Si9945AEY

Vishay Siliconix
Document Number: 70758
S-57253Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-1
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
60
0.080 @ V
GS
= 10 V "3.7
60
0.100 @ V
GS
= 4.5 V "3.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
D
2
G
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
= 175_C)
a
T
A
= 25_C
I
D
"3.7
A
Continuous Drain Current (T
J
= 175_C)
a
T
A
= 70_C
I
D
"3.2
A
Pulsed Drain Current I
DM
25
A
Continuous Source Current (Diode Conduction)
a
I
S
2
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.4
W Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.7
W
Operating Junction and Storage Temperature Range T
J
, T
stg
55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ Max Unit
Junction-to-Ambienta
t v 10 sec
R
thJA
62.5
_C/W Junction-to-Ambienta
Steady State
R
thJA
93
_C/W
Notes
a. Surface Mounted on 1 x 1 FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si9945AEY
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70758
S-57253Rev. C, 24-Feb-98
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA 1.0 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V 1
mA Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C 10
mA
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 3.7 A 0.06 0.080
W Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.4 A 0.075 0.100
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.7 A 11 S
Diode Forward Voltage
a
V
SD
I
S
= 2.0 A, V
GS
= 0 V 1.2 V
Dynamic
b

Total Gate Charge Q
g
V 30 V V 10 V I 3 7 A
11 20
C Gate-Source Charge Q
gs
V
DS
= 30 V, V
GS
= 10 V, I
D
= 3.7 A 2 nC
Gate-Drain Charge Q
gd
2
Turn-On Delay Time t
d(on)
V 30 V R 30 W
9 20
Rise Time t
r
V
DD
= 30 V, R
L
= 30 W
I 1 A V 10 V R 6 W
10 20
Turn-Off Delay Time t
d(off)
DD
,
L
I
D
^ 1 A, V
GEN
= 10 V, R
G
= 6 W
21 40 ns
Fall Time t
f
8 20
Source-Drain Reverse Recovery Time t
rr
I
F
= 2.0 A, di/dt = 100 A/ms 45 80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Si9945AEY
Vishay Siliconix
Document Number: 70758
S-57253Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
0 1 2 3 4 5 6
0
5
10
15
20
25
0 1 2 3 4 5
Output Characteristics Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
V
GS
Gate-to-Source Voltage (V)

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D

G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
V
G
S

O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (_C)
(
N
o
r
m
a
l
i
z
e
d
)

O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
0
2
4
6
8
10
0 2 4 6 8 10
0
0.4
0.8
1.2
1.6
2.0
2.4
50 25 0 25 50 75 100 125 150 175
0
0.04
0.08
0.12
0.16
0.20
0 5 10 15 20 25
25_C
150_C
V
GS
= 10 V
C
rss
C
oss
3 V
V
GS
= 4.5 V
T
C
= 55_C
V
DS
= 30 V
I
D
= 3.7 A
V
GS
= 10 V
I
D
= 3.7 A
V
GS
= 10 through 5 V
4 V
0
200
400
600
800
0 10 20 30 40 50 60
C
iss
Si9945AEY
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70758
S-57253Rev. C, 24-Feb-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0 0.3 0.6 0.9 1.2 1.5
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
V
SD
Source-to-Drain Voltage (V) V
GS
Gate-to-Source Voltage (V)

S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
I
S
T
J
Temperature (_C) Time (sec)
P
o
w
e
r


(
W
)
0
0.04
0.08
0.12
0.16
0.20
0 2 4 6 8 10
0.9
0.6
0.3
0.0
0.3
0.6
50 25 0 25 50 75 100 125 150 175
T
J
= 175_C
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1 10 10
+3
I
D
= 3.7 A
I
D
= 250 mA
0
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93_C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
V
a
r
i
a
n
c
e

(
V
)
V
G
S
(
t
h
)
T
J
= 25_C
30
60
90
120
0.001 0.01 0.1 1 10 100 1000
10
+2
1
10
30
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