OC Chapter III 110318

Escola Tcnica Superior dEnginyeria telecom Escola Tcnica Superior dEnginyeria
de Telecomunicaci de Barcelona
Departament de Teoria del Senyal
telecom
BCN
UNIVERSITAT POLITCNICA DE
CATALUNYA
Departament de Teoria del Senyal
i Comunicacions
FIBER-OPTIC
COMMUNICATIONS COMMUNICATIONS
JOAN M. GEN BERNAUS
OPTICAL COMMUNICATIONS GROUP OPTICAL COMMUNICATIONS GROUP
G C O
FIBER FIBER- -OPTIC COMMUNICATIONS OPTIC COMMUNICATIONS
GCO
CONTENTS CONTENTS
1 INTRODUCTION 1. INTRODUCTION
2. OPTICAL FIBER
3. OPTICAL SOURCES
4. OPTICAL RECEIVERS
5 OPTICALAMPLIFIERS 5. OPTICAL AMPLIFIERS
6. FIBER-OPTIC SYSTEMS
21MARCH 2011
slide2 CONTENTS CONTENTS
6. FIBER OPTIC SYSTEMS
GCO
3.OPTICALSOURCES 3.OPTICALSOURCES
INTRODUCTIONTOOPTICALSOURCES
CHARACTERISTICS,TYPES,ANDAPPLICATIONS
LIGHT MATTERINTERACTION
PHYSICALPRINCIPLESOFSEMICONDUCTORS
QUANTUMEFFICIENCY
LEDDIODE
WORKINGPRINCIPLE
LIGTH CURRENTCHARACTERISTIC
POWER SPECTRALEFFICIENCY
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LEDSLOSSES
GCO
LED DYNAMICS LEDDYNAMICS
LEDSRATEEQUATION
LEDSDIRECTMODULATION
LASERDIODE
WORKING PRINCIPLE WORKINGPRINCIPLE
MATERIALGAIN
OSCILLATIONCONDITION
LIGHT CURRENTCHARACTERISTIC
LASERTYPES
LASERDYNAMICS
LASERSRATEEQUATIONS
THRESHOLD CURRENT THRESHOLD CURRENT
LASERSDIRECT MODULATION
MODERN LASER STRUCTURES
21MARCH 2011
MODERNLASERSTRUCTURES
GCO
INTRODUCCTION TO OPTICAL SOURCES INTRODUCCTION TO OPTICAL SOURCES INTRODUCCTIONTOOPTICALSOURCES INTRODUCCTIONTOOPTICALSOURCES
OPTICAL
SOURCE SOURCE
ELECTRICAL
SIGNAL
OPTICAL
SIGNAL
I P I P
QUADRATIC CONVERSION QUADRATICCONVERSION
P I
21MARCH 2011
slide5 3. OPTICAL SOURCES 3. OPTICAL SOURCES -- INTRODUCTION INTRODUCTION
GCO
Continuous Wave (CW) Continuous Wave (CW) ContinuousWave(CW) ContinuousWave(CW)
E E
OUT OUT
V
cc
t t
cc
f ~ 10
14
Hz
IntensityModulation(IM) IntensityModulation(IM)
f
o
10 Hz
E E
OUT OUT
E E
OUT OUT
I ( t )
V
cc I(t)
t t
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GCO
DESIRABLE CHARACTERISTICS DESIRABLE CHARACTERISTICS DESIRABLECHARACTERISTICS DESIRABLECHARACTERISTICS
HIGH E/O CONVERSION EFFICIENCY HIGH E/O CONVERSION EFFICIENCY HIGHE/OCONVERSIONEFFICIENCY HIGHE/OCONVERSIONEFFICIENCY
WORKINGTEMPERATUREANDSTABILITY WORKINGTEMPERATUREANDSTABILITY
EMISSIONFREQUENCY EMISSIONFREQUENCY
HIGHMODULATIONSPEED HIGHMODULATIONSPEED
LINEARLIGHT LINEARLIGHTCURRENTRESPONSE CURRENTRESPONSE
HIGHSPECTRALPURITY(LASER) HIGHSPECTRALPURITY(LASER) ( ) ( )
FIBERCOMPATIBILITY(COUPLING) FIBERCOMPATIBILITY(COUPLING)
SMALL SIZE AND CONSUMPTION (INTEGRATION) SMALL SIZE AND CONSUMPTION (INTEGRATION) SMALLSIZEANDCONSUMPTION(INTEGRATION) SMALLSIZEANDCONSUMPTION(INTEGRATION)
REDUCEDCOST REDUCEDCOST
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GCO
TYPES AND APPLICATIONS TYPES AND APPLICATIONS TYPESANDAPPLICATIONS TYPESANDAPPLICATIONS
LEDDIODE LEDDIODE
Visiblevisualization
nearIRtelecom
LASERDIODE LASERDIODE
Vi ibl Visible
industry
medicine medicine
spacetelecom
IR l
21MARCH 2011
nearIRtelecom
GCO
LIGHT LIGHTMATTERINTERACTION MATTERINTERACTION GG C O C O
Atomic/MolecularEnergyLevel Atomic/MolecularEnergyLevel
The energy level of an isolated atom / molecule is discrete due
to Pauli Exclusion Principle.
E
m
BoltzmannStatistics
E
E
4
L
e
v
e
l
s
( )
m m B
P(E ) exp E K T =
E
2
E
3
n
e
r
g
y
L
K
B
:C.Boltzmann(1.3810
23
J/K)
E
1
P(E )
E
21MARCH 2011
P(E
m
)
GCO
Light Absorption / Emission Processes Light Absorption / Emission Processes
Any given material shows a particular light absorption
LightAbsorption/EmissionProcesses LightAbsorption/EmissionProcesses
characteristic. Some of them, under specific conditions, have
the capacity of light emission.
hf photonenergy
hf ~ E
2
E
1
=E
g
(directGAP)
h:C.Planck(6,6310
34
Js)
f:lightfrequency
STIMULATEDABSORPTION STIMULATEDABSORPTION
g q y
Theincidentphotonisabsorbedby
an electron which increments its
ExcitedState
E
2
N
2
anelectronwhichincrementsits
energylevel
photon
E = hf
E
GAP
21MARCH 2011
Photodetectors
GroundState
E
1
N
1
GCO
SPONTANEOUSEMISSION SPONTANEOUSEMISSION
Anexcitedelectronreleasesenergyin
theformofaphotonwithrandom
ExcitedState
E
2
N
2
frequency,phase,anddirection
I h t li ht (LED)
photon
E = hf
E
GAP
2 2
Incoherentlight(LED)
BoseEinsteinstatistics
( )
2
GroundState
E
1
N
1
RecombinationLifetime RecombinationLifetime
( )
2
m
m m 1 o = +
Averagetimetoreturnto
groundstate
e
-
a E
2
[N]
N
0
r
t
0
e N N
t
=
r
N N
t
c
=
c t
N
0
/e
21MARCH 2011
r
:CarrierLifetime
t
r
t [s]
GCO
STIMULATEDEMISSION STIMULATEDEMISSION
Anincidentphotonforcesanexcited
ExcitedState
E
2
N
2
p
electrontoreleaseitsenergyinthe
formofanewphotonwithexactlythe
same frequency, phase, and direction
2 photons
E h f
E
GAP
1 photon
E = hf
2 2
samefrequency,phase,anddirection
Coherent Light (LSER)
E = hf
GroundState
E
1
N
1
CoherentLight(LSER)
spectra spectra
PoissonStatistics
2
P [W]
2
m
m o =
[ ]
i h
coherent
light
incoherent
light
21MARCH 2011
E
g
/h
f [Hz]
GCO
ThermalEquilibriumCondition ThermalEquilibriumCondition qq
SPONTANEOUSEMISSION SPONTANEOUSEMISSION
STIMULATEDEMISSION STIMULATEDEMISSION
ExcitedState ExcitedState
photon
E = hf
E
GAP
E
2
N
2
2 photons
E
GAP
1 photon
E = hf
E
2
N
2
E = h f
GroundState
E
1
N
1
E = hf
E h f
GroundState
E
1
N
1
STIMULATESABSORPTION STIMULATESABSORPTION
No external energy interchange
B
hf K T >>
Absorptions Emissions
Noexternalenergyinterchange ExcitedState
E
2
h t
E
N
2
Absorptions
Rate
Emissions
Rate
=
G d St t
E
1
photon
E = hf
E
GAP
N
1
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N
i
:CarriersDensity E
i
:Energy
GroundState
GCO
Einstein Relations Einstein Relations
| |
1
P J
S hf
(
EinsteinRelations EinsteinRelations
sp 2 2 r
r AN N = t SpontaneousE.Rate
| |
r
s
A
t
3
S hf
v Wd m
(
=
(

ThermalEquilibrium
[m
3
s
1
]
sp 2 2 r
StimulatedA.Rate
Stimulated E. Rate r r r = +
a 12 1 1
r B N avS N =
r B N avS N =
[m s ] StimulatedE.Rate
a sp st
r r r +
st 21 2 2
r B N avS N
3
12 21
av m
B B
hf J s
(
= =
(

Boltzmann
Statistics
( ) ( )
2
g B B
1
N
exp E K T exp hf K T
N
= =
A B
12 1 2 21 2
B N AN B N = +
AN A B
( ) ( )
21
12 21 B
A B
B B exp hf K T 1
=
2
12 1 21 2
AN
B N B N
=
21
12 1 21 2
A B
B N B N 1
=
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A:Sp.Em.Coef. B
12
:St.Ab.Coef. B
21
:St.Em.Coef. :E.S.D.radiation
GCO
Bl kb d R di ti ( )
3
8 h f v t BlackbodyRadiation
(PlancksFormula)
[Jm
3
]
( )
( )
B
8 h f v
exp hf K T 1
t

