PD -94000

IRF7328
HEXFET® Power MOSFET
● Trench Technology
VDSS RDS(on) max ID
● Ultra Low On-Resistance
● Dual P-Channel MOSFET -30V 21mΩ@VGS = -10V -8.0A
● Available in Tape & Reel 32mΩ@VGS = -4.5V -6.8A

Description
New trench HEXFET® Power MOSFETs from S1
1 8
D1
International Rectifier utilize advanced processing 2 7
G1 D1
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the S2
3 6
D2
ruggedized device design that HEXFET power 4 5
MOSFETs are well known for, provides the designer G2 D2

with an extremely efficient and reliable device for use SO-8

in battery and load management applications. T o p V ie w

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -6.4 A
IDM Pulsed Drain Current -32
PD @TA = 25°C Maximum Power Dissipationƒ 2.0 W
PD @TA = 70°C Maximum Power Dissipationƒ 1.3 W
Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance
Parameter Max. Units
RθJA Maximum Junction-to-Ambient ƒ 62.5 °C/W

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.018 ––– V/°C Reference to 25°C, ID = -1mA
––– 17 21 VGS = -10V, ID = -8.0A ‚
RDS(on) Static Drain-to-Source On-Resistance mΩ
––– 26.8 32 VGS = -4.5V, ID = -6.8A ‚
VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 12 ––– ––– S VDS = -10V, ID = -8.0A
––– ––– -15 VDS = -24V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Qg Total Gate Charge ––– 52 78 ID = -8.0A
Qgs Gate-to-Source Charge ––– 9.8 ––– nC VDS = -15V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.3 ––– VGS = -10V
td(on) Turn-On Delay Time ––– 13 20 VDD = -15V, VGS = -10.0V
tr Rise Time ––– 15 23 ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 198 297 RG = 6.0Ω
tf Fall Time ––– 98 147 RD = 15Ω ‚
Ciss Input Capacitance ––– 2675 ––– VGS = 0V
Coss Output Capacitance ––– 409 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 262 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -2.0

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -32
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V ‚
trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, I F = -2.0A
Qrr Reverse Recovery Charge ––– 36 54 nC di/dt = -100A/µs ‚

Notes:
 Repetitive rating; pulse width limited by ƒ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.

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100 100
VGS VGS
TOP -10.0V TOP -10.0V
-5.0V -5.0V
-ID, Drain-to-Source Current (A)

-ID, Drain-to-Source Current (A)

-4.5V -4.5V
-4.0V -4.0V
-3.5V -3.5V
-3.3V -3.3V
10 -3.0V 10 -3.0V
BOTTOM -2.7V BOTTOM -2.7V

-2.7V

1 1
-2.7V

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100

-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
ID = -8.0A
RDS(on) , Drain-to-Source On Resistance
-I D , Drain-to-Source Current (A)

1.5
10 TJ = 150 ° C
(Normalized)

1.0

TJ = 25 ° C
1
0.5

V DS = -15V
20µs PULSE WIDTH VGS = -10V
0.1 0.0
2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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4000 14
VGS = 0V, f = 1MHz ID = -8A
Ciss = Cgs + Cgd , Cds SHORTED
V DS =-24V

-VGS , Gate-to-Source Voltage (V)

Crss = Cgd 12
Coss = Cds + Cgd V DS =-15V
3000
C, Capacitance (pF)

Ciss 10

8
2000
6

4
1000
Coss
2
Crss
0 0
1 10 100 0 10 20 30 40 50 60
-VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

TJ = 150 ° C
-IID , Drain Current (A)

10 100

TJ = 25 ° C

100us
1 10

1ms

TC = 25 °C
TJ = 150 °C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100
-VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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10.0
RD
VDS

8.0 VGS
D.U.T.
-ID , Drain Current (A)

RG -
+ VDD
6.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0

Fig 10a. Switching Time Test Circuit

2.0
td(on) tr t d(off) tf
VGS
0.0 10%
25 50 75 100 125 150
TC , Case Temperature ( ° C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

1000
Thermal Response (Z thJA )

100

D = 0.50

0.20
10
0.10
0.05 PDM

0.02 t1
1 0.01
t2
SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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0.060 0.100

RDS ( on ) , Drain-to-Source On Resistance (Ω )

RDS(on), Drain-to -Source On Resistance Ω)
(

0.050

0.075
0.040

0.030 ID = -8.0A 0.050

VGS = -4.5V
0.020

0.025 VGS = -10V

0.010

0.000
0.000
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
0 10 20 30 40 50 60 70
-VGS, Gate -to -Source Voltage (V) -ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs. Fig 13. Typical On-Resistance Vs.
Gate Voltage Drain Current

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF
-
10 V D.U.T. +VDS
QGS QGD
VGS

-3mA
VG
IG ID
Current Sampling Resistors

Charge

Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit

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SO-8 Package Details

IN C H E S M IL LIM E T E R S
D D IM
5
M IN MAX M IN M AX
-B -
A .0532 .0688 1 .35 1 .75
A1 .0040 .0098 0 .10 0 .25
8 7 6 5
5 B .014 .018 0 .36 0 .46
E H
-A - 0.2 5 (.0 10 ) M A M C .0 075 .0 098 0 .19 0.25
1 2 3 4
D .1 89 .1 96 4 .80 4.98
E .150 .157 3 .81 3 .99
e e .050 B A S IC 1.2 7 B A S IC
6X θ K x 45 °
e1 e1 .025 B A S IC 0.6 35 B A S IC
θ
H .2 284 .2 440 5 .80 6.20
A
K .011 .019 0 .28 0 .48
-C- 0 .10 (.00 4) L 6 C
A1 L 0 .16 .050 0 .41 1.27
B 8X 8X 8X
θ 0° 8° 0° 8°
0 .25 (.01 0) M C A S B S
R E CO M M E ND E D F O O TP R IN T
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 0 .72 (.02 8 )
8X
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
6 .46 ( .25 5 ) 1 .78 (.07 0)
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S 8X
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
1.27 ( .0 50 )
3X

Part Marking

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Tape and Reel
T E R M IN A L N U M B E R 1

1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )

8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 ) F E E D D IR E C T IO N

N O TES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

3 3 0 .0 0
(1 2 .9 9 2 )
MAX.

1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
N O TE S :
1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .

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Data and specifications subject to change without notice. 10/00
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