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  • NPN Silicon Transistor

    Încărcat de

    sarantapodarusa4009
    7 vizualizări1 pagină
    This document provides specifications for an NPN silicon transistor including its electrical characteristics, parameters, and classifications. Key details include: - Maximum power dissipation of 0.4W at 25°C ambient temperature and collector current of 0.1A. - Breakdown voltages of 50V for collector-base, 45V for collector-emitter, and 5V for emitter-base. - Cut-off currents below 0.1A and DC current gain of 1000 typical. - Transition frequency of 150MHz and saturation voltages of 0.3V for collector-emitter and 1V for base-emitter at a collector current of 100mA.

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    Datasheet

    Titlu original

    9014

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    This document provides specifications for an NPN silicon transistor including its electrical characteristics, parameters, and classifications. Key details include: - Maximum power dissipation of 0.4W at 25°C ambient temperature and collector current of 0.1A. - Breakdown voltages of 50V for collector-base, 45V for collector-emitter, and 5V for emitter-base. - Cut-off currents below 0.1A and DC current gain of 1000 typical. - Transition frequency of 150MHz and saturation voltages of 0.3V for collector-emitter and 1V for base-emitter at a collector current of 100mA.

    Drepturi de autor:

    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
    Indicator pentru conținut neadecvat
    7 vizualizări1 pagină

    NPN Silicon Transistor

    Încărcat de

    sarantapodarusa4009
    This document provides specifications for an NPN silicon transistor including its electrical characteristics, parameters, and classifications. Key details include: - Maximum power dissipation of 0.4W at 25°C ambient temperature and collector current of 0.1A. - Breakdown voltages of 50V for collector-base, 45V for collector-emitter, and 5V for emitter-base. - Cut-off currents below 0.1A and DC current gain of 1000 typical. - Transition frequency of 150MHz and saturation voltages of 0.3V for collector-emitter and 1V for base-emitter at a collector current of 100mA.

    Drepturi de autor:

    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    din 1

    9014

    NPN SILICON TRANSISTOR

    TO

    92

    FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50
    1.EMITTER

    2.BASE

    3.COLLECTOR

    1 2 3

    ELECTRICAL CHARACTERISTICS
    Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage

    Tamb=25
    Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE
    1

    unless otherwise specified


    Test Ic= 100 Ic= 0. 1 IE= 100 VCB=50 VCE=35 VEB= VCE= 3 5 conditions A mA A V, V, V V, IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 1mA IB= 5 mA IB= 5mA IC= 10mA 150 MHz 60 MIN 50 45 5 0.1 0.1 0.1 1000 0.3 1 V V TYP MAX UNIT V V V A A A

    VCE(sat) VBE(sat)

    IC= 100mA, IC= 100 mA, VCE= 5 V,

    Transition frequency

    fT

    f =30MHz

    CLASSIFICATION OF HFE(1)
    Rank Range A 60-150 B 100-300 C 200-600 D 400-1000

    Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com

    Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com

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