( ) ( )
21
12 21 B
A B
B B exp hf K T 1
=
( )
( )
3
B
8 h f v
exp hf K T 1
t
=
r B N
( ) ( )
( )
3
A B 8 h f v

t
( )
1
(
st 21 2
sp 2
r B N
r AN
=
( )
21
12 21
A B 8 h f v
B B B
= t
`
= =

)
( )
1
B
exp hf K T 1 1 ( = <<

Net Stimulated Emission Rate
P(Esp)>>P(Est)
Notinteresting
( ) B N N r r r
1 2 a st e
=
NetStimulatedEmissionRate
[m
3
s
1
]
1 2
N N >
21MARCH 2011
[m s ]
PopulationInversion
GCO
SEMICONDUCTORS PRINCIPLES SEMICONDUCTORS PRINCIPLES SEMICONDUCTORSPRINCIPLES SEMICONDUCTORSPRINCIPLES
1. Theelectronsarelocatedindiscreteenergystatesbeingthelasttwothe
Valence/ConductionBandsseparatedbyanenergyGAP / p y gy
E E
Gas Solid
E
E
V
E
C
e
l
s
E
E
V
E
C
E
g
E
2
E
3
r
g
y
L
e
v
e
E
2
E
3
<0.1eV Conductors
0 1 3 V Semiconductors
E
n
e
r
0.13eV Semiconductors
>3eV Isolators
E
1
E
1
DependingontheenergyGAP,thematerialsaredividedamong:isolators,
21MARCH 2011
conductorsandsemiconductors.
GCO
E electric field
Energy
electron
CONDUCTIONBAND
E electricfield
Electrons
E
2k
B
T
E
GAP
electron
transition
E
C
E
V
hole
VALENCEBAND
Concentration
Holes
2. Electrons in the CB are not tied to any particular atom so they are free to
move along the semiconductor.
Concentration
3. When an electron liberates from its atom and moves to CB leaves a hole in
the VB which is called to have positive charge.
4. An electron placed in CB may return to VB occupying a hole an releasing its
energy that can be in the form of a photon. This process is known as electron
21MARCH 2011
hole recombination.
GCO
Energy
Electrons
Energy
2k
B
T
CONDUCTIONBAND
E
GAP
E
C
E
C
r
g
y
(
E
)
E
F
Fermi
Level
photon
Holes
E
V
E
V
E
n
e
Level
E = hf
Concentration
Holes
VALENCEBAND
WaveVector(k) f
E
(E)
0 1 1/2
1
FermiDiracDistribution
DirectGAP
( )
{ }
1
f B
f (E) 1 exp E E K T

( = +

l
E
photon
E <<E
E
total
21MARCH 2011
E
f
:FermiLevel
E
phonon
<<E
photon
GCO
PP type Semiconductor type Semiconductor PPtypeSemiconductor typeSemiconductor
Some acceptor doping atoms are added which take electrons from the Some acceptor dopingatomsareaddedwhichtakeelectronsfromthe
ConductionBand.Apositivecarrierfluxisproduced.
2k
B
T
CONDUCTIONBAND
E electricfield
Electrons
Energy
electron
E
Electrons
E
C
h l
E
GAP
FermiLevel(Acceptor)
E
V
hole
VALENCEBAND
Concentration
Holes
21MARCH 2011
Concentration
GCO
NN type Semiconductor type Semiconductor NNtypeSemiconductor typeSemiconductor
Some donor doping atoms are added which give electrons to the Conduction Some donor dopingatomsareaddedwhichgiveelectronstotheConduction
Band.Anegativecarrierfluxisproduced.
CONDUCTION BAND
E electricfield
Electrons
Energy
electron
CONDUCTIONBAND
E l ( )
Electrons
E
C
E
GAP
FermiLevel(Donor)
E
V
2k
B
T
hole
VALENCEBAND
Concentration
Holes
21MARCH 2011
Concentration
GCO
PPNUnion NUnion
Homojunction Homojunction
ThermalEquilib. +Voltage
P N P N
+
+
+
+
+
Depletion Layer
P N
V
+
E
n
e
r
g
y
(
E
)
E
f
E
f
E
f
qV
0
E
f
q(V
0
-V)
qV
e
E
n
t
r
a
t
i
o
n
h
e
h
e
h
h
C
o
n
c
e
n
Position
e
h
e
Position
h
e
Position
In Thermal Equilibrium, the Fermi Level has to
be continuous along the PN junction
S
B
qV
I I exp 1
K T
(
| |
=
( |
\ .

Diode
21MARCH 2011
Active Region 110 microns
I
S
:SaturationCurrent
GCO
Heterojunction Heterojunction
PPNUnion NUnion
P P N
P N
Active
R i
) E
q
u
i
l
i
b
.
E
c
P N
Region
0.1 microns
E
f
E
g1
E
g2
E
g1
E
n
e
r
g
y
(
E
)
T
h
e
r
m
a
l
E
E
g
E
n
e
r
g
y
Position
T
Barrier
E
v
E
n
d
e
x
y
(
E
)
E
f
g
e
+
Barrier
R
e
f
.

i
n
n
1
n
2
E
n
e
r
g
y
f
ACTIVE
REGION V
o
l
t
a
g
L
i
g
h
t Guiding
21MARCH 2011
Position
GCO
GAP ( m) E (eV) Material GAP ( m) E (eV) Material
Materials for Optical Sources Materials for Optical Sources
I 1.15 1.11 Si
I 1.88 0.66 Ge
I 1.15 1.11 Si
I 1.88 0.66 Ge
GAP
g
(m) E
g
(eV) Material GAP
g
(m) E
g
(eV) Material
MaterialsforOpticalSources MaterialsforOpticalSources
Fabrication Fabrication
I 0.75 1.58 AlSb
I 0.57 2.16 AlAs
I 0.52 2.45 AlP
I 0.75 1.58 AlSb
I 0.57 2.16 AlAs
I 0.52 2.45 AlP
III IV V VI VII
NO METALS
D 1 70 0 73 GaSb
D 0.87 1.42 GaAs
I 0.55 2.26 GaP
D 1 70 0 73 GaSb
D 0.87 1.42 GaAs
I 0.55 2.26 GaP
g g
c
E h f h = =
B C N O F
Al Si P S Cl
Ga Ge As Se Br
D 7 3 0 17 InSb
D 3.5 0.36 InAs
D 0.92 1.35 InP
D 1.70 0.73 GaSb
D 7 3 0 17 InSb
D 3.5 0.36 InAs
D 0.92 1.35 InP
D 1.70 0.73 GaSb
g
Ga Ge As Se Br
In Sn Sb Te I
Tl Pb Bi Po At
BinariesGaAs (1
st
window)
D 7.3 0.17 InSb D 7.3 0.17 InSb
Tl Pb Bi Po At
TernariesAl
x
Ga
1x
As (1
st
window)
In
x
Ga
1x
As (2
nd
&3
rd
window)
21MARCH 2011
QuaternariesIn
x
Ga
1x
As
y
P
1y
(1
st
,2
nd
&3
rd
window)
GCO
QUANTUM EFFICIENCY QUANTUM EFFICIENCY QUANTUMEFFICIENCY QUANTUMEFFICIENCY
o
N f t
W
I
P
o
o
N fot seg
N e h seg
q
OUT
P hf
I q
=
L
d
P
ACTIVE REGION
lightcurrentcharacteristic
hf
[W]
OUT
hf
P I
q
= q
t
P
o
w
e
r
lasing
stimulated
dP
0.8
LED 6%
l
a
t
i
v
e
O
u
t
p
u
t
emission
dI
LEDq ~ 6%
LASERq ~ 70%
R
e
LED
spontaneous
21MARCH 2011
q:electroncharge(1,610
19
C)
LaserDiodeDriveCurrent
I
th
spontaneous
emission
GCO
Internal / External Quantum Efficiency Internal / External Quantum Efficiency Internal/ExternalQuantumEfficiency Internal/ExternalQuantumEfficiency
i
q
e
q
o
out
o
N fot seg
N e h seg
q
o
out
o
N fot seg
N fot seg
=
o
generated
o
N fot seg
N e h seg
q q q
Siq
i
~ 10
5
total
N e h seg
generated
N o seg
total
g
e i
q q q
Inefficiency Causes Inefficiency Causes
AsGaq
i
~ 0.7
Emittedlightomnidirectionality
Nonradiative recombinations thermal energy
InefficiencyCauses InefficiencyCauses
Non radiative recombinations thermalenergy
Stimulatedabsorptionintheactiveregion
Reflectioninthesourceairtransition
21MARCH 2011
Phonon
GCO
LED LED (Light Emiting Diode) (Light Emiting Diode) LED LED(LightEmitingDiode) (LightEmitingDiode)
fiber
i l
bonding
circular
etchedwell
g
material
metalization
Surface SurfaceEmittingLED EmittingLED
substrate
confinement
layers
double
hetero
junction
SiO
2
isolation
metalization
heatsink
activeregion
circularmetalcontact
f
stripecontact
Edge EdgeEmittingLED EmittingLED
confinement
layers
substrate
metalization
activeregion
metalization
SiO
2
isolation
double hetero
gg gg
metalization
heatsink
doublehetero
junction
21MARCH 2011
slide26 3. OPTICAL SOURCES 3. OPTICAL SOURCES -- LED DIODE LED DIODE
incoherentlight
GCO
LEDcharacteristicfigures LEDcharacteristicfigures
r
80nm
surfaceLED
v
e
p
o
w
e
r
linewidth
100nm
edge LED
r
e
l
a
t
i
v
FWHM
1300 1340 1380 1420 1460 1140 1180 1220 1260
edgeLED
BWupto100MHzR
B
upto100Mb/s
wavelength (nm)
p
B
p /
A huge100nm

21MARCH 2011
P
OUT
verysmall20dBm
GCO
WORKING PRINCIPLE WORKING PRINCIPLE WORKINGPRINCIPLE WORKINGPRINCIPLE
LEDsourceisadiode(PNjunction)directlypolarizedwhichemits
lightbyspontaneousemission(incoherentlight)thankstoan
electronholerecombinationprocess
depletion
region
diffusedelectrons
ntype ptype
incoherentlight incoherentlight
omnidireccional,different
Efield
21MARCH 2011
o d ecc o a , d e e
frequencyandphase
GCO
Carrier Injection Carrier Injection Optical Power Optical Power CarrierInjection CarrierInjection OpticalPower OpticalPower
o
N fot seg
P hf
quantumefficiency quantumefficiency
o
o
N fot seg
N e h seg
q
OUT
P hf
I q
=
I
N Joules
V hf
s
= q
t
W
d
P
N
N
r
s t
L
d
N
t
r
3
N recomb m
s
t
N recomb
V
s
t
N fotons
V
s
q
t
r
s t
r
s t
r
s t
hf
P I = q
N
V hf = q
N I
=
21MARCH 2011
OUT
P I
q
= q
r
V hf = q
t r
qV t
equilibriumstate equilibriumstate
GCO
Light Light Current characteristic Current characteristic Light Light Currentcharacteristic Currentcharacteristic
Representationoftheopticalpoweremittedbythesourceasa
functionofthepolarizationelectricalcurrentintensity
P
o
[mW]
R
L
P
O
o
15
SATURATION
V
cc
I
10
5
LINEAR
hf
I [mA]
0
0 50 100
typicalefficiency:0.05mW/mA [W]
OUT
hf
P I
q
= q
hf
0 8 ~ AsGa q 0 7
21MARCH 2011
0.8
q
~ AsGaq
i
~ 0.7
GCO
Power Spectral Density Power Spectral Density PowerSpectralDensity PowerSpectralDensity
OneofthemaincharacteristicsofLEDdiodesisitsspectralwidthduetothe
f h h l h h ( ) factthatthelightisincoherent(spontaneousemission)
t
B
E 2K T A ~
Directbandtoband
E
Relative Relative Power Power
1
most
probable
jump
B
E 2K T A
Electron
concentration
distribution
Energy
2k
B
T
0.5
Af
distribution
E
C
no.ofelectron
f
0
f f [Hz] [Hz] f
1
f
2
0
[m] [m]
1

