5.

3 (a) Looking into the base of Q

1
we see an equivalent resistance of r
1
, so we can draw the following
equivalent circuit for nding R
in
:
R
in
R
1
R
2
r
1
R
in
= R
1
+R
2
r
1
(b) Looking into the emitter of Q
1
we see an equivalent resistance of
1
gm1
r
1
, so we can draw the
following equivalent circuit for nding R
in
:
R
in
R
1
1
gm1
r
1
R
in
= R
1

1
g
m1
r
1
(c) Looking down from the emitter of Q
1
we see an equivalent resistance of
1
gm2
r
2
, so we can draw
the following equivalent circuit for nding R
in
:
R
in
Q
1
V
CC
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

(d) Looking into the base of Q

2
we see an equivalent resistance of r
2
, so we can draw the following
equivalent circuit for nding R
in
:
R
in
Q
1
V
CC
r
2
R
in
= r
1
+ (1 +
1
)r
2
5.4 (a) Looking into the collector of Q
1
we see an equivalent resistance of r
o1
, so we can draw the following
equivalent circuit for nding R
out
:
R
out
R
1
r
o1
R
out
= r
o1
R
1
(b) Lets draw the small-signal model and apply a test source at the output.
R
B
r
1
+
v
1

g
m1
v
1
r
o1

v
t
+
i
t
i
t
= g
m1
v
1
+
v
t
r
o1
v
1
= 0
i
t
=
v
t
r
o1
R
out
=
v
t
i
t
= r
o1
(c) Looking down from the emitter of Q
1
we see an equivalent resistance of
1
gm2
r
2
r
o2
, so we
can draw the following equivalent circuit for nding R
out
:
Q
1
R
out
1
gm2
r
2
r
o2
R
out
= r
o1
+ (1 + g
m1
r
o1
)

r
1

1
g
m2
r
2
r
o2

(d) Looking into the base of Q

2
we see an equivalent resistance of r
2
, so we can draw the following
equivalent circuit for nding R
out
:
Q
1
R
out
r
2
R
out
= r
o1
+ (1 + g
m1
r
o1
) (r
1
r
2
)
5.5 (a) Looking into the base of Q
1
we see an equivalent resistance of r
1
, so we can draw the following
equivalent circuit for nding R
in
:
R
in
R
1
R
2
r
1
R
in
= R
1
+ R
2
r
1
(b) Lets draw the small-signal model and apply a test source at the input.
r
1
+
v
1

v
t
+
i
t
g
m1
v
1
R
1
i
t
=
v
1
r
1
g
m1
v
1
v
1
= v
t
i
t
=
v
t
r
1
+ g
m1
v
t
i
t
= v
t

g
m1
+
1
r
1

R
in
=
v
t
i
t
=
1
g
m1
r
1
(c) From our analysis in part (b), we know that looking into the emitter we see a resistance of
1
gm2
r
2
. Thus, we can draw the following equivalent circuit for nding R
in
:
R
in
Q
1
V
CC
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

(d) Looking up from the emitter of Q

1
we see an equivalent resistance of
1
gm2
r
2
, so we can draw
the following equivalent circuit for nding R
in
:
R
in
Q
1
1
gm2
r
2
V
CC
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

(e) We know that looking into the base of Q

2
we see R
in
= r
2
if the emitter is grounded. Thus,
transistor Q
1
does not aect the input impedance of this circuit.
5.6 (a) Looking into the collector of Q
1
we see an equivalent resistance of r
o1
, so we can draw the following
equivalent circuit for nding R
out
:
R
out
R
C
r
o1
R
out
= R
C
r
o1
(b) Looking into the emitter of Q
2
we see an equivalent resistance of
1
gm2
r
2
r
o2
, so we can draw
the following equivalent circuit for nding R
out
:
Q
1
R
out
R
E
=
1
gm2
r
2
r
o2
R
out
= r
o1
+ (1 + g
m1
r
o1
)

r
1

1
g
m2
r
2
r
o2

5.7 (a)
V
CC
I
B
(100 k) = V
BE
= V
T
ln(I
C
/I
S
)
V
CC

1

I
C
(100 k) = V
T
ln(I
C
/I
S
)
I
C
= 1.754 mA
V
BE
= V
T
ln(I
C
/I
S
) = 746 mV
V
CE
= V
CC
I
C
(500 ) = 1.62 V
Q
1
is operating in forward active.
(b)
I
E1
= I
E2
V
BE1
= V
BE2
V
CC
I
B1
(100 k) = 2V
BE1
V
CC

1

I
C1
(100 k) = 2V
T
ln(I
C1
/I
S
)
I
C1
= I
C2
= 1.035 mA
V
BE1
= V
BE2
= 733 mV
V
CE2
= V
BE2
= 733 mV
V
CE1
= V
CC
I
C
(1 k) V
CE2
= 733 mV
Both Q
1
and Q
2
are at the edge of saturation.
(c)
V
CC
I
B
(100 k) = V
BE
+ 0.5 V
V
CC

1

I
C
(100 k) = V
T
ln(I
C
/I
S
) + 0.5 V
I
C
= 1.262 mA
V
BE
= 738 mV
V
CE
= V
CC
I
C
(1 k) 0.5 V
= 738 mV
Q
1
is operating at the edge of saturation.
5.8 See Problem 7 for the derivation of I
C
for each part of this problem.
(a)
I
C1
= 1.754 mA
g
m1
= I
C1
/V
T
= 67.5 mS
r
1
= /g
m1
= 1.482 k
100 k
r
1
+
v
1

g
m1
v
1
500
(b)
I
C1
= I
C2
= 1.034 mA
g
m1
= g
m2
= I
C1
/V
T
= 39.8 mS
r
1
= r
2
= /g
m1
= 2.515 k
100 k
r
1
+
v
1

g
m1
v
1
1 k
r
2
+
v
2

g
m2
v
2
(c)
I
C1
= 1.26 mA
g
m1
= I
C1
/V
T
= 48.5 mS
r
1
= /g
m1
= 2.063 k
100 k
r
1
+
v
1

g
m1
v
1
1 k
5.9 (a)
V
CC
V
BE
34 k

V
BE
16 k
= I
B
=
I
C

I
C
=
V
CC
V
T
ln(I
C
/I
S
)
34 k

V
T
ln(I
C
/I
S
)
16 k
I
C
= 677 A
V
BE
= 726 mV
V
CE
= V
CC
I
C
(3 k) = 468 mV
Q
1
is in soft saturation.
(b)
I
E1
= I
E2
I
C1
= I
C2
V
BE1
= V
BE2
= V
BE
V
CC
2V
BE
9 k

