Orals99s Mohan

Modeling, Design and Optimization
of On-Chip Inductors and Transformers

Sunderarajan S. Mohan
Center for Integrated Systems

Stanford University
S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University
THE GOAL
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Simple, Accurate Expressions for Inductance

OUTLINE
Background
Current Sheet Approach
Accurate Inductance Expressions
Optimization of Inductor Circuits
Transformer Modeling
Contributions
ON-CHIP INDUCTORS AND TRANSFORMERS
Essential for radio frequency integrated circuits (RFICs)

Narrowband circuits
{ Low noise amplifiers, oscillators, filters,
matching networks, baluns
Broadband circuits
{ Shunt-peaking to enhance bandwidth
ON-CHIP INDUCTOR OPTIONS
Attribute
Bond wire
Inductance
0.5 4nH 0.2 100nH

30 60
< 10
CBondpad Rs , Cox , Csi , Rsi
Q
Parasitics
Fluctuations
Large
Planar Spiral
Small
LATERAL PARAMETERS
w
dout
din
din
dout
s
Square
Hexagonal
s
din
dout
Octagonal
din
dout
Circular
LATERAL PARAMETERS
1. Shape: square, hexagonal, octagonal, . . .
2. Number of turns, n
3. Conductor width, w
4. Conductor spacing, s
d
5. dout , din , davg = 0.5(dout +din ), or = dout +din

out
in
VERTICAL PARAMETERS
w
dout
din
tM
tox,M1M2
tM,u
tox
underpass
contact
oxide
substrate
MODELING APPROACHES
3-D field solvers

Segmented models
Lumped, Scalable models
3-D FIELD SOLVERS

General Purpose Tools
{ Solve Maxwells equations numerically
{ Accurate, but slow and memory intensive
{ Examples: Maxwell, MagNet
Custom Tools for Spiral Inductors and Transformers

{ Electrostatic and Magnetostatic approximations
{ Good for verification, but inconvenient for circuit design and synthesis
{ Examples: ASITIC, SPIRAL
SEGMENTED MODELS
LUMPED, SCALABLE MODELS

Cs
port 1
Rs
L
Cox
Rsi
port 2
Cox
Csi
Csi
Rsi
substrate
Simple expressions for Rs , Cox and Cs

NEED simple, accurate expression for inductance!
Limitations:
{ Magnetic coupling to substrate NOT modeled

{ Lumped approximation not valid beyond self-resonant frequency
GREENHOUSE APPROACH
Find self inductance of, and mutual inductance between
every segment of spiral:
Mgen,i,j
L1
M1,2
. . . M1,(n1)
M1,n
M1,2
L
.
.
.
M
M
2
2,n
2,(n1)
=
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M1,(n1) M2,(n1) . . . L(n1) Mn,(n1)
M1,n
M2,n
. . . Mn,(n1)
Ln
n
LT =
Li +
i=1
Mi,j
i=1 j=1,j=i
PREVIOUSLY REPORTED EXPRESSIONS
Voorman :
Dill :
Bryan :
Ronkanien :
Crols :
Lvoo
Ldil
Lbry
Lron
Lcro
=
=
=
=
=
103 n2 davg
8.5 104 n5/3 davg
2.41 103 n5/3 davg log(4/)
1.50 n2 e3.7(n1)(w+s)/dout
1.3 104 (d3out /w2 )a5/3 w1/4
Empirical expressions
Significant mean offset errors
Even when corrected, errors > 15 20%
DERIVATION OF ACCURATE EXPRESSIONS
Use equivalent current sheet to simplify problem:
Use GMD, AMD and AMSD to derive simple expression

GEOMETRIC MEAN DISTANCE (GMD)
For distances d1 and d2 :

GMD =
d1 d2
1
[ln(d1 ) + ln(d2 )]
ln(GMD) =
2
For n distances:
1
ln(GMD) = [ln(d1 ) + ln(d2 ) + ln(dn )]
n
GMD IN INDUCTANCE CALCULATIONS
Need to evaluate of GMD of conductor cross-section(s):

{ Self: GMD of conductor cross-section from itself
{ Mutual: GMD between two conductor cross-sections
Use continuous variable definition of GMD

{ Need integrals rather than sums
GMD introduced in to inductance calculations by

J. C. Maxwell
GMD IN INDUCTANCE CALCULATIONS
For cross sections in one dimension (current sheets):

l1 l2 ln(GMD) =
ln(r) dx dx
{ l1 and l2 are the lengths of the cross-sections

{
dx and dx are the elements of the cross-sections
r is the distance between the elements
GMD BETWEEN TWO LINES

w
x1
w
(d x1 x2 )
x2
1
ln(GMD) =
w2
0.5w
0.5w
0.5w
0.5w
ln |d x1 x2 |dx1 dx2
w2
w4
ln(d)
...
2
4
12d
60d
Basis for mutual inductance calculations in
Greenhouse method
GMD, AMD AND AMSD OF A LINE

w
2
w
2
x1
1
ln(GMD) =
w2
1
AMD =
w2
AMSD2
1
=
w2
0.5w
x2
0.5w
0.5w
0.5w
0.5w
0.5w
0.5w
0.5w
0.5w
ln |x1 + x2 |dx1 dx2 = ln(w) 1.5
w
|x1 + x2 |dx1 dx2 =
3
0.5w
0.5w
2
w
|x1 + x2 |2 dx1 dx2 =
6
0.5w
PARALLEL LINES OF EQUAL LENGTH
l
R R2
M
ln(2l) ln(R) 1 + 2
2
l
4l
for
R
l
INDUCTANCE OF CURRENT SHEET
R
l
l
R R2
M =
ln(2l) ln(R) 1 + 2
2
l
4l
Ls
l
AMD AMSD2
=
ln(2l) ln(GMD) 1 +
2
l
4l2
INDUCTANCE OF RECTANGULAR CURRENT SHEET

w
2
w
2
w
w
< x 1 , x2 <
2
2
ln (GMD) = ln |x1 + x2 | = ln w 1.5

w
AMD = |x1 + x2 | =
3
2
w
AMSD2 = (x1 + x2 )2 =
6
l
ln
L=
2
2l
w
w
w2
+ 0.5 +
3l 24l2
x1 x2
EQUIVALENT RECTANGULAR CURRENT SHEET

1
(n1)
...
I
w s w
w s w
n2 l
2
L=
ln
2
nI
l = nw + (n 1)s
2

+ 0.5 +
3 24
APPROXIMATING A SQUARE SPIRAL

dout = (1 + )davg
w
davg
nI
s
davg
ONE SIDE OF A SQUARE SPIRAL:
Ls
1
2
(n1)
davg
...
I
wsw
davg
nI
wsw
davg = nw + (n 1)s
OPPOSITE SIDES OF A SQUARE SPIRAL:
Mopp
davg
nI
davg
davg
90o
90o
nI
davg
CURRENT SHEET EXPRESSION FOR A SQUARE SPIRAL

davg
nI
davg
90o
nI
90o
nI
Lsq = 4(Ls + Mopp )
2.067
2n2 davg
ln
=
nI
davg
+ 0.178 + 0.1252
CONCENTRIC CIRCULAR CONDUCTORS

I
I
I
1
2 ... n
davg = nw+(n1)s
w
w w
n2 davg
1
L
ln
2
+ 0.9 + 0.22
nI
CURRENT SHEET EXPRESSIONS
Lcursh
n2 davg c1
2
=
ln(c2 /) + c3 + c4
2
Layout
c1
c2
c3
c4
Square
1.27
2.07
0.18
0.13
Hexagonal
1.09
2.23
0.00
0.17
Octagonal
1.07
2.29
0.00
0.19
Circle
1.00
2.46
0.00
0.20
OTHER INDUCTANCE EXPRESSIONS
Monomial Expression :
Lmon =
1
2 3 4 5
dout w davg n s
Modified Wheeler Expression :