2
E
GAP
E
states
no.ofhole
states
E
0
B
0 g
K T
E E
2
= +
1
0.5
A
E
V
Hole
concentration
21MARCH 2011
0 g
2
1
Relative Relative Power Power
concentration
distribution
GCO
Peak wavelength
0
(most probable jump):
E E
Peakwavelength
0
(mostprobablejump):
hc
B
K T
c
hf h
hc
~
0 g
E E =
0
g B
E K T 2
=
+
B
thermal
2
+
0
0
hf h = =
g
E
~
[J]
Spectralwidth A :
(
2 1
2 1 2 1
c c hc hc
f f E E
A = =
0
E E A <<
c 0
E E ~
1 2
1 2
E E
hc
E E
(
=
(

c c
E
hc
E E
E E
A
=
A A
| | | |
+
| |
\ . \ .
2
2
E
hc
E
E
A
=
A
| |
|
\ .
2
0
E
hc
E
A
~
K T
c c
2 2
| |
\ . \ .
c
E
2
|
\ .
B
2K T
hc ~
2 B
2K T
~
21MARCH 2011
B
E 2K T A ~
B
0 g g
K T
E E E
2
= + ~
2
g
hc
E
~
0
hc
~
GCO
2K T
2K T
2
B
0
2K T
hc
A ~
30 100nm
AE
LED
~ 34K
B
T/q
A
B
0 0
0.03 0.06
2K T
hc
=
_
TemperatureEffect:
K T
0.03 0.06
( ) ( )
B
0 g 0
K T
E E T T
2
= +
2K T
A
LED
~ 0.30.4nm/C ( )
2
B
0
2K T
T (T)
hc
A ~
IncoherentLight:
spontaneous emission photons with random frequency phase and spontaneousemissionphotonswithrandomfrequency,phase,and
direction(incoherentlight)
( )
2
21MARCH 2011
BoseEinsteinstatistics
( )
2
m
m m 1 o = +
GCO
LED LOSSES LED LOSSES LEDLOSSES LEDLOSSES
RadiationDiagram RadiationDiagram
L b L LambertsLaw
( )
( ) u u
u = u
P P
cos I I
0
30
40 50
( ) u = u cos P P
0
20
( )
2
T
P 2 P sin
t
= t u ucu
}
LED
source
0
10
cos
n
u
0
( )
a
i
0
P 2 P sin
u
= t u ucu
}
source
10
0
i
c
P
P
q
2
a
sin = u
2
NA
(
=
(

20
cos u
21MARCH 2011
T
P
a
0
n
(
30
40 50
GCO
R f ti I di Mi t h ( fl ti ) R f ti I di Mi t h ( fl ti ) RefractiveIndicesMismatch(reflection) RefractiveIndicesMismatch(reflection)
( ) ( )
a
P 2 1 R P sin
u
= t u u cu
}
( ) ( )
IN
0
P 2 1 R P sin = t u u cu
}
F l L
2
ZA 0
n n
R
| |
|
FresnelsLaw
ZA 0
ZA 0
R
n n
=
|
+
\ .
LED/fiberEffectiveAreaMismatch LED/fiberEffectiveAreaMismatch
( )
a
u
}
( )
IN
0
P 2 LP sin = t u u cu
}
2
| | |
LED fiber
>
LED fiber
fibra
LED
L
| | |
=
|
|
\ .
21MARCH 2011
LED fiber
GCO
LED DYNAMICS LED DYNAMICS LEDDYNAMICS LEDDYNAMICS
Thewaythecarrierequilibriumisrestoredafteracurrentfluctuationcanbe
d l d b h k modeledbywhatisknownasLEDsrateequation
carrier
carrier
density
carrierdensity
density
variation
density
generation
rate
recombination
rate
=

rate
N c
I
N t
t
N
c
c
I
r
, N t
I:electricalcurrent
21MARCH 2011
N:ARcarrierdensity

r
:carrierlifetime
GCO
I
I:ARpolarizationcurrent
W
I
W
d
P
ACTIVE REGION
LEDsrateequation LEDsrateequation
L
I
J
rea
N I N
t V
c
=
c
[m
3
s
1
]
current
density
I
WL
=
I
q V
carrier
generation
r
t qV c t
N N
J
q d
=
q
N
t
carrier
recombination
0
0
N N
t
I 0
=
q
N N c
t
N N
t
Unstimulated state
t
0
21MARCH 2011
r
t
r
t
=
c t
r
t
0
N N e
t
=
t
0

GCO
LEDs modulation LEDs modulation sinusoidal modulation sinusoidal modulation LED smodulation LED smodulation sinusoidalmodulation sinusoidalmodulation
sinusoidalstimulus
P P
o o
[ [mW mW] ]
( )
( )
0
j t
0 I
I(t) I 1 m e
e +|
(
+

(
P
0
( )
( )
0 N
0 N
j t
0 N
j t
0 N
N(t) N 1 m e
P(t) P 1 m e
e +|u
e +|u
(
+

(
+

0 N
( )

I
0
:DCelectricalcomponent
I
0
OpticalPower
I [mA I [mA m m
- -2 2
] ]
p
N(t)
P(t) V hf = q
t
21MARCH 2011
r
t
GCO
ModulationSignal ModulationSignal
( )
0
j t
0 I
I(t) I 1 m e u(t)
e +|
(
= +
0 I
m
modulationindex modulationindex
| | | |
0 r r
j t t t j 0 r I
0
I m
N(t) 1 e e e e u(t)
qV 1 j
e t t |
t
= +

+ e t `
N(t)
P(t) V hf = q
( )
{ }
I
N
2
r 0
1
m
m
1
=
+ t e
u
0
N
0 r
N
m
qV 1 j + e t `

)
_
r
P(t) V hf q
t
( )
{ }
0
j t t
P 1 m e
e +|
+
{ }
1
N r 0
tg
u = t e
| | | |
0 r r
j t t t j I
0
m hf
P(t) I 1 e e e e u(t)
1 j
e t t |

= q +

`
( )
{ }
0
j
0 N
P 1 m e
|
+
| | | |
0 N
0
0 r
P m
( ) ( )
q 1 j
q

+ e t `

)
_ _
I(t)
(1+m
I
) I
0
P(t)
(1+m
I
) P
0
(1+|m
N
|) P
0
I
0
(1-m
I
) I
0
P
0
(1-m
I
) P
0
(1-|m
N
|) P
0
21MARCH 2011
t
0
(
I
)
0
t
0
t
0
t
0
(
I
)
0
GCO
LEDs Transfer Function LEDs Transfer Function LED sTransferFunction LED sTransferFunction
0
P
H( )
I
A
e
A
0
0
I
P hf
q
= q
0
I A
0
0
hf 1
H( )
q 1 j
e = q
+ e t
0
j t
I
0
m
P(t) P 1 e
1 j
e
(
= +
(
+ e t

0
j t
I
0
m
P P e
1 j
e
A =
+ e t
q
0 r
q 1 j + e t
0 r
1 j + e t

0 r
1 j + e t
0
j t
0 I
I(t) I 1 m e
e
(
= +

0
j t
0 I
I I m e
e
A =
hf 1
( )
modulationcutofffrequency modulationcutofffrequency
Lowpassbehavior
( )
0
2
0 r
hf 1
H( )
q
1
e = q
+ e t
0 3dB
r r
1 1
f
2
e = =
t tt
21MARCH 2011
typically:10100MHz
GCO
Digital Modulation Digital Modulation DigitalModulation DigitalModulation
gradecorrent
( )
r
t 0 1 0
I I I
N(t) 1 e u(t)
t
= t + t
0 1 0
I(t) I I I u(t) + (

( )
0
1 0
r r
N
N N
N(t) 1 e u(t)
qV qV
= t + t
_
I I I
( )
r
0 1 0
t 0 1 0
P P P
I I I
P(t) hf hf 1 e u(t)
q q
t
= q + q
_ _
I(t) I(t) P(t) P(t)
I
1
P
1
I
0
P
0
21MARCH 2011
t t
0
0
t t
0
0
GCO
ResponseTime ResponseTime
N(t) N(t)
N
1
N
0
+0.9(N
1
-N
0
)
N
0
+0.1(N
1
-N
0
)
t
r
1 0
N N
| |
|
t
0
N
0
( ) ( )
1 0
0.1 r
1 1 0 0
N N
t ln
N 0.1 N N N
= t |
|
+
\ .
( )
( )
r
t
0 1 0
N(t) N N N 1 e
t
= +
( )
( )
f r
t
f 0 1 0
N N N N 1 e
t
=
1 0
N N
t l
| |
|
( )
( )
f 0 1 0
f r
t
f 0
N N
e 1
N N
t

=
1 f
N N
N N
=
( ) ( )
1 0
0.9 r
1 1 0 0
t ln
N 0.9 N N N
= t |
|
+
\ .
r 0.9 0.1
t t t =
1 0
N N
1 0
f r
N N
t ln
N N
| |
= t
|
\ .
1 0
N N
3dB
1
f
2
=
tt
( )
r
ln 0.9 0.1 = t
( )
1
ln 0.9 0.1
2 t
=
t
1 0
r
P P
ln
P P
| |
= t
|
\ .
21MARCH 2011
f r
1 f
N N
|
\ .
r
2tt
r
2 t t
r
1 f
P P
|
\ .
GCO
MaximumModulationSpeed MaximumModulationSpeed
LEDsresponsetimelimits
h d l i d
I(t) I(t)
themodulationspeed
I(t) I(t)
I
1
3dB,LED
r
1
f
2
=
tt
B
3dB,NRZ
R
f
2
=
3dB,LED 3dB,NRZ
f f >
t t
0
I
0
T
B
P(t) P(t)
3t
B
r
R 1
2 2
>
tt
B
r
1
R s
tt
( ) ( )
P
1
3t
r
typically:t
r
~ 10ns
r
P
0
21MARCH 2011
yp y
r
t t
0
P
0
T
B
GCO
LASER LASER (Light Amplification by Estimulated Emission of Radiation) (Light Amplification by Estimulated Emission of Radiation) LASER LASER(LightAmplificationbyEstimulatedEmissionofRadiation) (LightAmplificationbyEstimulatedEmissionofRadiation)
fi t
dielectricreflecting
layers
Fabry FabryPerotresonantcavity Perotresonantcavity
confinement
layers
crystalplanecleaved
cavityends
lateral size
transversesize
0.10.2m
lasingspot
lateralsize
515m
confinement
layers
DFBlaser DFBlaser
feedback
grating
lasingspot
activeregion
21MARCH 2011
slide44 3. OPTICAL SOURCES 3. OPTICAL SOURCES -- LASER DIODE LASER DIODE
GCO
LASERMainFigures LASERMainFigures
singlemode
laser
p
o
w
e
r
linewidth
multimode
laser
p
o
w
e
r
spectralwidth
FWHM
0.1pm
r
e
l
a
t
i
v
e
linewidth
FWHM
r
e
l
a
t
i
v
e
FWHM
10nm
1550 1555 1560 1565 1570 1530 1535 1540 1545
wavelength (nm)
1550 1555 1560 1565 1570 1530 1535 1540 1545
wavelength (nm)
BWupto10GHzR
B
upto10Gb/s
A very narrow 10 MHz (0 08 pm) A verynarrow10MHz(0.08pm)
P
OUT
high3dBm
21MARCH 2011
GCO
TYPESOFLASERS TYPESOFLASERS
Solid Solid State Lasers: Ruby State Lasers: Ruby
Energy
Solid Solid--State Lasers: Ruby State Lasers: Ruby
Energy
Rapi d decay
M t t bl St t
Opti cal
Pumpi ng
Popul ation
Inversi on
Metastabl e State
Inversi on
3Levels
21MARCH 2011
GCO
Gas Lasers: He Gas Lasers: He--Ne Ne
H N
Energy
He Ne
Rapi d Decay
Metastabl e State
Col l i si ons
Rapi d Decay
4Levels
El ectronic
Impact
Popul ation
Inversi on
Rapi d Decay
21MARCH 2011
Rapi d Decay
GCO
Semiconductor Lasers: Semiconductor Lasers: GaAs GaAs
Energy
Conducti on Band
Energy
R i d D
El ectri cal
Rapi d Decay
Metastabl e State
El ectri cal
Current
Popul ation
Inversi on
Val ence Band
3Levels
21MARCH 2011
Val ence Band
GCO
WORKING PRINCIPLE WORKING PRINCIPLE WORKINGPRINCIPLE WORKINGPRINCIPLE
TheLASERsourceconsistsofanopticalresonantcavitybasedon
thestimulatedemission processandprovidescoherentlight
OpticalCavity PopulationInv.
LaserMedium StimulatedEm.
LaserAmplification Total
Mirror
Partial
Mirror
ExternalEnergy
21MARCH 2011
GCO
Equivalent Model Equivalent Model EquivalentModel EquivalentModel
TheLASERcanbemodeledasanamplificationsystemwithfeedback
Feedback
Ampl i fi cation
Coherent
Li ght
ConditionGain>Losses
Ampl i fi cation
21MARCH 2011
GCO
MATERIALGAIN MATERIALGAIN
P
gP
z
c
=
c
p type
I
OPTICAL POWER
gz
0
P(z) P e =
d
P=P
0
e
gL
P
0
p-type
P(z z) + c P(z)
P
0
e
gz
P
0
g materialunitygain[m
1
]
L
W
d
z z + c z
n-type
POSITION
-
1
]
300
250
200
150
N = 1.8 x 10
18
cm
-3
1.6
]
300
250
InGaAsP
= 1.3 m
t
i
c
a
l
g
a
i
n
[
c
m
-150
100
50
0
1.4
1.2
1 0
e
a
k
g
a
i
n
[
c
m
-
1
200
150
100
N
0
transparency
o
p
t
-50
-100
-150
200
1.0
| |
hc
E eV
q
=
p
e
100
50
0
21MARCH 2011
photon energy [eV]
-200
0.90 0.92 0.94 0.96 0.98
q
carrier density [10
18
cm
-3
]
0
0 1.00 1.25 1.50 1.75 2
GCO
[m
1
]
materialunitygain
g()
y g
( )
( )
2
2 1 2
g N N f
8 n
= u
t t
g()
g
max
A
working
region
2
g
( )
r
8 n t t
A
2
g
max
lineshape
function
( ) ( )
0
f f f 1
u u c =
}

p
[m]
MaterialGainperunitlength MaterialGainperunitlength
( ) ( ) ( )
2
N N N
[m
1
]
mathematicalmodel
() ( ) ( ) ( )
m 0 p
g N, a N N
a:gaincoefficient
[m ]
g()
g
max
g
p
:peakwavelength
:curvaturefactor
N
0
:transparencelevel
A
21MARCH 2011
0
g
p
:peakgain
p
[m]
1

2
GCO
ConfinementFactor ConfinementFactor
Energyfractioninsidetheactiveregion
y
AR
T t l
E
1
E
I s
farfieldpattern
x
Total
E
z
( ) ( )
m
g g I
( )
( )
2
0 p
a N N = I I
NetMaterialGainperunitlength NetMaterialGainperunitlength
( ) ( )
n s
g g o
( )
( )
2
0 p s
a N N = I I o
21MARCH 2011
GCO
OSCILLATIONCONDITION OSCILLATIONCONDITION
FABRYPEROTCAVITY
EE
++
EE
out out
++
EE
out out
--
gg oo
ss
EE
out out
EE
out out
R R
EE
--
R
1
R
2
r
1
r
2
EE
--
z
R
i
:Reflectivity
g:MaterialGainCoef.[m
1
]
0 L
z
21MARCH 2011
i
y
r
i
:Reflectance
o
s
:ScatteringLossCoef.[m
1
]
GCO
B d C di i
PropagationEquations(planewave)
E (z)
+
BoundaryConditions
( )
s
1
g z
2
0
E e
o
+
=
j z
e
| j t
e
e
1
E (0) r E (0)
+
=
E (z)
( )( )
s
1
g L z
2
L
E e
o
=
( ) j L z
e
|
j t
e
e
2
E (L) r E (L)
+
=
j t
0
E (0) E e
+ + e
=
1
r E (0)
=
( )
( )
s
1
g L
j L j t
2
1 L
r E e e e
o
| e
=
( )
s
1
g L
j L
2
0 1 L
E r E e e
o
+ |
=
( )
s
1
g L
j L j t
2
L
E (0) E e e e
o
| e
=
( )
( )
1
( )
1
j t
L
E (L) E e
e
=
2
r E (
+
= L)
( )
s
1
g L
j L j t
2
E (L) E e e e
o
+ + | e
=
( )
( )
s
1
g L
j L j t
2
2 0
r E e e e
o
+ | e
=
( )
s
1
g L
j L
2
L 2 0
E r E e e
o
+ |
=
0
E
+
0
E (L) E e e e =
( )
s
g L
j2 L
1 2 0
r r E e e
o
+ |
=
( )
s
g L
j2 L
1 2
r r e e 1
o
|
=
21MARCH 2011
0
E
1 2 0
r r E e e
1 2
r r e e 1
GCO
ModuleOscillationCondition ModuleOscillationCondition
( )
th s
g L
1 2
1 r r e
o
=
it l
g
th
:thresholdgain
o
c
:cavitylosses
o
t
:totallosses
( )
th s
g L
1
e
r r
o
=
( )
th s
1
ln g L
r r
| |
= o
|
\ . 1 2
r r
1 2
r r
\ .
th s
1 1
g ln
| |
= o +
| s
1 1
ln
| |
= o +
| t
o
th s
1 2
g
L r r
|
\ .
c
s
1 2
2L R R
o
|
\ .
_
t
2
R r =
[m
1
]
i i
R r =
ThresholdGain ThresholdGain
e
gL
e
(g os)L
scattering losses
cavity
losses I
N
|
|
.
|
\
|
+ o = >
s th
R R
1
ln
L 2
1
g g
1
e
(g )
e
(g os oc)L
losses
G
A
I
21MARCH 2011
|
.
\ 2 1
R R L 2
POSITION
0
L
GCO
OPTICALPOWER GainSaturation GainSaturation
ACTIVEREGION
EQUILIBRIUM
SITUATION
0
g
(P)
SITUATION
g(P)=
0
sat
g
g(P)
1 P P
=
+
UnstableSituation(No
t
g < o
g(P)=
t
StableSituation
(Oscillation)
Oscillation)
t
g = o
t
g
t
g > o
UnstableSituation
(Saturation)
(Oscillation)
( )

t
0 L
(Saturation)
g(P)
21MARCH 2011
POSITION
GCO
PhaseOscillationCondition PhaseOscillationCondition
j2 L
1 e
|
=
2 L m 2 | = t
2
2 nL m 2
t
= t
m
L m
=
c
m = 2 nL m 2 = t
L m
2n
=
m
m
2nf
=
c
CavityResonance
Frequencies
OscillationModes OscillationModes
((longitudinal) longitudinal)
m
c
f m
2nL
=
c
f
2nL
A =
f A A
p p
f
f
A A
~
2
p
f

A A
2
p
21MARCH 2011
p
f
c
A ~ A
p
2nL
=
GCO
Fabry FabryPerotInterferometer(Etalon) PerotInterferometer(Etalon)
( )
E
in
E
out
L
( )
( )
( )
2
2 2 2
1
1
j L
out in
j L j L
in
E R e E
R e R e E
|
| |

= +
+ +
R R
( )
4 4 2
1
j L j L
in
R e R e E
| |
+ +
.
( ) H f
( )
2
2
2
4
1
R
E
R
( )
( )
( )
( )
( )
2
2
2 2 2
2 2 2
0
1 1
1
1 sin 1
j L
j L k j k L
out in in
j L
k
R e
E R e E R e E H f
E L R e
|
| |
|
|