2V
BE
16 k
= I
B1
=
I
C1

I
C1
=
V
CC
2V
T
ln(I
C1
/I
S
)
9 k

2V
T
ln(I
C1
/I
S
)
16 k
I
C1
= I
C2
= 1.72 mA
V
BE1
= V
BE2
= V
CE2
= 751 mV
V
CE1
= V
CC
I
C1
(500 ) V
CE2
= 890 mV
Q
1
is in forward active and Q
2
is on the edge of saturation.
(c)
V
CC
V
BE
0.5 V
12 k

V
BE
+ 0.5 V
13 k
= I
B
=
I
C

I
C
=
V
CC
V
T
ln(I
C
/I
S
) 0.5 V
12 k

V
T
ln(I
C
/I
S
) + 0.5 V
13 k
I
C
= 1.01 mA
V
BE
= 737 mV
V
CE
= V
CC
I
C
(1 k) 0.5 V = 987 mV
Q
1
is in forward active.
5.10 See Problem 9 for the derivation of I
C
for each part of this problem.
(a)
I
C
= 677 A
g
m
= I
C
/V
T
= 26.0 mS
r

= /g
m
= 3.84 k
(34 k) (16 k) r

+
v

g
m
v

3 k
(b)
I
C1
= I
C2
= 1.72 mA
g
m1
= g
m2
= I
C1
/V
T
= 66.2 mS
r
1
= r
2
= /g
m1
= 1.51 k
(9 k) (16 k) r
1
+
v
1

g
m1
v
1
500
g
m2
v
2
r
2

v
2
+
(c)
I
C
= 1.01 mA
g
m
= I
C
/V
T
= 38.8 mS
r

= /g
m
= 2.57 k
(12 k) (13 k) r

+
v

g
m
v

1 k
5.11 (a)
V
CE
V
BE
(in order to guarantee operation in the active mode)
V
CC
I
C
(2 k) V
BE
V
CC
I
C
(2 k) V
T
ln(I
C
/I
S
)
I
C
886 A
V
CC
V
BE
R
B

V
BE
3 k
= I
B
=
I
C

V
CC
V
T
ln(I
C
/I
S
)
R
B

V
T
ln(I
C
/I
S
)
3 k
=
I
C

R
B

I
C

+
V
T
ln(I
C
/I
S
)
3 k

= V
CC
V
T
ln(I
C
/I
S
)
R
B
=
V
CC
V
T
ln(I
C
/I
S
)
IC

+
VT ln(IC/IS)
3 k
R
B
7.04 k
(b)
V
CC
V
BE
R
B

V
BE
3 k
= I
B
=
I
C

I
C
=
V
CC
V
T
ln(I
C
/I
S
)
R
B

V
T
ln(I
C
/I
S
)
3 k
I
C
= 1.14 mA
V
BE
= 735 mV
V
CE
= V
CC
I
C
(2 k) = 215 mV
V
BC
= V
BE
V
CE
= 520 mV
5.13 We know the input resistance is R
in
= R
1
R
2
r

. Since we want the minimum values of R

1
and
R
2
such that R
in
> 10 k, we should pick the maximum value allowable for r

, which means picking

the minimum value allowable for g
m
(since r

1/g
m
), which is g
m
= 1/260 S.
g
m
=
1
260
S
I
C
= g
m
V
T
= 100 A
V
BE
= V
T
ln(I
C
/I
S
) = 760 mV
I
B
=
I
C

= 1 A
V
CC
V
BE
R
1

V
BE
R
2
= I
B
R
1
=
V
CC
V
BE
I
B
+
VBE
R2
r

=

g
m
= 26 k
R
in
= R
1
R
2
r

V
CC
V
BE
I
B
+
VBE
R2

R
2
r

> 10 k
R
2
> 23.57 k
R
1
> 52.32 k
5.14
g
m
=
I
C
V
T

1
26
S
r

=

g
m
= 2.6 k
R
in
= R
1
R
2
r

According to the above analysis, R

in
cannot be greater than 2.6 k. This means that the requirement
that R
in
10 k cannot be met. Qualitatively, the requirement for g
m
to be large forces r

to be
small, and since R
in
is bounded by r

, it puts an upper bound on R

in
that, in this case, is below the
required 10 k.
5.15
R
out
= R
C
= R
0
A
v
= g
m
R
C
= g
m
R
0
=
I
C
V
T
R
0
= A
0
I
C
=
A
0
R
0
V
T
r

=
V
T
I
C
=
R
0
A
0
V
BE
= V
T
ln(I
C
/I
S
) = V
T
ln

A
0
V
T
R
0
I
S

V
CC
V
BE
R
1

V
BE
R
2
= I
B
=
I
C

R
1
=
V
CC
V
BE
IC

+
VBE
R2
R
in
= R
1
R
2
r

V
CC
V
T
ln

A0VT
R0IS

IC

+
VT
R2
ln

A0VT
R0IS

R
2

R
0
A
0
In order to maximize R
in
, we can let R
2
. This gives us
R
in,max
=

V
CC
V
T
ln

A0VT
R0IS

I
C

R
0
A
0
5.16 (a)
I
C
= 0.25 mA
V
BE
= 696 mV
V
CC
V
BE
I
E
R
E
R
1

V
BE
+ I
E
R
E
R
2
= I
B
=
I
C

R
1
=
V
CC
V
BE

1+

I
C
R
E
IC

+
VBE+
1+

ICRE
R2
= 22.74 k
(b) First, consider a 5 % increase in R
E
.
R
E
= 210
V
CC
V
BE
I
E
R
E
R
1

V
BE
+ I
E
R
E
R
2
= I
B
=
I
C

V
CC
V
T
ln(I
C
/I
S
)
1+

I
C
R
E
R
1

V
T
ln(I
C
/I
S
) +
1+

I
C
R
E
R
2
= I
B
=
I
C

I
C
= 243 A
I
C
I
C,nom
I
C,nom
100 = 2.6 %
Now, consider a 5 % decrease in R
E
.
R
E
= 190
I
C
= 257 A
I
C
I
C,nom
I
C,nom
100 = +2.8 %
5.17
V
CE
V
BE
(in order to guarantee operation in the active mode)
V
CC
I
C
R
C
V
T
ln(I
C
/I
S
)
I
C
833 A
V
CC
V
BE
I
E
R
E
30 k

