D

P1
(1) D
P2
(14)
G
P1
(2)
S
P1
(3) S
P2
(12)
V
+
(11)
G
P2
(13)
D
P3
(10) D
P4
(5)
G
P3
(9)
S
P3
(8) S
P4
(7)
~
V
-
(4)
V
+
(11)
G
P4
(6)
ALD1107
BLOCK DIAGRAM
GENERAL DESCRIPTION
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC operating environment. The ALD1107/ALD1117 are
builiding blocks for differential amplifier input stages, transmission gates,
multiplexer applications, current sources, current mirrors and other preci-
sion analog circuits.
APPLICATIONS
Precision current sources
Precision current mirrors
Voltage Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Precision analog signal processing
ADVANCED
LINEAR
DEVICES, INC.
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1107/ALD1117
FEATURES
Low threshold voltage of -0.7
Low input capacitance
Low VOS 2mV typical
High input impedance -- 10
14
typical
Low input and output leakage currents
Negative current (I
DS
) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10
9
Low input and output leakage currents
Operating Temperature Range*
-55C to +125C 0C to +70C 0C to +70C
8-Pin CERDIP 8-Pin Plastic Dip 8-Pin SOIC
Package Package Package
ALD1117 DA ALD1117PA ALD1117 SA
14-Pin CERDIP 14-Pin Plastic Dip 14-Pin SOIC
Package Package Package
ALD1107 DB ALD1107 PB ALD1107 SB
ORDERING INFORMATION
* Contact factory for industrial temperature range.
PIN CONFIGURATION
BLOCK DIAGRAM
D
P2
G
P2
S
P2
G
P3
S
P3
G
P1
S
P1
D
P4
G
P4
1
2
3
4
DB, PB, SB PACKAGE
5
6
7 8
9
10
11
12
13
14 D
P1
V
+
V
-
D
P3
S
P4
1
ALD1107
D
P1
(1) D
P2
(8) ~
G
P1
(2)
S
P1
(3) S
P2
(6)
V
-
(4)
V+

(5)
G
P2
(7)
ALD1117
D
P2
G
P2
S
P2
G
P1
S
P1
1
2
3
4
DA, PA, SA PACKAGE
5
6
7
8 D
P1
V
+ V
-
1
ALD1117
2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ALD1107/ALD1117 Advanced Linear Devices 2
Gate Threshold VT -0.4 -0.7 -1.0 -0.4 -0.7 -1.0 V IDS = -1.0A VGS = VDS
Voltage
Offset Voltage VOS 2 10 2 10 mV IDS = -10A VGS = VDS
VGS1-VGS2
Gate Threshold
Temperature TCVT -1.3 -1.3 mV/C
Drift
2
On Drain IDS (ON) -1.3 -2 -1.3 -2 mA VGS = VDS = -5V
Current
Transconductance GIS 0.25 0.67 0.25 0.67 mmho VDS = -5V IDS = -10mA
Mismatch Gfs 0.5 0.5 %
Output GOS 40 40 mho VDS = -5V IDS = -10mA
Conductance
Drain Source RDS (ON) 1200 1800 1200 1800 VDS = -0.1V VGS = -5V
On Resistance
Drain Source
On Resistance R
DS (ON)
0.5 0.5 % V
DS
= -0.1V V
GS
= -5V
Mismatch
Drain Source
Breakdown BV
DSS
-12 -12 V I
DS
= -1.0A V
GS
= 0V
Voltage
Off Drain I
DS (OFF)
10 400 10 400 pA V
DS
= -12V V
GS
= 0V
Current
1
4 4 nA T
A
= 125C
Gate Leakage I
GSS
0.1 10 0.1 10 pA V
DS
= 0V V
GS
= -12V
Current 1 1 nA T
A
= 125C
Input C
ISS
1 3 1 3 pF
Capacitance
2
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25C unless otherwise specified
ALD1107 ALD1117 Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS -13.2V
Gate-source voltage, V
GS
-13.2V
Power dissipation 500 mW
Operating temperature range PA, SA, PB, SB package 0C to +70C
DA, DB package -55C to +125C
Storage temperature range -65C to +150C
Lead temperature, 10 seconds +260C
ALD1107/ALD1117 Advanced Linear Devices 3
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE VOLTAGE (V)
D
R
A
I
N