= = =
+

Contrast
2 2
max min
1 C H H E = +
1
0.8
w
e
r E=10
E 100
FSR
FreeSpectral Range
2
c
FSR
nL
=
c
B = 3dBBandwidth
0.6
a
l
i
z
e
d
p
o
w
E=100
B
-3dB
0.4
3dB
B
nL E t
=
2
FSR
F E
B
t
= =
3dBBandwidth
Finesse
0.2
0
n
o
r
m
1/(1+E)
21MARCH 2011
3
2
dB
B
0
0 0.5 1 1.5 2 2.5 3 3.5
normalized optical frequency
GCO
CombinedEffect CombinedEffect
Spectrum
P
A >
th
g ) ( g
P
max
g= o
multi-mode
th
[ ]

g= o
t
p
[m]
1

2
Spectrum
P
' g ) ( ' g
th
A >
P
max
single-mode
g= o
g ) ( g
th
[ ]

g= o
t
21MARCH 2011
p
[m]
1

2
GCO
Inhomogeneouly Inhomogeneouly BroadenedMedium BroadenedMedium
((Spectral Hole Burning) Spectral Hole Burning) ((SpectralHoleBurning) SpectralHoleBurning)
Laser Gain
The medium gain does not
saturate homogeneously,it is
l h i i
g
max
wavelength sensitive.
smallsignal gain
o
t
Optical Power Optical Power

P
max
The ouput saturated power is
not uniformly distributed not uniformly distributed
among the lasermodes.
21MARCH 2011
p

GCO
LIGHT LIGHTCURRENTCHARACTERISTIC CURRENTCHARACTERISTIC
Optical Power
I II III IV
Stim. Em.
Spont. Em
I LEDlikelight,SpontaneousEmission
I
th
I
II AmplifiedLEDlikelight,AmplifiedSpont.Em.
IIILaserEffect,CoherentLight,SpontaneousEm.
21MARCH 2011
IVSaturation
GCO
OpticalPowerintheLaserCavity OpticalPowerintheLaserCavity p y p y
R
1
R
2
r
1
r
2
FABRY-PEROTCAVITY
1 2
FABRY-PEROT CAVITY
P(z)
P
g o
s
P(z)
P
+
P
-
g o
s
P
out
P
out
g L g L
0 L
z
L/2
21MARCH 2011
R R R
2 1
= =
n s
g g = o
n n
g L g L
1 2
1 r r e Re = =
GCO
+
| |
| |
g z g L z | | | |
| |
g z L 2 g L 2 z g L 2
P(z) P (z) P (z)
+
= +
n
g z
0
P (z) P e
+
=
| |
| |
n
g z L 2
n
e 1 g z L 2
~ +
| |
| |
n n
g z g L z
0
P e e

= +
| | | |
| |
n n n
g z L 2 g L 2 z g L 2
0
P e e e

= +
| |
n
0
g L z
0
( )
P (z) P e

=
| |
| |
| | | |
n
n
g L 2 z
n n
g
e 1 g L 2 z 1 g z L 2
~ + =
P(z) | | | |
n
g L 2
0 n n
P e 1 g z L 2 1 g z L 2 ( ~ + +

n
g L 2
0
2P e P =
n
g L
out 0
P P e 1 =
( )
R
( )
n
n
g L
g L 2
P
e 1 R
2e
~
( )
n
g L 2
P
e 1 R
2
=
P 1 R
2
R
=
n n
g L g L
1
Re 1 e
R
= =
2e 2 2
R
n
g L 2
1
e
R
=
m
modes
R
2 R
P P
1 R
P P
R
21MARCH 2011
out
P P
1 R
~
out m
m
P P
2 R
~

GCO
PhotonDensity PhotonDensity OpticalPowerRelationship OpticalPowerRelationship yy p p p p
I
W
I
| |
| |
P J s
Fotons
sec. hf J
=
d
S
P
S
P
| |
L
v
PhotonDensityintheActiveRegion PhotonDensityintheActiveRegion
| |
| | | |
3
2
P J s
S [m ]
c
hf J m s Wd m
=
(

n
g z
0
P(z) P e =
+
21MARCH 2011
| | | |
hf J m s Wd m
n
(
n
g z
0
S(z) S e =
GCO
Photon Density in Photon Density in
R R
PhotonDensityin PhotonDensityin
theLaserCavity theLaserCavity
R
1
R
2
r
1
r
2
S(z)
S
FABRY-PEROT CAVITY
S(z)~ ct
S
+
S
-
g o
s
S
out
+
S
out
-
S(z)
Optical Power Optical Power
S S
S
out
S
out
P S v Wd hf =
OpticalPower OpticalPower
0 L
z
L/2
T t l O ti l P T t l O ti l P
( ) P 1 R 2 R S v Wd hf
(
~

( ) 1 R 2 R S v Wd hf
(
=

( )
out
P 1 R 2 R P
(
~

t
1 R
P S v Wd hf
TotalOpticalPower TotalOpticalPower
( )
m m m
P 1 R 2 R S v Wd hf
(
~

out m
P P =
21MARCH 2011
out m p
m
P S v Wd hf
2 R
m p
f f ~
out m
m

GCO
OPTICALPOWERSPECTRUM OPTICALPOWERSPECTRUM
Laser Spectrum
linewidth
S
D
1
LorentzianDistribution
P
P/2
( )
s
2
o
2P f
S(f )
2 f f
1
tc
=
| |
(
|
+
(
|
n
o
r
m
a
l
i
z
e
d
P
0.5
of
f
P/2
FWHM
f
(
| c

\ .
frequency(f)
f
0
0
f A
p f
Finesse
f
F
f
A
c
nL 2
c
f = A
nL 2
2
p
~ A
1.
resonancefrequencies
nL 2
|
|
.
|
\
|
+ o = >
s th
R R
1
ln
L 2
1
g g
2.
gaincondition
21MARCH 2011
|
.
\ 2 1
R R L 2
GCO
LASER DYNAMICS LASER DYNAMICS LASERDYNAMICS LASERDYNAMICS
CarrierandPhotonsconcentrationcanbemodeledusingtwo
coupledrateequations
carrier
variation
carrier
generation
spont.
emission
=

stimul.
emission
variation
rate rate rate
photon
stimul.
emission
photon
absorp.
=

spont.
emission
+
variation
rate
p
rate
=
fraction
+
21MARCH 2011
GCO
TemporalevolutionofPhotonDensity TemporalevolutionofPhotonDensity p y p y
P
gP
z
c
=
c
S
gS
z
c
=
c
I
S S z
gS v
t z t
c c c
= =
c c c
W
I
v
P
vgP
t
c
=
c
W
d
S
0
S
P P
S
vgS
t
c
=
c
D = v t
P P
0
gD g v t
P P e P e

= =
g v t
P
g v P e g v P

c
= =
t c
L
0 0
P P e P e = =
0
g v P e g v P
t
= =
c
P
S =
S 1 P 1
vgP vgS
c c
= = =
21MARCH 2011
S
hf v Wd
=

vgP vgS
t hf v Wd t hf v Wd
= = =
c c
GCO
PhotonVariationintheCavity PhotonVariationintheCavityyy
I
P
out
P
out
S
L
P
out
P
out
S
( )
s
g 2L
2
0
S S e R
o
=
( )
s
1
2ln
g 2L
R
0
S e e
o
=
s
1 1
g ln 2L
L R
0
S e
| |
o
|
\ .
=
( )
t
g 2L
0
S e
o
=
1
2ln
2 2lnR
R
R e e
= =
t s
1 1
ln
L R
o o
( )
t
g d
S(z) S e
o ( )
t
g v t d v t
S(t) S e
o =
( )
t
g
0
S(z) S e =
( )
( )
t
g v t
S(t)
v g S e
o
c
= o
( )
t
g
0
S(t) S e =
( )
v g S(t) = o
21MARCH 2011
( )
t 0
v g S e
t
= o
c
( )
t
v g S(t) = o
GCO
LASERS RATE EQUATIONS LASERS RATE EQUATIONS LASER SRATEEQUATIONS LASER SRATEEQUATIONS
N I
t qV
c
=
c
[m
3
s
1
]
Carriers
r
N
t
i i
i
v g S

q
[m
3
s
1
]
Photons
r i
i
i i
S
v g S
t
c
=
c
t i
v S o
N
+|
t
t c
r
t
1
t
p
v
1
o
t
photonlifetime
[s]
N:carrierdensityintheAR I:electricalcurrentintensity
S:photondensityintheAR t
r
:carrierlifetime
g
i
: net espont emission gain |: spontaneous emission coeff
21MARCH 2011
g
i
:netespont.emissiongain |:spontaneousemissioncoeff.
o
t
:cavitytotallosses subindexi:mode#i
GCO
StaticBehavior StaticBehavior
N I N
v gS 0
t qV
c
= =
c t
singlemodecavity
r
t
t qV
S N
v gS v S 0
t
c t
c
= o + | =
c t
stationaryregime 0
t
c
=
c
<< |
r
t c t
i i
=
|
t t
v gS v S 0 g o = = o
emission p

( ) ( )
2
0 p
g a N N = I I
t t
( )
t
0 t 0
a N N N N
a
o
I = o = +
I
t
I N
v S 0
qV
o =
t
t
p
v
1
o
t
r
qV t
I N
S
V
=
p
p
I
N
qV
t
= t
t
p
t
p 0
I
N
qV a
t
o (
= t +
(
t I
21MARCH 2011
t t r
v qV v o o t
p
r
qV t
p
r
qV a
(
t I
GCO
LinealwithI
ConstantwithJ Carriers Photons
t
0 th
N N N
o
= +
I
p
t
p 0
I
S N
t
o
(
= t +
(

[m
3
]
[m
3
]
S [10
21
m
-3
] N [10
24
m
-3
]
0 th
a I
p 0
r
qV a
(
t I
S [10 m ] N [10 m ]
N
th
N
4
5
3
S 0 =
inflexionpoint
S
2
3
2
th
S 0
N N
=
=
2
1
1
th th
I N I N
= =
LEDbehavior
I
th
I
0
I : threshold current
r r
qV qV
t t
21MARCH 2011
Spontaneous E. Stimulated E.
LED LASER
I
th
:thresholdcurrent
N
th
:thresholdcarrierdensity
GCO
LaserActivationCondition LaserActivationCondition
th th
I N
=
t
0
qV qV
I N N
o (
= = +
(

Th i i t h t
ThresholdCurrent ThresholdCurrent
(
r
qV t
th th 0
r r
I N N
a
+
(
t t I
Theminimumcurrenthasto
compensatefortheMedium
TransparencyandTotalLosses
t t
0 0
r r r
qV qV qV
I N N
a a
o o (
> + = +
(
t I t t I
_ _
T.Medi P. Totals
PhotonDensity PhotonDensity
p
t
p 0
r
I
S N
qV a
t
o
(
= t + =
(
t I
th
p p
I I
qV qV
= t t
p
th
I I
qV
t
= (

t
qV
I N
o (
= +
(
t th
I 1
N
o (
+ =
(
21MARCH 2011
th 0
r
I N
a
= +
(
t I
0
r
N
a qV
+ =
(
t I
GCO
OutputOpticalPower OutputOpticalPower
1
p p p p
( )
( )
out
P 1 R 2 R S v W d hf =
th
I I >
( )
p
S I I
t
t
p
v
1
o
t
( )
p
th
th
S I I
qV
N N
~
=
( )
( )
( )
out th
t
hf
P 1 R 2 R I I
q L
=
o
th
t
q
i i l h i fl i i l h i fl
I
activeregionlengthinfluence activeregionlengthinfluence
( )
hf
I
J
WL
=
( )
( )
out
t
hf
P 1 R 2 R
q L o
= WL
( )
L 0
th
J J 0