V
BE
+ I
E
R
E
R
2
= I
B
=
I
C

R
2
=
V
BE
+ I
E
R
E
VCCVBEIERE
30 k

IC

=
V
T
ln(I
C
/I
S
) +
1+

I
C
R
E
VCCVT ln(IC/IS)
1+

ICRE
30 k

IC

R
2
20.66 k
5.18 (a) First, note that V
BE1
= V
BE2
= V
BE
, but since I
S1
= 2I
S2
, I
C1
= 2I
C2
. Also note that

1
=
2
= = 100.
I
B1
=
I
C1

=
V
CC
V
BE
(I
E1
+ I
E2
)R
E
R
1

V
BE
+ (I
E1
+ I
E2
)R
E
R
2
I
C1
=
V
CC
V
T
ln(I
C1
/I
S1
)
3
2
1+

I
C1
R
E
R
1

V
T
ln(I
C1
/I
S1
) +
3
2
1+

I
C1
R
E
R
2
I
C1
= 707 A
I
C2
=
I
C1
2
= 354 A
(b) The small-signal model is shown below.
R
1
R
2
r
1
+
v
1

r
2
+
v
2

g
m1
v
1
R
C
g
m2
v
2
R
E
We can simplify the small-signal model as follows:
R
1
R
2
r
1
r
2
+
v

g
m1
v

R
C
g
m2
v
2
R
E
g
m1
= I
C1
/V
T
= 27.2 mS
r
1
=
1
/g
m1
= 3.677 k
g
m2
= I
C2
/V
T
= 13.6 mS
r
2
=
2
/g
m2
= 7.355 k
5.19 (a)
I
E1
= I
E2
V
BE1
= V
BE2
V
CC
2V
BE1
9 k

2V
BE1
16 k
= I
B1
=
I
C1

1
I
C1
=
1
V
CC
2V
T
ln(I
C1
/I
S1
)
9 k

1
2V
T
ln(I
C1
/I
S1
)
16 k
I
C1
= I
C2
= 1.588 mA
V
BE1
= V
BE2
= V
T
ln(I
C1
/I
S1
) = 754 mV
V
CE2
= V
BE2
= 754 mV
V
CE1
= V
CC
I
C1
(100 ) V
CE2
= 1.587 V
(b) The small-signal model is shown below.
(9 k) (16 k) r
1
+
v
1

g
m1
v
1
r
2
+
v
2

g
m2
v
2
100
g
m1
= g
m2
=
I
C1
V
T
= 61.1 mS
r
1
= r
2
=

1
g
m1
= 1.637 k
5.22
V
CC
I
E
(500 ) I
B
(20 k) I
E
(400 ) = V
BE
V
CC

1 +

I
C
(500 + 400 )
1

I
C
(20 k) = V
T
ln(I
C
/I
S
)
I
C
= 1.584 mA
V
BE
= V
T
ln(I
C
/I
S
) = 754 mV
V
CE
= V
CC
I
E
(500 ) I
E
(400 )
= V
CC

1 +

I
C
(500 + 400 ) = 1.060 V
Q
1
is operating in forward active.
5.23
V
BC
200 mV
V
CC
I
E
(1 k) I
B
R
B
(V
CC
I
E
(1 k) I
C
(500 )) 200 mV
I
C
(500 ) I
B
R
B
200 mV
I
B
R
B
I
C
(500 ) 200 mV
V
CC
I
E
(1 k) I
B
R
B
= V
BE
= V
T
ln(I
C
/I
S
)
V
CC

1 +

I
C
(1 k) I
C
(500 ) + 200 mV V
T
ln(I
C
/I
S
)
I
C
1.29 mA
R
B

I
C
(500 ) 200 mV
IC

34.46 k
5.25 (a)
I
C1
= 1 mA
V
CC
(I
E1
+ I
E2
)(500 ) = V
T
ln(I
C2
/I
S2
)
V
CC

1 +

I
C1
+
1 +

I
C2

(500 ) = V
T
ln(I
C2
/I
S2
)
I
C2
= 2.42 mA
V
B
(I
E1
+ I
E2
)(500 ) = V
T
ln(I
C1
/I
S1
)
V
B

1 +

I
C1
+
1 +

I
C2

(500 ) = V
T
ln(I
C1
/I
S1
)
V
B
= 2.68 V
(b) The small-signal model is shown below.
r
1
+
v
1

r
2
+
v
2

200
g
m1
v
1
g
m2
v
2
500
g
m1
= I
C1
/V
T
= 38.5 mS
r
1
=
1
/g
m1
= 2.6 k
g
m2
= I
C2
/V
T
= 93.1 mS
r
2
=
2
/g
m2
= 1.074 k
5.26 (a)
V
CC
I
B
(60 k) = V
EB
V
CC

1

pnp
I
C
(60 k) = V
T
ln(I
C
/I
S
)
I
C
= 1.474 mA
V
EB
= V
T
ln(I
C
/I
S
) = 731 mV
V
EC
= V
CC
I
C
(200 ) = 2.205 V
Q
1
is operating in forward active.
(b)
V
CC
V
BE1
I
B2
(80 k) = V
EB2
V
CC
V
T
ln(I
C1
/I
S
) I
B2
(80 k) = V
T
ln(I
C2
/I
S
)
I
C1
=

npn
1 +
npn
I
E1
=

npn
1 +
npn
I
E2
=

npn
1 +
npn

1 +
pnp

pnp
I
C2
V
CC
V
T
ln

npn
1 +
npn

1 +
pnp

pnp

I
C2
I
S

pnp
I
C2
(80 k) = V
T
ln(I
C2
/I
S
)
I
C2
= 674 A
V
BE2
= V
T
ln(I
C2
/I
S
) = 711 mV
I
C1
= 680 A
V
BE1
= V
T
ln(I
C1
/I
S
) = 711 mV
V
CE1
= V
BE1
= 711 mV
V
CE2
= V
CC
V
CE1
I
C2
(300 )
= 1.585 V
Q
1
is operating on the edge of saturation. Q
2
is operating in forward active.
5.27 See Problem 26 for the derivation of I
C
for each part of this problem.
(a) The small-signal model is shown below.
60 k
r

+
v

g
m
v

200
I
C
= 1.474 mA
g
m
=
I
C
V
T
= 56.7 mS
r

=

g
m
= 1.764 k
(b) The small-signal model is shown below.
r
1
+
v
1

g
m1
v
1
r
2

v
2
+
80 k
g
m2
v
2
300
I
C1
= 680 A
g
m1
=
I
C1
V
T
= 26.2 mS
r
1
=

npn
g
m1
= 3.824 k
I
C2
= 674 A
g
m2
=
I
C2
V
T
= 25.9 mS
r
2
=

pnp
g
m2
= 1.929 k
5.30
V
CC
I
C
(1 k) = V
EC
= V
EB
(in order for Q
1
to operate at the edge of saturation)
= V
T
ln(I
C
/I
S
)
I
C
= 1.761 mA
V
EB
= 739 mV
V
CC
V
EB
R
B

