NTE3031

Phototransistor Detector
NPNSi, Visible & IR
Absolute Maximum Ratings: (T
A
= +25C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Device Dissipation, P
D
150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25C 1.43mW/C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55 to +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65 to +150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 3 min), T
L
+260C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector Dark Current I
D
V
CE
= 10V 100 nA
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 100A 30 V
EmitterCollector Breakdown Voltage V
(BR)ECO
I
E
= 100A 5 V
Saturation Voltage V
CE(sat)
I
C
= 0.4mA 0.2 V
Optical Characteristics
Light Current I
L
V
CE
= 5V, R
L
= 100, Note 1 1 mA
Photo Current Rise Time t
r
R
L
= 1000, V
CC
= 5V,
I
L
= 1mA (Peak)
6 s
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2875 K.
Note 2. Angular response is defined as the total included angle between the half sensitivity points
and assuming a point source.
.021
(0.53)
.208
(5.28)
.500
(12.7)
Min
.150 (3.81) Die
Seating Plane
.184 (4.67) Dia
.210 (5.33) Dia
.155 (3.94) Dia
Window on
Center Line
.018 (0.45) Dia Typ
.100 (2.54) Dia
.040 (1.02)
45
Collector Emitter
Base