L 0
t
th 0
qd
J N
a
o
t I

(
= +
(

+
t s
1 1
ln
L R
o o
21MARCH 2011
r
a t I
GCO
TemperatureEffect TemperatureEffect
W
)
5
20
o
C
30
o
C
40
o
C
50
o
C
t
P
o
w
e
r
(
m
W
4
40 C
ThresholdCurrent&OpticalPower ThresholdCurrent&OpticalPower
th out
T I , P | | +
i
v
e
O
u
t
p
u
t
1
2
T
R
e
l
a
t
20 30 40 50 20 0
0
1
20
LaserDriveCurrent(mA)
(
d
B
m
)
10
50
o
C 20
o
C
30
o
C 40
o
C
p
u
t
P
o
w
e
r
(
0
T
T f | | +
Wavelenth/frequency Wavelenth/frequency
O
u
t
p
10
c c
T , f | | +
21MARCH 2011
Wavelength(m)
1.58
20
1.55 1.56 1.57 1.54 1.53
GCO
ModalConditionofaLaserDiode ModalConditionofaLaserDiode
1.
gainprofile
S
( ) ( ) ( )
2
m 0 p
g a N N
S
m = 0
m = 1
Thesharperthegainprofilethemore
( )
p m m
g S | + +
m = 1
m = 2
m = 3
singlemode
I
I
I I
2.
biascurrent
I
th
I
Spont. Em. Stimulated Emission
I
1
I
2
SpontaneousEm.(LEDeffect)
Theefficiencydependsonthemode(LASER)
I<I
th
I>I
th
21MARCH 2011
GCO
The Side Mode Suppression Ration increases with the bias current The higher TheSideModeSuppressionRationincreaseswiththebiascurrent.Thehigher
thecurrentthemoresinglemode
PP
out
A
P
2
0 1 2 3 -3-2-1
A
P
1
I
I
0 1 2 3 -3-2-1
I I
>
a 3 dB 20
P
log 10 SMSR
o
PRACTICAL SINGLE MODE CRITERION
I
th
I
I
1
I
2
21MARCH 2011
>
a 2 dB 13 p
log 10 SMSR
1
o
PRACTICALSINGLEMODECRITERION
GCO
3.
| parameter
3.
| p
DeterminesthespontaneousemissionfractionintheLD
P
out
,I=ct
r
i t i i
i
N
S v S g v
t
S
t
| + o =
c
c
r
S
SAT
,P
SAT
|
| = 10
-3
| = 10
-4
| = 10
-5
| + singlemodality|
A
A
A
4.
cavitylength
nL 2
2
p
~ A
L+ singlemodality|
tradeoffwith
opticalpower
21MARCH 2011
nL 2
GCO
LASERSDIRECTMODULATION LASERSDIRECTMODULATION
ModulationTechniques ModulationTechniques
IntensityModulation opticalpower(IM)
(direct detection)
FieldModulation
amplitude(ASK)
frequency(FSK)phase
(PSK)
(coherent detection)
(directdetection)
(coherentdetection)
I+info
DirectModulation
I info
ExternalModulation
21MARCH 2011
GCO
SinusoidalModulation SinusoidalModulation
P
out
N I
t qV
c
=
c
r
N
t
v g S
S
S
c
v S o v g S
t
=
c
t
v S o
P
0
I
h
I
I
0
0
j t
0 I
I(t) I 1 m e
e
(
+

I
th
I
I
0
0 I
I(t) I 1 m e
(
+

I
m 1 <<
21MARCH 2011
SmallSignal!!
GCO
ResponsetoaSinusoidalSignalinPermanentRegime ResponsetoaSinusoidalSignalinPermanentRegime p g g p g g
StaticRelations ( )
p
th
S I I
qV
t
= ( )
0
j t
0 I
I(t) I 1 m e u t
e
(
+

Carriers Carriers
j t
I j m e (
th
N N =
r
th th
N I
qV
t
=
0
N
j t
0 0 I
th 2 2
th r c 0 0
m
I j m
N(t) N 1 e
I j2
e
e (
= +
(
t e e + oe
(

_

o:laserdampingfactor~10
9
e : laser resonance frequency ~ 10
12
0
r
1
2 v a S
a S
o + I
t
I
Photons Photons
e
c
:laserresonancefrequency~ 10
12
2 0
c
p
v a S I
e
t
( )
p
0 0 th
S I I
qV
t
=
0
2
j t
0 c
0 I 2 2
0 th c 0 0
I
S(t) S 1 m e
I I j2
e
( e
= +
(
e e + oe
(
(

21MARCH 2011
slide82 3. OPTICAL SOURCES 3. OPTICAL SOURCES -- APPENDIX APPENDIX
S
m
(
(

_
GCO
LaserOutputPowerinPermanentRegime LaserOutputPowerinPermanentRegime p g p g
1 R
P(t) v Wd hf S(t)
2 R
=
( )
0
j t
0 I
I(t) I 1 m e u(t)
e
(
= +

0
2
j t
0 c
0 I 2 2
I
P(t) P 1 m e
I I j2
e
( e
= +
(
e e + oe
(
0 0
1 R
P v Wd hf S
2 R
=
S
0 th c 0 0
m
I I j2 e e + oe
(
(

_
( )
p
0 0 th
S I I
qV
t
=
1
t
t
p
v o
t
( )
0
2
j t
c
1 R 1 hf
P(t) I I I m e P P(t)
e
( e
= + = + A
(
( )
0
0 th 0 I DC 2 2
t c 0 0
M( )
P(t) I I I m e P P(t)
L q j2
2 R
e
= + = + A
(
o e e + oe
(
(

_
( )
DC 0 th
1 R 1 hf
P I I
L q
2 R
=
o
0
j t
0 I 0
1 R 1 hf
P(t) I m M( )e
L q
2 R
e
A = e
o
21MARCH 2011
t
L q
2 R
o
t
L q
2 R
o
GCO
LaserTransferFunction LaserTransferFunction(SmallSignal) (SmallSignal) ( g ) ( g )
P A
0
j t
0 I 0
1 R 1 hf
I m M( )e
L q
2 R
e
e
o 1 R 1 hf P
I
A
A
0
t
j t
0 I
L q
2 R
I m e
e
o
=
0
t
1 R 1 hf
M( )
L q
2 R
= e
o
0
j t
0 I 0
t
1 R 1 hf
P(t) I m M( )e
L q
2 R
e
A = e
o
2
c
H( ) M( )
e
e = e =
0
j t
I 0
I(t) m I e
e
A =
0 0 2 2
c 0 0
H( ) M( )
j2
e = e =
e e + oe
2
0 2
2 2
1
M( ) e =
(
2
2 2
0 0
2
c c
1 2
(
e e | | (
+ o
(
| (
e e
(
\ .

21MARCH 2011
2
nd
orderlowpassfilter
GCO
( )
2
2 1
M( )
10
2
( )
2
0 c
M e e
0
c
o e =
2
0 2
2 2
0 0
2
c c
M( )
1 2
e =
(
e e | | (
+ o
(
| (
e e
(
\ .
10
1
0.1
c
o e =
0
1
2
r
v a S o
t
+ I
10
-1
10
0
1 2
c
o e =
3dB
2 0
c
p
v a S
e
t
I
t
10
-2
10
1
1
c
o e =
( )
0 0
p
th
S I I
qV
t
=
0 0.5 1 1.5 2 2.5 3 3.5 4
0 c
e e
Tradeoff
1 2
c
o e <
1 2 o e >
resonance
BW < e
c
BW e
21MARCH 2011
1 2
c
o e >
c
BW < e
GCO
o
J 1 | |
c
e
noresonance
region
sp ph
1 1 2
| |
t t
|
|
0
sp th
2 0
J 1
2 J
J 1
1
| |
o =
|
t
\ .
| |
|
0
N 0 =
h
t
1
2
ph sp
|
t t
\ .
2 0
c
sp ph th
1
J
e =
|
t t
\ .
( )
2
0
M f
0
2 =
th
I I
1 2
ph
sp
t
t
0 th
J J
3
0 th
0
3 =
th
I I
sp
1ns
10
t =
2
1
0
4 =
th
I I
ph sp
10 t = t
1
0
0 2 1
0
=
th
I I
21MARCH 2011
0 2 1
frequency (GHz)
GCO
DigitalModulation DigitalModulation gg
P
out
P
1
P
0
I
th
I I
0
I
1
0 th 1
I I I < <
CASE1
CASE2
th 0 1
I I I < <
21MARCH 2011
GCO
DigitalModulation DigitalModulation CurrentStep CurrentStep
inside the laserworking regime
(particular case of Appendix 2 when
( )
0 1 0
I(t) I I I u(t) = +

(particularcaseofAppendix 2when
e
0
=0, & m
I
=(I
1
I
0
)/I
0
)
I(t ) A
_
Carriers Carriers
2 2 2
c
O e o
( )
t
1 0
I I e
N(t) sin t u(t)
qV
o
A = O
O
Carriers Carriers
qV O
I I 1 (
Photons Photons
( ) ( )
t t 1 0
0 2
2 2
c
c
I I 1
S(t) v a S 1 e sin t e cos t u(t)
qV
I I 1
o o
o (
A = I O O ~
(
e
e o

( )
t 1 0
0 2
c
I I 1
S(t) v a S 1 e cos t u(t)
qV
o
( A ~ I O

e
21MARCH 2011
dampedsinusoidaloscillationsshifted90
GCO
0 th 1
I I I < <
0 th 1
N(t)
N
TH
0
I
N t =
t
0 r
N
q V
t =
S(t)
L
E
D
S
1
N
t
0
0
r
N
S
vL
q
t
=
21MARCH 2011
t
0 t
r
GCO
Only Spontaneous Emission (LED)
( )
I(t) I I I u(t) = +
( )
( )
( )
r
t
r r
0 1 0
N t I I I 1 e u t 0 t t
t
t t
= + s s (

OnlySpontaneousEmission(LED)
( )
0 1 0
I(t) I I I u(t) = +
( )
( )
( )
0 1 0 r
N t I I I 1 e u t 0 t t
qV qV
+ s s (