V
EB
5 k
= I
B
=
I
C

R
B
= 9.623 k
First, lets consider when R
B
is 5 % larger than its nominal value.
R
B
= 10.104 k
V
CC
V
T
ln(I
C
/I
S
)
R
B

V
T
ln(I
C
/I
S
)
5 k
=
I
C

I
C
= 1.411 mA
V
EB
= 733 mV
V
EC
= V
CC
I
C
(1 k) = 1.089 V
V
CB
= 355 mV (the collector-base junction is reverse biased)
Now, lets consider when R
B
is 5 % smaller than its nominal value.
R
B
= 9.142 k
V
CC
V
T
ln(I
C
/I
S
)
R
B

V
T
ln(I
C
/I
S
)
5 k
=
I
C

I
C
= 2.160 mA
V
EB
= 744 mV
V
EC
= V
CC
I
C
(1 k) = 340 mV
V
CB
= 405 mV (the collector-base junction is forward biased)
5.31
V
BC
+ I
C
(5 k)
10 k

V
CC
V
BC
I
C
(5 k)
10 k
= I
B
=
I
C

V
BC
= 300 mV
I
C
= 194 A
V
EB
= V
T
ln(I
C
/I
S
) = 682 mV
V
CC
I
E
R
E
I
C
(5 k) = V
EC
= V
EB
+ 300 mV
V
CC

1 +

I
C
R
E
I
C
(5 k) = V
EB
+ 300 mV
R
E
= 2.776 k
Lets look at what happens when R
E
is halved.
R
E
= 1.388 k
V
CC
I
E
R
E
V
EB
10 k

V
CC
(V
CC
I
E
R
E
V
EB
)
10 k
= I
B
=
I
C

V
CC

1+

I
C
R
E
V
T
ln(I
C
/I
S
)
10 k

V
CC

V
CC

1+

I
C
R
E
V
T
ln(I
C
/I
S
)

10 k
= I
C
I
C
= 364 A
V
EB
= 698 V
V
EC
= 164 V
Thus, when R
E
is halved, Q
1
operates in deep saturation.
5.32
V
CC
I
B
(20 k) I
E
(1.6 k) = V
BE
= V
T
ln(I
C
/I
S
)
V
CC

I
C

(20 k)
1 +

I
C
(1.6 k) = V
BE
= V
T
ln(I
C
/I
S
)
I
S
=
I
C
e
h
VCC
I
C

(20 k)
1+

IC(1.6 k)
i
/VT
I
C
= 1 mA
I
S
= 3 10
14
A
5.38 (a)
A
v
= g
m1
_
1
g
m2
r
2
_
R
in
= r
1
R
out
=
1
g
m2
r
2
(b)
A
v
= g
m1
_
R
1
+
1
g
m2
r
2
_
R
in
= r
1
R
out
= R
1
+
1
g
m2
r
2
(c)
A
v
= g
m1
_
R
C
+
1
g
m2
r
2
_
R
in
= r
1
R
out
= R
C
+
1
g
m2
r
2
(d) Lets determine the equivalent resistance seen looking up from the output by drawing a small-
signal model and applying a test source.

v
t
+
i
t
r
2
+
v
2

R
C
g
m2
v
2
i
t
=
v
2
r
2
+ g
m2
v
2
v
2
= v
t
i
t
= v
t
_
1
r
2
+ g
m2
_
v
t
i
t
=
1
g
m2
r
2
A
v
= g
m1
_
1
g
m2
r
2
_
R
in
= r
1
R
out
=
1
g
m2
r
2
(e) From (d), we know the gain from the input to the collector of Q
1
is g
m1
_
1
gm2
r
2
_
. If we nd
the gain from the collector of Q
1
to v
out
, we can multiply these expressions to nd the overall
gain. Lets draw the small-signal model to nd the gain from the collector of Q
1
to v
out
. Ill refer
to the collector of Q
1
as node X in the following derivation.

v
X
+
r
2
+
v
2

R
C
v
out
g
m2
v
2
v
X
v
out
R
C
= g
m2
v
2
v
2
= v
X
v
X
v
out
R
C
= g
m2
v
X
v
X
_
1
R
C
g
m2
_
=
v
out
R
C
v
out
v
X
= 1 g
m2
R
C
Thus, we have
A
v
= g
m1
_
1
g
m2
r
2
_
(1 g
m2
R
C
)
R
in
= r
1
To nd the output resistance, lets draw the small-signal model and apply a test source at the
output. Note that looking into the collector of Q
1
we see innite resistance, so we can exclude it
from the small-signal model.
r
2
+
v
2

R
C

v
t
+
i
t
g
m2
v
2
i
t
= g
m2
v
2
+
v
2
r
2
v
2
=
r
2
r
2
+ R
C
v
t
i
t
=
_
g
m2
+
1
r
2
_
r
2
r
2
+ R
C
v
t
R
out
=
v
t
i
t
=
_
1
g
m2
r
2
_
r
2
+ R
C
r
2
5.39 (a)
A
v
= g
m1
_
r
o1

1
g
m2
r
2
r
o2
_
R
in
= r
1
R
out
= r
o1

1
g
m2
r
2
r
o2
(b)
A
v
= g
m1
_
r
o1

_
R
1
+
1
g
m2
r
2
r
o2
__
R
in
= r
1
R
out
= r
o1

_
R
1
+
1
g
m2
r
2
r
o2
_
(c)
A
v
= g
m1
_
r
o1

_
R
C
+
1
g
m2
r
2
r
o2
__
R
in
= r
1
R
out
= r
o1

_
R
C
+
1
g
m2
r
2
r
o2
_
(d) Lets determine the equivalent resistance seen looking up from the output by drawing a small-
signal model and applying a test source.

v
t
+
i
t
r
2
+
v
2

R
C X
r
o2
g
m2
v
2
i
t
=
v
2
r
2
+
v
t
v
X
R
C
v
X
v
t
R
C
+ g
m2
v
2
+
v
X
r
o2
= 0
v
2
= v
t
v
X
_
1
R
C
+
1
r
o2
_
= v
t
_
1
R
C
g
m2
_
v
X
= v
t
_
1
R
C
g
m2
_
(r
o2
R
C
)
i
t
=
v
t
r
2
+
v
t
R
C