S
O
U
R
C
E

C
U
R
R
E
N
T
(
m
A
)
-10
-7.5
-5.0
-2.5
0
V
BS
= 0V
T
A
= 25C
-10V
-8V
-6V
-4V
-2V
0 -8 -2 -6 -4 -10 -12
V
GS
= -12V
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
D
R
A
I
N

S
O
U
R
C
E

C
U
R
R
E
N
T
(

A
)
-320 -160 0 160 320
-500
500
250
0
-250
-4V
V
GS
= -12V
-6V
V
BS
= 0V
T
A
= 25C
-2V
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
GATE SOURCE VOLTAGE (V)
0 -0.8 -1.6 -2.4 -3.2 -4.0
-20
-15
-10
-5
0
D
R
A
I
N

S
O
U
R
C
E

C
U
R
R
E
N
T
(

A
)
V
BS
= 0V
4V
6V
8V
10V
12V
V
GS
= V
DS
T
A
= 25C
2V
-12
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
0 -8 -2 -6 -4 -10
F
O
R
W
A
R
D

T
R
A
N
S
C
O
N
D
U
C
T
A
N
C
E
(
m
m
h
o
)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
T
A
= +125C
T
A
= +25C
I
DS
= -1mA
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
D
R
A
I
N

S
O
U
R
C
E

O
N

R
E
S
I
S
T
A
N
C
E

(
K

)
100
10
1
0.1
-2 0 -4 -6 -8 -10 -12
V
DS
= 0.4V
V
BS
= 0V
T
A
= +125C
T
A
= +25C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (C)
O
F
F

D
R
A
I
N

S
O
U
R
C
E

C
U
R
R
E
N
T
(
p
A
)
-50 -25 +25 +50 +75 +125 +100 0
V
DS
= -12V
V
GS
= V
BS
= 0V
1
10
100
1000
ALD1107/ALD1117 Advanced Linear Devices 4
DIFFERENTIAL AMPLIFIER CURRENT SOURCE MULTIPLICATION
CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL
TYPICAL APPLICATIONS
I
SET
R
SET
Q
3
V
+
= +5V
I
SOURCE
Q
1
, Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
I
SOURCE
= I
SET

=
V
+
-Vt
R
SET
= 4
R
SET
~
Q
1
Q
2
V
+
= +5V
Q
4
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
V
+
PMOS PAIR
Q
4
V
IN
-
NMOS PAIR
Q
2
Q
1
V
IN
+
Current
Source
Q
3
Q
1
, Q
2
: N - Channel MOSFET
Q
3
, Q
4
: P - Channel MOSFET
V
OUT
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
Q
SET,
Q
1
..Q
N
: ALD1106 or ALD1116
N - Channel MOSFET
I
SET
V
+
= +5V
I
SOURCE
= I
SET
x N
R
SET
Q
2
Q
3 Q
SET
Q
1 Q
N
V
+
= +5V
Q
4
I
SOURCE R
SET
Q
1
Q
3
I
SET
ON
OFF
Digital Logic Control
of Current Source
Q
1
: N - Channel MOSFET
Q
3,
Q
4
: P - Channel MOSFET
1/2 ALD1107
or ALD1117
1/4 ALD1106
or 1/2 ALD1116
ALD1107/ALD1117 Advanced Linear Devices 5
CASCODE CURRENT SOURCES
BASIC CURRENT SOURCES
P- CHANNEL CURRENT SOURCE N- CHANNEL CURRENT SOURCE
TYPICAL APPLICATIONS
V
+
= +5V
I
SOURCE
QP
1
R
SET
I
SET
QP
1
, QP
2
: P - Channel MOSFET
I
SOURCE
V
+
= +5V
R
SET
I
SET
Q
1
8
Q
2
I
SOURCE
= I
SET


=
V
+
- Vt
R
SET
=
V
+
- 1.0
R
SET

Q
1,
Q
2
: N - Channel MOSFET
~
=
4
R
SET
~
1/2 ALD1106
or ALD1116
1/2 ALD1107
or ALD1117
QP
2
I
SET
V
+
= +5V
Q
1
Q
3
Q
2
Q
4
I
SOURCE
Q1, Q2, Q3, Q4: P - Channel MOSFET

I
SOURCE
= I
SET
=
V
+
- 2Vt
R
SET
=
3
R
SET
~
R
SET

I
SET
V
+
= +5V
Q
2
I
SOURCE
R
SET
Q
3
Q
1
Q
1
, Q
2
, Q
3
, Q
4
: N - Channel MOSFET

Q
4
ALD1106
ALD1107