Response Time
1 0
I I
t ln

= t
0
I 0 =
1 th
r r
I I
t ln
I I 1
= t
ResponseTime
r r
1 th
t ln
I I
t
1 th
I I 1
t
r
r
LED
r
19 . 2 t t =
Inthiscasewehavenota
fixedt
r
aswehadwithaLED
t
r
21MARCH 2011
e/(e-1)
I
1
/I
th
GCO
th 0 1
I I I < <
th 0 1
N(t)
N
TH
t
S(t)
S
1
t
t
S
0
21MARCH 2011
0 t
r
GCO
Always Stimulated Emission (LASER)
( )
1 0
I I
N t N t 0 t t
~ + s s
AlwaysStimulatedEmission(LASER)
First order approximations
ofcarriers andphotons
functions in the rise time
( )
TH r
N t N t 0 t t
q V
~ + s s
( ) ( )
2
v a
S t S exp I I t 0 t t
( I
~ s s
(
functions inthe rise time
( ) ( )
0 1 0 r
S t S exp I I t 0 t t
2qV
~ s s
(

( ) S t S =
N d d ( ) ( ) ( )
1 2
ln I I I I
2 V
(
ResponseTime
( )
1
S t S =
Not
r
dependence ( ) ( ) ( )
1 th 0 th
r
1 0
ln I I I I
2qV
t
v a I I
(

( ~
I
(

Theresponsetimeinthiscaseismuchfaster.
| +
21MARCH 2011
I
1
I
0
= oI
th
I
1
| t
r
+
GCO
MODERN LASER STRUCTURES MODERN LASER STRUCTURES MODERNLASERSTRUCTURES MODERNLASERSTRUCTURES
Coupled Cavities Coupled Cavities CoupledCavities CoupledCavities
COUPLEDFABRY-PEROTCAVITIES
R
COUPLEDFABRY PEROT CAVITIES
R R
21MARCH 2011
L D
GCO
2
A
FP
1
1
1
Ln 2
= A
1
A
2
2
2
Dn 2
= A
FP
2 2
2
A
FP
2
2
2 1
2 Dn Ln
A =
2
2n D L
n n n
1 2
= =
A
DFP
MHz 30 ~ c
tunning~ 5nm
21MARCH 2011
tunning 5nm
speed~ 1s
GCO
Distributed Feed Distributed Feed Back (DFB Back (DFB) Lasers ) Lasers DistributedFeed DistributedFeedBack(DFB Back(DFB)Lasers )Lasers
Refracti ve Index
n 2
m L

= A
Grati ng
ACTIVEREGION
n 2
Cavi ty modes
p
e
c
t
r
a
l

s
i
t
y
f
Gai n Curve
DFB Gai n
Curve
P
o
w
e
r

s
p
d
e
n
s
frequency
Lasi ng spectrum
Curve
e
c
t
r
a
l

t
y
P
o
w
e
r

s
p
e
d
e
n
s
i
t
21MARCH 2011
frequency
GCO
Distributed Feed Distributed Feed Back (DFB Back (DFB) Lasers ) Lasers DistributedFeed DistributedFeedBack(DFB Back(DFB)Lasers )Lasers
A/ 4
1/4-wave shi fted
G ti Grati ng
ACTIVEREGION
s
p
e
c
t
r
a
l

n
s
i
t
y
Cavi ty modes
Gai n Curve
frequency
P
o
w
e
r

s
d
e
n
Gai n Curve
1/4-wave shi fted
DFB Gai n Curve
frequency
p
e
c
t
r
a
l

i
t
y
Lasi ng spectrum
MHz 10 ~ c
tunning~ 5 nm
P
o
w
e
r

s
p
d
e
n
s
21MARCH 2011
g
frequency
speed~ 1s
GCO
Distributed Bragg Distributed Bragg Reflector Reflector (DBR (DBR) Lasers ) Lasers DistributedBragg DistributedBraggReflector Reflector(DBR (DBR)Lasers )Lasers
I
tuning
I
lasing
ptype
wavelength
dependent
mirrors
ntype
ACTIVEREGION
DBR DBR
mirrors
2
m L

= A
resonant
wavelengthsof
grating1
n 2
resonantwavelength
ofLaser
MHz 30 ~ c
tunning ~ 15 nm
resonant
wavelengthsof
grating2
21MARCH 2011
tunning 15nm
wavelength
speed~ 10ns
GCO
Sampled Grating DBR (SG Sampled Grating DBR (SGDBR) Lasers DBR) Lasers 3 sections 3 sections SampledGratingDBR(SG SampledGratingDBR(SGDBR)Lasers DBR)Lasers 3sections 3sections
I
coarse
I
lasing
I
fine
ptype
ntype
ACTIVEREGION
DBR DBR
type
DBR DBR
I
gain
I
phase
I
bragg
p type
I
gain
I
phase
bragg
10MH c
tunning~ 30nm
ptype
A.REGION
h
d 0 1
10MHz c ~
21MARCH 2011
ntype
phase DBR
speed~ 0.1ns
GCO
Grating Coupler Sampled Reflector (GCSR) Lasers Grating Coupler Sampled Reflector (GCSR) Lasers 4 sections 4 sections GratingCouplerSampledReflector(GCSR)Lasers GratingCouplerSampledReflector(GCSR)Lasers 4sections 4sections
1 MH c
I
gain
I
phase
I
bragg
I
coupler
1 MHz c ~
tunning~ 100nm
ptype
A.REGION
speed ~ 0.1 ns
1620
ntype phase DBR
sampled
speed 0.1ns
1600
1580
100
(
n
m
)
p
grating
directional
coupler
1560
1540
100nm
a
v
e
l
e
n
g
t
h
phase
section
coupler
1520
1500
w
a
Laser
Output
21MARCH 2011
0 20 40 60 80 100
current(mA)
wavelength
GCO
External Cavity Lasers External Cavity Lasers ExternalCavityLasers ExternalCavityLasers
Lens
Output
KHz 50 ~ c
p
FiberBraggGrating
LaserDiode
FiberLasers FiberLasers((nonsemi nonsemiconductor) conductor)
ErbiumDopedFiber FBG FBG
Output Pump
980nm
100%mirrorat
selectedwavelength
580%mirrorat
selectedwavelength
21MARCH 2011
OutputPower~10W
GCO
VerticalCavitySurfaceEmittingLasers(VCSELs) VerticalCavitySurfaceEmittingLasers(VCSELs)
Cheap singlemode Lasers @ Cheapsinglemode Lasers@
1
st
,2
nd
,and3
rd
window
(a)metallicreflectorVCSEL (b)etchedwellVCSEL
21MARCH 2011
(c)airpostVCSEL (d)burnedregrouwth VCSEL
GCO
APPENDIX 1 APPENDIX1
LEDmodulation
21MARCH 2011
GCO
LEDs modulation LEDs modulation sinusoidal modulation sinusoidal modulation LED smodulation LED smodulation sinusoidalmodulation sinusoidalmodulation
sinusoidalstimulus
P P
o o
[ [mW mW] ]
( )
( )
0
j t
0 I
I(t) I 1 m e
e +|
(
+

(
P
0
( )
( )
0 N
0 N
j t
0 N
j t
0 N
N(t) N 1 m e
P(t) P 1 m e
e +|u
e +|u
(
+

(
+

0 N
( )

I
0
:DCelectricalcomponent
I
0
OpticalPower
I [mA I [mA m m
- -2 2
] ]
p
N(t)
P(t) V hf = q
t
21MARCH 2011
r
t
GCO
Puresinusoidal Puresinusoidalstimulusresponse stimulusresponse pp
N(t) N(t) I(t)
t qV
c
+ =
c t
( )
0
j t
I 0
I(t) m I e u(t)
e +|
=
TF
r
t qV c t
( )
( )
j
I 0 0
0
1
I( ) m I e
j
|
(
e = tc e e +
(
e e

( )
0

m I N( ) 1 e
(
( )
( )
j I 0
0
r 0
m I N( ) 1
j N( ) N(t 0 ) e
qV j
+ |
e
(
e e = + = tc e e +
(
t e e

m I 1 1
(
( )
( )
j I 0
0
0
m I 1 1
N( ) e
1
qV j
j
|
(
e = tc e e +
(
e e

e+
t
21MARCH 2011
r
t
GCO
m I 1 1 1
(
( )
( )
j I 0
0
0
m I 1 1 1
N( ) e
1 1
qV j
j j
|
(
e = tc e e +
(
e e
e+ e+
(
t t
(
( )
( )
0
0
0 0
r r
1 1 1 1
1 1 1
j
j j j
(
c ee
(
ee
e + e+ e + (
t
(

t t
(
(
(

_ _
0
r r r
t t t
(

( )
j
m I 1 1 1
|
(
( )
( )
{ }
j t 1
0
j I 0
0
0
0
( )
m I 1 1 1
e
1 1
qV j
j j
e
|
(
= tc e e +
(
e e
e + e+
(
t t
(
_
TF
1
{ }
{ }
j t 1
0
t 1
r
r r
F e u(t )
F e u(t )
e
t
t t
(
(

_
| |
( )
0 0 r
j
j t j t t t
0 r 0 r I I
0 r 0 r
I I m e m
N(t) e e u(t) e
qV 1 j qV 1 j
|
e +| e t
t t
=
+ e t + e t
21MARCH 2011
0
N
N
m
_
GCO
Step Stepstimulusresponse stimulusresponse
( )
0 0
I
j t 0
I 0 0 m 1
I(t) m I e u(t) I u(t)
e +| e =|=
=
=
( )
( )
0
0 j
1 1
I( ) m I e I
e =|= |
( (
e tc e e + tc e +
( (
( )
( )
( )
0
I
j
I 0 0 0 m 1
0
I( ) m I e I
j j
| |
=
e = tc e e + tc e +
( (
e e e

| | | |
0 0 r r
j
0 j t t t 0 r 0 r I
I I m e
N(t) e e u(t) 1 e u(t)
|
e =|= e t t
t t
| | | |
0 0 r r
I
j 0 r 0 r I
m 1
0 r
t 0 r
N(t) e e u(t) 1 e u(t)
qV 1 j qV
I
|
=
=
+ e t
t
Pure sinusoidal Pure sinusoidal stimulus response stimulus response

qV
( )
{ }
0
j t
0 I
I(t) I 1 m e u(t)
e +|
= +
Puresinusoidal Puresinusoidalstimulusresponse stimulusresponse
| | | |
0 r r
j
j t t t 0 r I
I m e
N(t) 1 e e e u(t)
qV 1 j
|
e t t
t
= +
`
+ e t
)
{ }
0 I
( ) ( )
( )
0
0 r
j t t 0 r I
0 r
qV 1 j
I m
1 e
qV 1 j
e +|
+ e t
)
t
+