Lmw
n2 davg
= K1 0
1 + K2
COMPARISON TO FIELD SOLVERS: PREVIOUS WORK
% Inductors exceeding abs. error
100
Crols
Voorman
Bryan
Ron
Dill
80
60
Min
L(nH)
OD(m)
n
s/w
40
Max
0.1
70
100 400
1
20
0.02
3
0.03 0.95
20
19, 000 simulations

0
20
60
40
% Absolute error
80
COMPARISON TO FIELD SOLVERS: NEW WORK
100
Current Sheet
Monomial Fit
Modified Wheeler
80
Min
L(nH)
OD(m)
n
s/w
60
40
Max
0.1
70
100 400
1
20
0.02
3
0.03 0.95
20
19, 000 simulations

0
6
8
% Absolute error
10
12
EXPERIMENTAL SET-UP
S parameters
HP8720B
network analyzer
Coplanar GSG probes
DUT
port 1
port 2
50 environment
COMPARISON TO EXPERIMENTS: PREVIOUS WORK
100
Crols
Voorman
Bryan
Ron
Dill
80
60
40
20
0
20
60
40
% Absolute error
80
COMPARISON TO EXPERIMENTS: NEW WORK
100
ASITIC
Current Sheet
Modified Wheeler
Monomial Fit
80
60
40
20
0
8
12
% Absolute error
16
20
PARAMETERS OF INTEREST
Inductor quality factor (QL )
QL = 2
[peak magnetic energy peak electric energy]

energy loss in one oscillation cycle
Tank quality factor (Qtank )

Qtank = 2
peak magnetic energy

energy loss in one oscillation cycle
Self-resonance frequency (res ), frequency at which QL = 0

EXAMPLE: MAXIMUM QL @ 2GHz FOR L
= 8nH
6
5
QL
4
3
Square
Hexagonal
Octagonal
Circular
2
1
0
2
3
Frequency (GHz)
EXAMPLE: SHUNT-PEAKED AMPLIFIER

Common Source Amplifier
Shunt-peaked Amplifier
Vdd
Vdd
L
R
vin
vout
C
vin
vout
C
Bandwidth enhancement using zeros

No additional power dissipation
ON-CHIP SHUNT PEAKING

Vdd
Work with inductor parasitics

L
Rs is not an issue
CL
(now part of load resistance)
Rs
Inductor Q is not relevant
(R Rs )
Minimize area and CL
vout
vin
Cd
Cg
Cload
L determined by
R, Cload , CL and Cd
SHUNT-PEAKED TRANSIMPEDANCE AMPLIFIER

Vdd
L
CL
Input current drive
Rs
Cascode stage
(R Rs )
vout
Cd
Rf
iin
Cin
Cload
On-chip shunt-peaking
Feedback
Cg
DESIGN METHODOLOGY
1. Design and optimize transimpedance stage
without shunt peaking
2. Transistor current determines conductor width, w
3. Lithography sets spacing, s
4. Choose n and AD to realize desired L
while minimizing parasitic capacitance and area
5. Maximize transimpedance resistance, Rf
TRANSFORMER
+
v1
+
M
i1
v2
L1
i2
L2
v1 = L1 it1 + M it2
v2 = L2 it2 + M it1
Mutual coupling coefficient, k =
M
L1 L2
|k| 1
NON-IDEAL TRANSFORMER
L1
R1
k=
M
L1 L2
L2
M
R2
< 1.
Series resistance.
Port-to-port & port-to-substrate capacitances
TAPPED TRANSFORMER
advantages:
{ High L1 , L2
{ Top metal layer
Inner
spiral
{ Low port-to-port
capacitance
disadvantages:
{ Asymmetric
Outer spiral
{ Low k(
0.3 0.5)
INTERLEAVED TRANSFORMER
advantages:
{ Medium k
( 0.7 0.8)
{ Symmetric
{ Top metal layer
disadvantages:
{ Medium port-to-port
capacitance
Primary
Secondary
{ Low L1 , L2
STACKED TRANSFORMER
Top View
advantages:
{ High k( 0.9)
{ High L1 , L2
{ Area efficient
disadvantages:
{ Multiple metal layers
Side View
top spiral
{ High port-to-port &

