Zowie Technology Corporation General Purpose Transistor

NPN Silicon
3 BASE 1 2 2 EMITTER COLLECTOR 3

BC847A,B,C

SOT-23

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C
(1)

Symbol TA=25 C
o

Max. 225 1.8 556 300 2.4 417 -55 to +150

Unit mW mW / oC
o

PD R JA

Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature
(2)

C/W

TA=25 C

PD R JA TJ,TSTG

mW mW / oC
o

C/W o C

DEVICE MARKING BC847A=1E; BC847B=1F; BC847C=1G ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
o

OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage ( IC=10mA ) Collector-Emitter Breakdowe Voltage ( IC=10 uA, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uA ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.

V(BR)CEO

45

Vdc

V(BR)CES

50

Vdc

V(BR)CBO V(BR)EBO

50 6.0

Vdc Vdc

ICBO

15 5.0

nAdc uAdc

REV. : 0

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Zowie Technology Corporation

o

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)

Characteristic Symbol Min. Typ. Max. Unit

ON CHARACTERISTICS
DC Current Gain ( IC= 10 uA, VCE= 5.0 V ) BC847A BC847B BC847C HFE BC847A BC847B BC847C 110 200 420 180 290 520 90 150 270 220 450 800

( IC= 2.0 mA, VCE= 5.0 V )

Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Voltage ( IC= 2.0 mA, VCE= 5.0V ) ( IC= 10 mA, VCE= 5.0V )

VCE(sat)

0.25 0.60

VBE(sat)

0.7 0.9

VBE(on)

580 -

660 -

700 770

mV

SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product ( IC= 10 mA, VCE= 5.0 V, f=100 MHZ ) Output Capacitance ( VCB= 10 V, f=1.0 MHZ ) Noise Figure ( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ) fT 100 MHZ

Cobo

4.5

pF

NF

10

dB

REV. : 0

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Zowie Technology Corporation

BC847A,B,C

hFE, NORMALIZED DC CURRENT GAIN

2.0 1.5
VCE = 10 V o TA= 25 C

1.0 0.9 0.8

TA= 25 C

1.0 0.8 0.6

V, VOLTAGE ( VOLTS )

VBE(SAT) @ IC/IB = 10

0.7
VBE(on) @ VCE = 10 V

0.6 0.5 0.4 0.3 0.2 0.1

VCE(SAT) @ IC/IB = 10

0.4 0.3

0.2 0.2

0 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

IC, COLLECTOR CURRENT ( mA )

IC, COLLECTOR CURRENT ( mA )

Figure 1. Normalized DC Current Gain

Figure 2. "Saturation" and "On" Voltage

VCE, COLLECTOR EMITTER VOLTAGE ( V )

TA= 25 C IC = 10 mA IC = 20 mA IC = 50 mA

TEMPERATURE COEFFICIENT (mV / C)

2.0
IC = 200 mA

1.0
-55 C to +125 C
o o

1.6

1.2

1.6

IC = 100 mA

1.2

2.0

0.8

2.4

0.4

2.8

0 0.02

0.1

1.0

10

20

VB,

0.2

1.0

10

100

IB, BASE CURRENT ( mA )

IC, COLLECTOR CURRENT ( mA )

Figure 3. Collector Saturation Region

Figure 4. Base-Emitter Temperature Coefficient

tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ)

10
TA= 25 C
o

400 300 200

VCE = 10 V o TA= 25 C

7.0

C, CAPACITANCE ( pF )

5.0

Cib

3.0
Cob

100 80 60 40 30 20 0.5 0.7

2.0

1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40

1.0

2.0

3.0

5.0 7.0

10

20

30

50

VR, REVERSE VOLTAGE ( VOLTS )

IC, COLLECTOR CURRENT ( mA )

Figure 5. Capacitances

Figure 6. Current-Gain-Bandwidth Product

REV. : 0

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BC847A,B,C

hFE, DC CURRENT GAIN (NORMALIZED)

1.0
TA= 25 C VCE = 5 V o TA= 25 C
o

0.8

2.0 1.0 0.5

V, VOLTAGE ( VOLTS )

VBE(SAT) @ IC/IB = 10

0.6
VBE @ VCE = 5.0 V

0.4

0.2
VCE(SAT) @ IC/IB = 10

0.2 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200

IC, COLLECTOR CURRENT ( mA )

IC, COLLECTOR CURRENT ( mA )

Figure 7. DC Current Gain

Figure 8. "On" Voltage

VCE, COLLECTOR EMITTER VOLTAGE ( V )

TA= 25 C IC = 200 mA IC = 100 mA

TEMPERATURE COEFFICIENT (mV / C)

2.0

-1.0
-55 C to +125 C
o o

1.6

-1.4

IC = 20 mA

IC = 10 mA

IC = 50 mA

1.2

-1.8
VB

for VBE

0.8

-2.2

0.4

-2.6

VB,

0 0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

-3.0 0.2

1.0

10

200

IB, BASE CURRENT ( mA )

IC, COLLECTOR CURRENT ( mA )

Figure 9. Collector Saturation Region

Figure 10. Base-Emitter Temperature Coefficient

REV. : 0

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