1
R
C
v
t
_
1
R
C
g
m2
_
(r
o2
R
C
)
= v
t
_
1
r
2
+
1
R
C

1
R
C
_
1
R
C
g
m2
_
(r
o2
R
C
)
_
= v
t
_
1
r
2
+
1
R
C
+
_
g
m2

1
R
C
_
r
o2
r
o2
+ R
C
_
v
t
i
t
= r
2
R
C

_
r
o2
+ R
C
r
o2
1
g
m2

1
RC
_
A
v
= g
m1
_
r
o1
r
2
R
C

_
r
o2
+ R
C
r
o2
1
g
m2

1
RC
__
R
in
= r
1
R
out
= r
o1
r
2
R
C

_
r
o2
+ R
C
r
o2
1
g
m2

1
RC
_
(e) From (d), we know the gain from the input to the collector of Q
1
is g
m1
_
r
o1
r
2
R
C

_
ro2+RC
ro2
1
gm2
1
R
C
__
.
If we nd the gain from the collector of Q
1
to v
out
, we can multiply these expressions to nd the
overall gain. Lets draw the small-signal model to nd the gain from the collector of Q
1
to v
out
.
Ill refer to the collector of Q
1
as node X in the following derivation.

v
X
+
r
2
+
v
2

R
C
v
out
r
o2
g
m2
v
2
v
out
v
X
R
C
+ g
m2
v
2
+
v
out
r
o2
= 0
v
2
= v
X
v
out
v
X
R
C
+ g
m2
v
X
+
v
out
r
o2
= 0
v
out
_
1
R
C
+
1
r
o2
_
= v
X
_
1
R
C
g
m2
_
v
out
v
X
=
_
1
R
C
g
m2
_
(R
C
r
o2
)
Thus, we have
A
v
= g
m1
_
r
o1
r
2
R
C

_
r
o2
+ R
C
r
o2
1
g
m2

1
RC
__
_
1
R
C
g
m2
_
(R
C
r
o2
)
R
in
= r
1
To nd the output resistance, lets draw the small-signal model and apply a test source at the
output. Note that looking into the collector of Q
1
we see r
o1
, so we replace Q
1
in the small-signal
model with this equivalent resistance. Also note that r
o2
appears from the output to ground, so
we can remove it from this analysis and add it in parallel at the end to nd R
out
.
r
o1
r
2
+
v
2

R
C

v
t
+
i
t
g
m2
v
2
i
t
= g
m2
v
2
+
v
2
r
2
r
o1
v
2
=
r
2
r
o1
r
2
r
o1
+ R
C
v
t
i
t
=
_
g
m2
+
1
r
2
r
o1
_
r
2
r
o1
r
2
r
o1
+ R
C
v
t
R
out
= r
o2

v
t
i
t
= r
o2

__
1
g
m2
r
2
r
o1
_
r
2
r
o1
+ R
C
r
2
r
o1
_
5.43
A
v
=
R
C
1
gm
+ (200 )
=
R
C
VT
IC
+ (200 )
= 100
R
C
= 100
V
T
I
C
+ 100(200 )
I
C
R
C
I
E
(200 ) = V
CE
= V
BE
= V
T
ln(I
C
/I
S
)
I
C

100
V
T
I
C
+ 100(200 )

1 +

I
C
(200 ) = V
T
ln(I
C
/I
S
)
We can see that this equation has no solution. For example, if we let I
C
= 0, we see that according to
the left side, we should have V
BE
= 2.6 V, which is clearly an infeasible value. Qualitatively, we know
that in order to achieve a large gain, we need a large value for R
C
. However, increasing R
C
will result
in a smaller value of V
CE
, eventually driving the transistor into saturation. When A
v
= 100, there
is no value of R
C
that will provide such a large gain without driving the transistor into saturation.
5.46 (a)
A
v
=
R
1
+
1
gm2
r
2
1
gm1
+ R
E
R
in
= r
1
+ (1 +
1
)R
E
R
out
= R
1
+
1
g
m2
r
2
(b)
A
v
=
R
C
1
gm1
+
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

R
out
= R
C
(c)
A
v
=
R
C
1
gm1
+
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

R
out
= R
C
(d)
A
v
=
R
C
1
gm1
+
1
gm2
r
2
+
RB
1+1
R
in
= R
B
+ r
1
+ (1 +
1
)

1
g
m2
r
2

R
out
= R
C
(e)
A
v
=
R
C
1
gm1
+
1
gm2
r
2
+
RB
1+1
R
in
= R
B
+ r
1
+ (1 +
1
)

1
g
m2
r
2

R
out
= R
C
5.47 (a)
A
v
=
R
C
+
1
gm2
r
2
1
gm1
+R
E
R
in
= r
1
+ (1 +
1
) R
E
R
out
= R
C
+
1
g
m2
r
2
(b)
A
v
=
R
C
+
1
gm2
r
2
1
gm1
+R
E

1
gm2
r
2
R
C
+
1
gm2
r
2
=
1
gm2
r
2
1
gm1
+R
E
R
in
= r
1
+ (1 +
1
) R
E
R
out
=
1
g
m2
r
2
(c)
A
v
=
R
C
+
1
gm2
r
2
1
gm1
+
1
gm3r3
R
in
= r
1
+ (1 +
1
)

1
g
m3
r
3

R
out
= R
C
+
1
g
m2
r
2
(d)
A
v
=
R
C
r
2
1
gm1
+R
E
R
in
= r
1
+ (1 +
1
) R
E
R
out
= R
C
r
2
5.49 (a) Looking into the emitter of Q
2
we see an equivalent resistance of
1
gm2
r
2
r
o2
, so we can draw
the following equivalent circuit for nding R
out
:
Q
1
R
out
1
gm2
r
2
r
o2
R
out
= r
o1
+ (1 +g
m1
r
o1
)

r
1

1
g
m2
r
2
r
o2

(b) Looking into the emitter of Q

2
we see an equivalent resistance of r
o2

r2+RB
1+2
(r
o2
simply appears
in parallel with the resistance seen when V
A
= ), so we can draw the following equivalent circuit
for nding R
out
:
Q
1
R
out
r
o2

r2+RB
1+2
R
out
= r
o1
+ (1 +g
m1
r
o1
)

r
1
r
o2

r
2
+R
B
1 +
2

(c) Looking down from the emitter of Q

1
we see an equivalent resistance of R
1
r
2
, so we can draw
the following equivalent circuit for nding R
out
:
Q
1
R
out
R
1
r
2
R
out
= r
o1
+ (1 +g
m1
r
o1
) (r
1
R
1
r
2
)
5.50 (a) Looking into the emitter of Q
1
we see an equivalent resistance of
1
gm1
r
1
r
o1
, so we can draw
the following equivalent circuit for nding R
out
:
Q
2
R
out
1
gm1
r
1
r
o1
V
CC
R
out
= r
o2
+ (1 +g
m2
r
o2
)

r
2

1
g
m1
r
1
r
o1

(b) Looking into the emitter of Q

1
we see an equivalent resistance of r
o1
, so we can draw the following
equivalent circuit for nding R
out
:
Q
2
R
out
r
o1
V
CC
R
out
= r
o2
+ (1 +g
m2
r
o2
) (r
2
r
o1
)
Comparing this to the solution to part (a), we can see that the output resistance is larger because
instead of a factor of 1/g
m1
dominating the parallel resistors in the expression, r
2
dominates
(assuming r
o1
r
2
).
5.52 (a)
V
CC
I
B
(100 k) I
E
(100 ) = V
BE
= V
T
ln(I
C
/I
S
)
V
CC

1

I
C
(100 k)
1 +

I
C
(100 ) = V
T
ln(I
C
/I
S
)
I
C
= 1.6 mA
A
v
=
1 k
1
gm
+ 100
g
m
= 61.6 mS
A
v
= 8.60
(b)
V
CC
I
B
(50 k) I
E
(2 k) = V
T
ln(I
C
/I
S
)
I
C
= 708 A
A
v
=
1 k
1
gm
+
(1 k)(50 k)
1+
g
m
= 27.2 mS
A
v
= 21.54
(c)
I
B
=
I
C

=
V
CC
V
BE
I
E
(2.5 k)
14 k

V
BE
+I
E
(2.5 k)
11 k
I
C
=
V
CC
V
T
ln(I
C
/I
S
)
1+

I
C
(2.5 k)
14 k

V
T
ln(I
C
/I
S
) +
1+

I
C
(2.5 k)
11 k
I
C
= 163 A
A
v
=
10 k
1
gm
+ 500 +
(1 k)(14 k)(11 k)
1+
g
m
= 6.29 mS
A
v
= 14.98
5.53 (a)
I
C
=
V
CC
1.5 V
R
C
= 4 mA
V
BE
= V
T
ln(I
C
/I
S
) = 832 mV
I
B
=
V
CC
V
BE
R
B
= 66.7 A
=
I
C
I
B
= 60
(b) Assuming the speaker has an impedance of 8 , the gain of the amplier is
A
v
= g
m
(R
C
8 )
=
I
C
V
T
(R
C
8 )
= 1.19
Thus, the circuit provides greater than unity gain.
5.54 (a)
A
v
= g
m
R
C
g
m
=
I
C
V
T
= 76.9 mS
A
v
= 38.46
R
in
=
1
g
m
r

=

g
m
= 1.3 k
R
in
= 12.87
R
out
= R
C
= 500
(b) Since A
v
= g
m
R
C
and g
m
is xed for a given value of I
C
, R
C
should be chosen as large as
possible to maximize the gain of the amplier. V
b
should be chosen as small as possible to
maximize the headroom of the amplier (since in order for Q
1
to remain in forward active, we
require V
b
< V
CC
I
C
R
C
).
5.56 (a) Looking into the emitter of Q
2
we see an equivalent resistance of
1
gm2
r
2
, so we can draw the
following equivalent circuit for nding R
in
:
Q
1
R
1
V
CC
1
gm2
r
2
R
in
R
in
=
r
1
+
1
gm2
r
2
1 +
1
(b) Looking right from the base of Q
1
we see an equivalent resistance of R
2
, so we can draw the
following equivalent circuit for nding R
in
:
Q
1
R
1
V
CC
R
2
R
in
R
in
=
r
1
+R
2
1 +
1
(c) Looking right from the base of Q
1
we see an equivalent resistance of R
2

1
gm2
r
2
, so we can
draw the following equivalent circuit for nding R
in
:
Q
1
R
1
V
CC
R
2

1
gm2
r
2
R
in
R
in
=
r
1
+R
2

1
gm2
r
2
1 +
1
(d) Looking right from the base of Q
1
we see an equivalent resistance of R
2
r
2
, so we can draw the
following equivalent circuit for nding R
in
:
Q
1
R
1
V
CC
R
2
r
2
R
in
R
in
=
r
1
+R
2
r
2
1 +
1
5.58 (a)
I
B
=
I
C

=
V
CC
V
BE
I
E
(400 )
13 k

V
BE
+ I
E
(400 )
12 k
I
C
=
V
CC
V
T
ln(I
C
/I
S
)
1+

I
C
(400 )
13 k

V
T
ln(I
C
/I
S
) +
1+

I
C
(400 )
12 k
I
C
= 1.02 mA
V
BE
= V
T
ln(I
C
/I
S
) = 725 mV
V
CE
= V
CC
I
C
(1 k) I
E
(400 ) = 1.07 V
Q
1
is operating in forward active.
(b)
A
v
= g
m
(1 k)
g
m
= 39.2 mS
A
v
= 39.2
5.61 For small-signal analysis, we can draw the following equivalent circuit.
Q
1
v
in
R
1
v
out
A
v
= g
m
R
1
R
in
=
1
g
m
r

R
out
= R
1
5.61 For small-signal analysis, we can draw the following equivalent circuit.
Q
1
v
in
R
1
v
out
A
v
= g
m
R
1
R
in
=
1
g
m
r

R
out
= R
1
5.63 Since I
S1
= 2I
S2
and theyre biased identically, we know that I
C1
= 2I
C2
, which means g
m1
= 2g
m2
.
v
out1
v
in
= g
m1
R
C
= 2g
m2
R
C
v
out2
v
in
= g
m2
R
C

v
out1
v
in
= 2
v
out2
v
in
5.67
R
out
=
r

+ R
S
1 +
=
V
T
/I
C
+ R
S
1 +
5
I
C
=

1 +
I
E
=

1 +
I
1
(1+)VT
I1
+ R
S
1 +
=
(1+)VT
I1
+ R
S
1 +
5
I
1
8.61 mA
5.68 (a) Looking into the collector of Q
2
we see an equivalent resistance of r
o2
= , so we can draw the
following equivalent circuit:
v
in
Q
1
V
CC
v
out

A
v
= 1
R
in
=
R
out
=
1
g
m1
r
1
(b) Looking down from the emitter of Q
1
we see an equivalent resistance of
1
gm2
r
2
, so we can draw
the following equivalent circuit:
v
in
Q
1
V
CC
v
out
1
gm2
r
2
A
v
=
1
gm2
r
2
1
gm1
+
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

1
g
m2
r
2

R
out
=
1
g
m1
r
1

1
g
m2
r
2
(c) Looking into the emitter of Q
2
we see an equivalent resistance of
r2+RS
1+2
, so we can draw the
following equivalent circuit:
v
in
Q
1
V
CC
v
out
r2+RS
1+2
A
v
=
r2+RS
1+2
1
gm1
+
r2+RS
1+2
R
in
= r
1
+ (1 +
1
)

r
2
+ R
S
1 +
2

R
out
=
1
g
m1
r
1

r
2
+ R
S
1 +
2

(d) Looking down from the emitter of Q

1
we see an equivalent resistance of R
E
+
1
gm2
r
2
, so we
can draw the following equivalent circuit:
v
in
Q
1
V
CC
v
out
R
E
+
1
gm2
r
2
A
v
=
R
E
+
1
gm2
r
2
1
gm1
+ R
E
+
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

R
E
+
1
g
m2

R
out
=
1
g
m1
r
1

R
E
+
1
g
m2

(e) Looking into the emitter of Q

2
we see an equivalent resistance of
1
gm2
r
2
, so we can draw the
following equivalent circuit:
v
in
Q
1
V
CC
R
E
v
out
1
gm2
r
2
A
v
=
R
E
+
1
gm2
r
2
1
gm1
+ R
E
+
1
gm2
r
2

1
gm2
r
2
R
E
+
1
gm2
r
2
=
1
gm2
r
2
1
gm1
+ R
E
+
1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

R
E
+
1
g
m2
r
2

R
out
=

1
g
m1
r
1
+ R
E

1
g
m2
r
2
5.69 (a) Looking into the base of Q
2
we see an equivalent resistance of r
2
(assuming the emitter of Q
2
is
grounded), so we can draw the following equivalent circuit for nding the impedance at the base
of Q
1
:
R
eq
Q
1
V
CC
r
2
R
eq
= r
1
+ (1 +
1
)r
2
(b) Looking into the emitter of Q
1
we see an equivalent resistance of
1
gm1
r
1
(assuming the base of
Q
1
is grounded), so we can draw the following equivalent circuit for nding the impedance at the
emitter of Q
2
:
Q
2
R
eq
1
gm1
r
1
V
CC
R
eq
=
r
2
+
1
gm1
r
1
1 +
2
(c)
I
C1
+ I
C2
I
B1
=

1
I
B1
+
2
(1 +
1
)I
B1
I
B1
=
1
+
2
(1 +
1
)
If we assume that
1
,
2
1, then this simplies to
1

2
, meaning a Darlington pair has a current
gain approximately equal to the product of the current gains of the individual transistors.
5.70 (a)
R
CS
= r
o2
+ (1 + g
m2
r
o2
) (r
2
R
E
)
(b)
A
v
=
r
o2
+ (1 + g
m2
r
o2
) (r
2
R
E
)
1
gm1
+ r
o2
+ (1 + g
m2
r
o2
) (r
2
R
E
)
R
in
= r
1
+ (1 +
1
) [r
o2
+ (1 + g
m2
r
o2
) (r
2
R
E
)]
R
out
=
1
g
m1
r
1
[r
o2
+ (1 + g
m2
r
o2
) (r
2
R
E
)]
5.72 (a) Looking into the base of Q
2
we see an equivalent resistance of r
2
, so we can draw the following
equivalent circuit for nding R
in
:
R
in
Q
1
V
CC
R
E
r
2
R
in
= r
1
+ (1 +
1
) (R
E
r
o1
)
Looking into the collector of Q
2
we see an equivalent resistance of r
o2
. Thus,
R
out
= R
C
r
o2
(b) Looking into the base of Q
2
we see an equivalent resistance of r
2
, so we can draw the following
equivalent circuit for nding v
X
/v
in
:
v
in
Q
1
V
CC
v
X
R
E
r
2
v
X
v
in
=
R
E
r
2
r
o1
1
gm1
+R
E
r
2
r
o1
We can nd v
out
/v
X
by inspection.
v
out
v
X
= g
m2
(R
C
r
o2
)
A
v
=
v
X
v
in

v
out
v
X
= g
m2
(R
C
r
o2
)
R
E
r
2
r
o1
1
gm1
+R
E
r
2
r
o1
5.73 (a) Looking into the emitter of Q
2
we see an equivalent resistance of
1
gm2
r
2
, so we can draw the
following equivalent circuit for nding R
in
:
R
in
Q
1
V
CC
R
E

1
gm2
r
2
R
in
= r
1
+ (1 +
1
)

R
E

1
g
m2
r
2

Looking into the collector of Q

2
, we see an equivalent resistance of (because V
A
= ), so we
have
R
out
= R
C
(b) Looking into the emitter of Q
2
we see an equivalent resistance of
1
gm2
r
2
, so we can draw the
following equivalent circuit for nding v
X
/v
in
:
v
in
Q
1
V
CC
v
X
R
E

1
gm2
r
2
v
X
v
in
=
R
E

1
gm2
r
2
1
gm1
+
E

1
gm2
r
2
We can nd v
out
/v
X
by inspection.
v
out
v
X
= g
m2
R
C
A
v
=
v
X
v
in

v
out
v
X
= g
m2
R
C
R
E

1
gm2
r
2
1
gm1
+
E

1
gm2
r
2
5.74
R
out
= R
C
= 1 k
A
v
= g
m
R
C
= 10
g
m
= 10 mS
I
C
= g
m
V
T
= 260 A
V
CC
V
BE
R
B
= I
B
=
I
C

R
B
=
V
CC
V
T
ln(I
C
/I
S
)
I
C
= 694 k
R
in
= R
B
r

= 9.86 k > 5 k
In sizing C
B
, we must consider the eect a nite impedance in series with the input will have on the
circuit parameters. Any series impedance will cause R
in
to increase and will not impact R
out
. However,
a series impedance can cause gain degradation. Thus, we must ensure that |Z
B
| =

1
jCB

does not
degrade the gain signicantly.
If we include |Z
B
| in the gain expression, we get:
A
v
=
R
C
1
gm
+
(|ZB|)RB
1+
Thus, we want
1
1+
|Z
B
|
1
gm
to ensure the gain is not signicantly degraded.
1
1 +

1
jC
B

1
g
m
1
1 +
1
2fC
B
=
1
10
1
g
m
C
B
= 788 nF
5.75
R
out
= R
C
500
To maximize gain, we should maximize R
C
.
R
C
= 500
V
CC
I
C
R
C
V
BE
400 mV = V
T
ln(I
C
/I
S
) 400 mV
I
C
4.261 mA
To maximize gain, we should maximize I
C
.
I
C
= 4.261 mA
I
B
=
I
C