port-to-substrate
capacitances
bottom spiral
STACKED TRANSFORMER VARIATIONS

Bottom spiral
Top spiral
ys
xs
ds
xs
Shift top and bottom spirals laterally or diagonally

Trade-off lower k for reduced port-to-port capacitance
COMPARISON OF TRANSFORMER REALIZATIONS

Transformer
Area
type
Coupling
Self-
Self-resonant
coefficient, k
inductance
frequency
Tapped
High
Low
Mid
High
Interleaved
High
Mid
Low
High
Stacked
Low
High
High
Low
Non-idealities result in trade-offs

Optimal choice determined by circuit application
Transformer models needed for comparison
TAPPED TRANSFORMER MODEL
Port1
Ls,i
(inner)
Rs,o
Cox,o
Cov,o
Ls,o
Ls,i
Rs,i
Port2
Cox,i
Ls,o (outer)
Evaluate Cov,o , Cox,o , Cox,i ,

Rs,o & Rs,i by extending
previous work
Use inductance expression for

Ls,o , Ls,i
Calculate M
MUTUAL INDUCTANCE CALCULATION

Single inductor.
Tapped transformer.
L1
(inner)
LT
L2 (outer)
Interleaved transformer.
LT = L1 + L2 + 2M
L1 (primary)
L2 (secondary)
STACKED TRANSFORMER MODEL

Port1
Rs,t
Cox,t
Ls,t
ys
xs
Cov
Ls,b
Coxm
Evaluate Cov , Cox,t , Coxm ,

Cox,b , Rs,t & Rs,b by extending
previous work
Rs,b
Port2
Cox,b
Use inductance
expression for Ls,t , Ls,b
Calculate M
CURRENT SHEET APPROACH FOR k
ys
ds
xs
ys
ds
xs
Reduce complexity by 4n2

Use symmetry
Derive simple expression using electromagnetic theory
Mutual Coupling Coefficient (k )
k FOR STACKED TRANSFORMERS

1.0
0.8
Ls,b
k (0.9 dnorm )
(for k > 0.2)
Ls,t
0.6
0.4
0.2
0.0
predicted k
measured k
0.2
ys
ds
xs
0.4
0.6
M =k
(Ls,t Ls,b )
xs 2 +ys 2
ds
dnorm = AD = AD
Metal and oxide thicknesses have only 2nd order effects on k
EXPERIMENTAL SET-UP
port 1
port 2
S parameters
L1
HP8720B
network analyzer
L2
port 3
Coplanar GSG probes

port 1
port 3
DUT
port 1
port 2
L1
L2
port 3
50 environment
port 2
EXPERIMENTAL VERIFICATION: TAPPED

1.0
0.5
S11
ODo = 290m,
no = 2.5
ODi = 190m,
ni = 4.25
w = 13m, s = 7m
-0.5
-1.0
0.8
1.0
S22
S21
1.2
1.6
2.0
Frequency (GHz)
2.4
0.5
0.0
-1.0
0.8
real(S11) meas
imag(S11) meas
real(S11) calc
imag(S11) calc
1.0
0.5
-0.5
0.0
real(S21) meas
imag(S21) meas
real(S21) calc
imag(S21) calc
1.2
1.6
2.0
Frequency (GHz)
0.0
-0.5
2.4
-1.0
0.8
real(S22) meas
imag(S22) meas
real(S22) calc
imag(S22) calc
1.2
1.6
2.0
Frequency (GHz)
2.4
EXPERIMENTAL VERIFICATION: STACKED 1