+ e t `
21MARCH 2011
N
0 r
m
q j `

)
_
GCO
APPENDIX 2 APPENDIX2
LASERmodulation
21MARCH 2011
GCO
SinusoidalModulation SinusoidalModulation
r
N I N
v gS 0
t qV
S
S S 0
c
= =
c t
c
P
out
t
v gS v S 0
t
= o =
c
P
0
I
h
I
I
0
0
j t
0 I
I(t) I 1 m e
e
(
+

I
th
I
I
0
0 I
I(t) I 1 m e
(
+

I
m 1 <<
21MARCH 2011
SmallSignal!!
GCO
( )
0
j t
I(t) I 1 m e u t I I(t)
e
(
+ + A

modulation current
( )
0 J 0
I(t) I 1 m e u t I I(t)
(
+ + A

stationaryregime
modulationcurrent
static behavior
0
0 e
y g
( )
p
th
S I I
V
t
=
I I 1 (

staticbehavior
( )
th
th
qV
N N =
0 J
I I 1 m + (

( )
p
S I I
t
=
( )
p
0 th
I I
t
=
p
J 0
m I
t
+
i id l i
( )
th
S I I
qV
( )
0
0 th
S
qV
_
J 0
S(0)
m I
qV
A
+
_
) t ( S S S A
sinusoidalregime
h d
) t ( N N N
) t ( S S S
th
0
A +
A +
S
0
:DCphotondensity
N
th
:DCcarrierdensity
i id l ill i
21MARCH 2011
sinusoidaloscillation
GCO
) t ( S S S A +
N I N c
CarrierRateEquation
( )
( )
p
0
g a N N
= I ) t ( N N N
) t ( S S S
th
0
A +
A +
r
N I N
vgS
t qV
c
=
c t
0
I I N + A cA
( ) ( )
th
g N g N N = + A ( )
t
th 0
a N N a N
o
= I + I A
_
th
N N + A
| | ( )
N S S I A A
0
t qV
=
c
t
th
r
t
| | ( )
t 0
v a N S S o + I A + A
t
t
th 0
N N
a
o
= +
I
r
th th
N I
qV
t
=
( )
p
0 0 th
S I I
qV
t
=
0 th
S
I I N
t qV
t
cA
=
c
_
p
t
1
v
t
o
r
N A
t
| | ( )
t 0
v a N S S o + I A + A
I
qV
A
+
0 p
S t
0
S N
t
cA
=
c t
N A
t
0
0
i
S S
v a N S v a N S
(
A
+ + I A + I A A
(
t t
(

_
I
qV
A
+
21MARCH 2011
p
t c t
r
t
p p neglible
t t
(

qV
GCO
c
0
r p
N 1 S I
N v a S
t qV
| |
cA A A
= A + I +
|
c t t
\ .
(1)
t
c
c
PhotonRateEquation
r p
q
\ .
1
q
S N
v g S v S
c
= o + |
S g
1
| |
~
|
p
t
1
v
t
o
0
S S S(t) + A
t
r
v g S v S
t
= o + |
c t
( )
S S
a N S
+ A
o + I A cA | |
p t
1 ~
|
t o
\ .
t
g a N = o + I A
( )
0
t
p t
S S
a N S
1
t
+ A
o + I A cA | |
=
|
c t o
\ .
0
v a S N = I A
negligible
v a S N + I A A
_
(2)
0
S
v a S N
t
cA
~ I A
c
21MARCH 2011
t c
GCO
Derivate (1) and substute in (2) Derivate(1)andsubstute in(2)
2
0
v a S N N 1 1 I
| | I c A cA cA
0
0 2
r p
v a S N N 1 1 I
v a S N
t qV t t
| | I c A cA cA
+ + I + A =
|
c t t c c
\ .
9
12
0
r
1
2 v a S o + I
t
e
c
12
2 0
c
p
v a S I
e
t
CarrierOscillationEquation CarrierOscillationEquation
2
2
c
2
N(t) N(t) 1 I(t)
2 N(t)
t t qV t
c A cA cA
+ o + e A =
c c c
0
e << o
21MARCH 2011
q
GCO
SinusoidalOscillation SinusoidalOscillation
0
j t
I 0
I(t) m I e u(t)
e
A =
2
2
c 2
N(t) N(t) 1 I(t)
2 N(t)
t t qV t
c A cA cA
+ o + e A =
c c c
TF
( )
( )
I 0 0
0
1
I( ) m I
j
(
A e = tc e e +
(
e e

q
2 2
1
2 2
c
1
N( ) j2 N( ) N( ) j I( )
qV
e A e + oeA e + e A e = eA e
(
( )
( )
( )
2
2 2
c
2 2
c I 0 0
0
j
1 1
N( ) j2 m I j
qV j
e o + o+ e
(
( A e e + oe e = e tc e e +
(
e e
(

_
2 2 2
( )
( )
( )
I 0
0 2
2
0
m I 1 1
N( ) j
qV j
j
(
A e = e tc e e +
(
e e
O + o + e

2 2 2
c
O e o
21MARCH 2011
113
( )
( )
0
qV j
j
e e
O + o + e

GCO
(
I
m
N( ) A e =
( )
( )
( )
( )
( )
( ) ( )
0
0
0 2 2
2 2
0
1
j j
1 1
I 1 1 1
j
qV j
j j
( o+ e + o+ e
c
(
e tc e e +
(
e e
O + o + e O + o + e
(
(
_ _
( ) ( ) (
( )
( ) ( )
( ) ( )
( ) ( )
0
0
2
2
2 2
2 2
0 0
0
1
j j
1 1
j j
j j
( o+ e + o+ e
c ee
(
O + o+ e ee
O + o+ e O + o+ e (

(
(

( )
( )
( )
( ) ( )
j
0
I 0
0 2
2
0
0
1
j j
m I j 1
N( )
qV j
j
o + e + o + e
e
A e = tc e e +
e e
O O + o + e
_
( )
2
2
j j
j
o+ e
(
(
+ o + e
(
(
_
j t
0
1
e u(t )
2
e
t
( ) ( )
0
2 2 2 2
j j
j j
o+ e o+ e
+
O + o+ e O + o+ e
(
(

0
j j o + e O o + e (
TF
1
( )
( )
( )
( )
t t
0
2 2
2 2
e sin t u(t ) e cos t u(t )
j j
j j
o o
O O
(

(
O
O + o + e O + o + e
(
(
_ _
21MARCH 2011

GCO
I
m
N(t) A
( )
j t t 0 0
I j 1
(t) i t (t)
e o
o + e c
O
I
N(t) A =
( )
( )
0
j t t 0 0
2
2
0
j
e u(t) e sin t u(t)
qV t
j
e o
c O
O + o + e
( )
t
e cos t u(t)
o

O
`
))
{ }
0 0 0 0
j t j t j t j t
0 0
e u(t) j e u(t) e (t) j e u(t) (t)
t
e e e e
c
= e + c = e + c
c
( ) ( )
t t 0 0
j j
e sin t u(t) e sin t
t
o o
o + e o + e c
O = o O + o
`
c O O )
( )
( )
t
0
j e cos t u(t)
j
o
(
+ e O
(

( )
t 0
0
j
e sin t (t)
o
o + e
+ O c
O
_
( )
{ }
( )
t t
e cos t u(t) e cos t
t
o o
c
O = o O
c
( ) ( )
t t
(t )
e sin t u(t) e cos t (t)
o o
c
(
O O + O c

_
21MARCH 2011
GCO
j t

( )
0
j t
0
I 0
2
2
j e u(t) (t)
m I 1
N(t)
qV
j
e
e + c
A =
O + o + e
(t) c
( ) ( )
t t 0
0
j
e sin t j e cos t
u(t)
o o

+

o + e (
` o O e O
(
+ O

(
( )
0
qV
j O + o + e
( )
t
u(t)
e sin t
o
+ O

(

+O O (

)
( )
( )
0
j t t I 0 0
0 2
2
0
m I j 1
N(t) j e e sin t
qV
j
e o
o + e (
A = e + o + O O
(
O
O + o + e
( )
( )
t
0
j e cos t u(t)
o

e O
`
)
PermanentRegime
( )
0
j t
I 0 0
2 t
2
0
m I j
N(t) e
qV
j
e
e
A = =
O + o + e
0 0
I 2 2
I j
m
qV j2
e
=
e e +
0
j t
e
e
oe
2 2 2
O e o
( )
0
q
j O + o + e
Carriers
c 0
qV j2 e e +
0
oe
21MARCH 2011
c
O e o
Carriers
GCO
Ph t
m I j 1 o + e c
S(t) cA
Photons ( )
0
j t t I 0 0
2 2
c 0 0
m I j 1
N(t) e e sin t
qV j2 t
e o
o + e c
A = O
e e + oe c O
( )
t
e cos t u(t)
o
(
O `
(
)
0
S(t)
v a S N(t)
t
cA
= I A
c
I j 1
( )
0
j t t I 0 0
0 2 2
c 0 0
m I j 1
S(t) v a S e e sin t
qV j2
e o
o + e
A = I O
e e + oe O
( )
t
t (t)
o
(
O
( )
t
e cos t u(t)
o
(
O
(
PermanentRegime
0 I
0 2 2 t
I m
S(t) v a S
qV j2
A = I
e e +
0
j t
e
e
oe
0
2
j t
0 c
p I 2 2
I
m e
qV j2
e
e
= t
e e + oe
2
v a
S
I
e
c 0
qV j2 e e +
0
oe
c 0 0
qV j2 e e + oe
21MARCH 2011
c 0
p
S e
t
GCO
ResponsetoaSinusoidalSignalinPermanentRegime ResponsetoaSinusoidalSignalinPermanentRegime p g g p g g
StaticRelations ( )
p
th
S I I
qV
t
= ( )
0
j t
0 I
I(t) I 1 m e u t
e
(
+

Carriers Carriers
j t
I j m e (
th
N N =
r
th th
N I
qV
t
=
0
N
j t
0 0 I
th 2 2
th r c 0 0
m
I j m
N(t) N 1 e
I j2
e
e (
= +
(
t e e + oe
(

_

9
12
0
r
1
2 v a S
a S
o + I
t
I
Photons Photons
e
c
12
2 0
c
p
v a S I
e
t
( )
p
0 0 th
S I I
qV
t
=
0
2
j t
0 c
0 I 2 2
0 th c 0 0
I
S(t) S 1 m e
I I j2
e
( e
= +
(
e e + oe
(
(

21MARCH 2011
S
m
(
(

_

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