Documente Academic
Documente Profesional
Documente Cultură
Oka Kurniawan
Er Ping Li
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A single nanowire has been used to power up nano-electronic circuit
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How does a coaxial nanowire work as a photovoltaic device?
p-type
intrinsic
n-type
EC e-
ħω
EF
EV
h+
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Why coaxial silicon nanowire is interesting for photovoltaic devices
• Less material
• Enhanced absorption
• Bandgap engineering
• Efficient extraction along axis
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To study a single coaxial Silicon nanowire for photovoltaic device
AM1.5G illumination
P-type radius = 50 nm
i-layer thickness = 30 nm
N-type thickness = 100 nm
Length = 1 µm
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Dark current-voltage characteristic
Ideality factor:
N = 1.07
Experiment,
N = 1.96
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Current voltage characteristic under AM 1.5G illumination
Power:
P = 230 pW P = 72 pW
Fill factor:
Ffill = 0.85 Ffill = 0.55
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Potential profile for both dark and under illumination
V = 0.0 V = 1.0
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Photogeneration rate as a function of axial distance
Generation rate:
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Effect of surface recombination velocity
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Summary
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Lateral confinement causes abrupt potential drop along axis
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Large radius nanowire will have largest built-in potential along axis
R = 150 nm
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Plot of recombination rate at the surface
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