1

Name: Matric No.:

ECE 1231

Quiz 1

1. Calculate the intrinsic carrier concentration in gallium arsenide and germanium at
T = 300K and K=8610
-6
. [GaAs: B=2.1010
14
, Eg=1.4; Ge: B=1.6610
15
,
Eg=0.66].


Solution:
3 6
6
2 / 3 14
10 8 . 1
) 300 )( 10 86 ( 2
4 . 1
exp ) 300 )( 10 1 . 2 ( :

= cm n GaAs
i


3 13
6
2 / 3 13
10 40 . 2
) 300 )( 10 86 ( 2
66 . 0
exp ) 300 )( 10 66 . 1 ( :

= cm n Ge
i


2. Calculate the concentration of electrons and holes in silicon and germanium
semiconductor sample that has a concentration of acceptor atoms equal to 10
16

cm
-3
. Mention the semiconductor is p-type or n-type?





3. Calculate the hole diffusion current density at x=0 cm, when considering silicon
at T=300K. Assume the hole concentration is given by p = 10
16
e
-x/Lp
(cm
-3
), where
Lp = 10
-3
cm and D
p
=10 cm
2
/s. [e=1.610
-19
].

2
3
16 19
16
/ 16
10
) 10 )( 10 )( 10 6 . 1 (
) exp( )
1
)( 10 (
cm A J
L
x
L
eD
dx
dp
eD J
p
p p
p p p
=

=

= =

2
4. The cut-in voltage of the diode shown in the circuit in Figure 4.1 is V

=0.7V. The
diode is to remain biased on for a power supply voltage in the range
5V
ps
10V. The minimum diode current is to be I
D
(min) =2 mA. The maximum
power dissipated in the diode is to be no more than 10 mW. Determine the values
of R
1
and R
2
.


Figure 4.1

Solution:










3
5. For a pn junction diode, what must be the forward-bias voltage to produce a
current of 150 A when I
S
= 10
-11
A.

Solution: