1.

MOS: Device Operation and

Large Signal Model
ECE 102, Winter 2011, F. Najmabadi
Reading: Sedra & Smith Sec. 5.1-5.3
When a sufficiently large voltage v
GS
is applied (i.e., v
GS
> V
tn
) , an
inversion layer is formed under the gate electrode (like a capacitor)
Total charge in the channel is
If a small voltage is applied between Source and Drain, electrons
(because n-channel) will move from source to drain with a velocity:
Resulting in a current
When v
DS
is small, NMOS acts as a resistors
(value of resistor is controlled by V
ov
)
When v
DS
is increased, the channel becomes narrower near
the drain reducing the charge contained in the channel:
Resulting in a current
When v
DS
v
GS
- V
th,n
the channel is pinched off and the
current does not increase further with increasing v
DS
NMOS
PMOS
NMOS
PMOS
To Solve MOS Circuit:
(with Large Signal Model)
1. Hypothesis: assume one of the modes of operation for the
MOSFET
2. Solve: Use the equations for the selected mode to solve the
circuit
3. Check: at the end perform the check for the selected mode to
verify the hypothesis
4. Redo: if the hypothesis check fails, try another hypothesis and
start over