Design & Simulation of Single Electron XOR Gate

Simulation Tools: SECS Simulator

Diagram:

Simulation Result:
Potential Difference between nodes 3 and ground
0

-0.01

-0.01

-0.02

Potential Diference (Volt)

Potential Diference (Volt)

Potential Difference between nodes 2 and ground

-0.02
-0.03
-0.04
-0.05
-0.06
-0.07

-0.03
-0.04
-0.05
-0.06
-0.07
-0.08

-0.08

-0.09

-0.09
-0.1

-0.1
0

Input: V1

0.2

0.4
0.6
Time (sec)

0.8

1
x 10

-10

Input: V2

0.2

0.4
0.6
Time (sec)

0.8

1
x 10

-10

Current on junction 5 from node 0 to 6

1.8

x 10

-19

Charge at node 6

0.8
1.6

0.6

1.4

0.4
Current (A)

Charge (Cb)

1.2
1
0.8
0.6

0.2
0
-0.2

0.4

-0.4

0.2

-0.6

0.2

0.4
0.6
Time (sec)

0.8

1
x 10

-0.8

-10

-1

4
6
Time (sec)

Output of XOR gate: Charge on output Island

Current through Junction

x 10

-11