5 1.6 - 55 to 150 1.3 0.8 W _C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Limits Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 72124 S-31062Rev. B, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJF

Symbol

Typ
40 70 24

Max
50 95 30

Unit
_C/W

Si4800BDY
Vishay Siliconix
New Product

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 9 A IS = 2.3 A, VGS = 0 V 30 0.0155 0.023 16 0.75 1.2 0.0185 0.030 S V 0.8 1.8 "100 1 5 V nA mA A W

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 5.0 V, ID = 9 A 8.7 1.5 3.5 1.2 7 12 32 14 30 2.0 15 20 50 25 60 ns W 13 nC

Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 72124 S-31062Rev. B, 26-May-03

Si4800BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 35 30 I D - Drain Current (A) 25 20 3V 15 10 5 0 0 1 2 3 4 5 I D - Drain Current (A) 4V 40 TC = - 55_C 35 30 25 20 15 10 5 0 0.0 25_C

Vishay Siliconix

Transfer Characteristics

125_C

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040 r DS(on) - On-Resistance ( W ) 1200

Capacitance

C - Capacitance (pF)

0.032 VGS = 4.5 V 0.024 VGS = 10 V 0.016

1000 Ciss

800

600

400 Coss

0.008

200 Crss

0.000 0 5 10 15 20 25 30

0 0 4 8 12 16 20

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

Gate Charge
6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 1.8

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 9 A

r DS(on) - On-Resistance (W ) (Normalized)

1.6

1.4

1.2

1.0

0.8

0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Document Number: 72124 S-31062Rev. B, 26-May-03

0.6 - 50

- 25

25

50

75

100

125

150

TJ - Junction Temperature (_C) www.vishay.com

Si4800BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.06

On-Resistance vs. Gate-to-Source Voltage

TJ = 150_C 10

r DS(on) - On-Resistance ( W )

0.05

I S - Source Current (A)

0.04 ID = 9 A 0.03

0.02

0.01 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage
0.4 150

Single Pulse Power, Junction-to-Ambient

0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W)

120

90

- 0.2

60

- 0.4 30

- 0.6

- 0.8 - 50

- 25

25

50

75

100

125

150

0 10 -3

10 -2

10 -1 Time (sec)

10

TJ - Temperature (_C)

Safe Operating Area, Junction-to-Foot

100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms

10 ms 100 ms 1s 10 s dc

0.1

TC = 25_C Single Pulse

0.01 0.1 1 10 100

VDS - Drain-to-Source Voltage (V) Document Number: 72124 S-31062Rev. B, 26-May-03

www.vishay.com

Si4800BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

Vishay Siliconix

0.2
Notes:

0.1 0.1 0.05

t1 PDM

0.02

t2 1. Duty Cycle, D =

2. Per Unit Base = RthJA = 70_C/W

t1 t2

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)

3. TJM - TA = PDMZthJA(t) 4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Foot

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10

Document Number: 72124 S-31062Rev. B, 26-May-03

www.vishay.com

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.