1.0
Stacked transformer with
0.5
S11
top spiral overlapping bottom one

OD = 180m, n = 11.75,
w = 3.2m, s = 2.1m
xs = 0m, ys = 0m,
ds = 0m
0.0
-0.5
-1.0
0.0
real(S11) meas
imag(S11) meas
real(S11) calc
imag(S11) calc
0.5
1.0
Frequency (GHz)
1.5
1.0
1.0
0.5
0.0
S22
S21
0.5
-0.5
-1.0
0.0
real(S21) meas
imag(S21) meas
real(S21) calc
imag(S21) calc
0.5
1.0
Frequency (GHz)
0.0
-0.5
1.5
-1.0
0.0
real(S22) meas
imag(S22) meas
real(S22) calc
imag(S22) calc
0.5
1.0
Frequency (GHz)
1.5
FUTURE WORK
Incorporate inductive coupling to substrate:

significant in CMOS epi processes
Improve expressions for the series resistance

to include proximity effects
Extend current sheet approach

to handle non-uniform current distributions
CONTRIBUTIONS
Current sheet approach to inductance calculation

Simple accurate expression for inductance of
sdquare, hexagonal, octagonal and circular spirals
Expressions for mutual inductance and

mutual coupling coefficient
On-chip transformer models

Basis for design and synthesis of
on-chip inductor and transformer circuits
Shunt-peaked amplifier with optimized on-chip inductor

SO WHAT ?
Design
{ Scalable, analytical models for
synthesis and optimization
Verification
{ Field solvers

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Modeling, Design and Optimization

of On-Chip Inductors and Transformers

Center for Integrated Systems

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

Simple, Accurate Expressions for Inductance

ON-CHIP INDUCTORS AND TRANSFORMERS

Essential for radio frequency integrated circuits (RFICs)

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

ON-CHIP INDUCTOR OPTIONS

0.5 4nH 0.2 100nH

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

5. dout , din , davg = 0.5(dout +din ), or = dout +din

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

3-D field solvers

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

3-D FIELD SOLVERS

Custom Tools for Spiral Inductors and Transformers

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

LUMPED, SCALABLE MODELS

Simple expressions for Rs , Cox and Cs

{ Magnetic coupling to substrate NOT modeled

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

PREVIOUSLY REPORTED EXPRESSIONS

DERIVATION OF ACCURATE EXPRESSIONS

Use equivalent current sheet to simplify problem:

Use GMD, AMD and AMSD to derive simple expression

GEOMETRIC MEAN DISTANCE (GMD)

For distances d1 and d2 :

GMD IN INDUCTANCE CALCULATIONS

Need to evaluate of GMD of conductor cross-section(s):

Use continuous variable definition of GMD

GMD introduced in to inductance calculations by

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

GMD IN INDUCTANCE CALCULATIONS

For cross sections in one dimension (current sheets):

{ l1 and l2 are the lengths of the cross-sections

dx and dx are the elements of the cross-sections

r is the distance between the elements

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

GMD BETWEEN TWO LINES

GMD, AMD AND AMSD OF A LINE

ln |x1 + x2 |dx1 dx2 = ln(w) 1.5

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

PARALLEL LINES OF EQUAL LENGTH

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

INDUCTANCE OF CURRENT SHEET

INDUCTANCE OF RECTANGULAR CURRENT SHEET

ln (GMD) = ln |x1 + x2 | = ln w 1.5

EQUIVALENT RECTANGULAR CURRENT SHEET

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

APPROXIMATING A SQUARE SPIRAL

ONE SIDE OF A SQUARE SPIRAL:

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

OPPOSITE SIDES OF A SQUARE SPIRAL:

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

CURRENT SHEET EXPRESSION FOR A SQUARE SPIRAL

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University

CONCENTRIC CIRCULAR CONDUCTORS

S. S. Mohan, PhD Oral Exam, June 9, 1999, CIS, Stanford University