=
V
CC
V
BE
R
B
=
I
C

=
V
CC
V
T
ln(I
C
/I
S
)
R
B
R
B
= 40.613 k
5.76
R
out
= R
C
= 1 k
|A
v
| = g
m
R
C
=
I
C
R
C
V
T
20
I
C
520 A
In order to maximize R
in
= R
B
r

, we need to maximize r

, meaning we should minimize I

C
(since
r

=
VT
IC
).
I
C
= 520 A
I
B
=
I
C

=
V
CC
V
BE
R
B
=
V
CC
V
T
ln(I
C
/I
S
)
R
B
R
B
= 343 k
5.77
R
out
= R
C
= 2 k
A
v
= g
m
R
C
=
I
C
R
C
V
T
= 15
I
C
= 195 A
V
BE
= V
T
ln(I
C
/I
S
) = 689.2 mV
V
CE
V
BE
400 mV = 289.2 mV
To minimize the supply voltage, we should minimize V
CE
.
V
CE
= 289.2 mV
V
CC
V
CE
R
C
= I
C
V
CC
= 679.2 mV
Note that this value of V
CC
is less than the required V
BE
. This means that the value of V
CC
is
constrained by V
BE
, not V
CE
. In theory, we could pick V
CC
= V
BE
, but in this case, wed have
to set R
B
= 0 , which would short the input to V
CC
. Thus, lets pick a reasonable value for R
B
,
R
B
= 100 .
V
CC
V
BE
R
B
= I
B
=
I
C

V
CC
= 689.4 mV
5.78
|A
v
| = g
m
R
C
=
I
C
R
C
V
T
= A
0
R
out
= R
C
A
0
=
I
C
R
out
V
T
I
C
=
A
0
V
T
R
out
P = I
C
V
CC
=
A
0
V
T
R
out
V
CC
Thus, we must trade o a small output resistance with low power consumption (i.e., as we decrease
R
out
, power consumption increases and vice-versa).
5.79
P = (I
B
+I
C
)V
CC
=
1 +

I
C
V
CC
= 1 mW
I
C
= 396 A
V
CC
V
BE
R
B
= I
B
=
I
C

R
B
=
V
CC
V
T
ln(I
C
/I
S
)
I
C
= 453 k
A
v
= g
m
R
C
=
I
C
R
C
V
T
= 20
R
C
= 1.31 k
5.81
R
out
= R
C
1 k
To maximize gain, we should maximize R
out
.
R
C
= 1 k
V
CC
I
C
R
C
I
E
R
E
= V
CE
V
BE
400 mV
V
CC
I
C
R
C
200 mV V
T
ln(I
C
/I
S
) 400 mV
I
C
1.95 mA
To maximize gain, we should maximize I
C
.
I
C
= 1.95 mA
I
E
R
E
=
1 +

I
C
R
E
= 200 mV
R
E
= 101.5
V
CC
10I
B
R
1
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 7.950 k
9I
B
R
2
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
2
= 5.405 k
5.82
P = (10I
B
+I
C
) V
CC
=

10
I
C

+I
C

V
CC
= 5 mW
I
C
= 1.82 mA
I
E
R
E
=
1 +

I
C
R
E
= 200 mV
R
E
= 109
A
v
=
R
C
1
gm
+R
E
=
R
C
VT
IC
+R
E
= 5
R
C
= 616
V
CC
10I
B
R
1
200 mV = V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 8.54 k
9I
B
R
2
200 mV = V
BE
= V
T
ln(I
C
/I
S
)
R
2
= 5.79 k
5.83
R
in
=
1
g
m
= 50 (since R
E
doesnt aect R
in
)
g
m
= 20 mS
I
C
= g
m
V
T
= 520 A
I
E
R
E
=
1 +

I
C
R
E
= 260 mV
R
E
= 495
A
v
= g
m
R
C
= 20
R
C
= 1 k
V
CC
10I
B
R
1
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 29.33 k
9I
B
R
2
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
2
= 20.83 k
To pick C
B
, we must consider its eect on A
v
. If we assume the capacitor has an impedance Z
B
and
|Z
B
| R
1
, R
2
, then we have:
A
v
=
R
C
1
gm
+
|ZB|
1+
Thus, we should choose
1
1+
|Z
B
|
1
gm
.
1
1 +
|Z
B
| =
1
1 +
1
2fC
B
=
1
10
1
g
m
C
B
= 1.58 F
5.84
R
out
= R
C
= 500
A
v
= g
m
R
C
= 8
g
m
= 16 mS
I
C
= g
m
V
T
= 416 A
I
E
R
E
=
1 +

I
C
R
E
= 260 mV
R
E
= 619
V
CC
10I
B
R
1
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 36.806 k
9I
B
R
2
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
2
= 25.878 k
To pick C
B
, we must consider its eect on A
v
. If we assume the capacitor has an impedance Z
B
and
|Z
B
| R
1
, R
2
, then we have:
A
v
=
R
C
1
gm
+
|ZB|
1+
Thus, we should choose
1
1+
|Z
B
|
1
gm
.
1
1 +
|Z
B
| =
1
1 +
1
2fC
B
=
1
10
1
g
m
C
B
= 1.26 F
5.85
R
out
= R
C
= 200
A
v
= g
m
R
C
=
I
C
R
C
V
T
= 20
I
C
= 2.6 mA
P = V
CC
(10I
B
+I
C
)
= V
CC

10
I
C

+I
C

= 7.15 mW
5.86
P = (I
C
+ 10I
B
) V
CC
=

I
C
+ 10
I
C

V
CC
= 5 mW
I
C
= 1.82 mA
A
v
= g
m
R
C
=
I
C
R
C
V
T
= 10
R
C
= 143
I
E
R
E
=
1 +

I
C
R
E
= 260 mV
R
E
= 141.6
V
CC
10I
B
R
1
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 8.210 k
9I
B
R
2
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
2
= 6.155 k
To pick C
B
, we must consider its eect on A
v
. If we assume the capacitor has an impedance Z
B
and
|Z
B
| R
1
, R
2
, then we have:
A
v
=
R
C
1
gm
+
|ZB|
1+
Thus, we should choose
1
1+
|Z
B
|
1
gm
.
1
1 +
|Z
B
| =
1
1 +
1
2fC
B
=
1
10
1
g
m
C
B
= 5.52 F
5.87
R
in
=
1
g
m
= 50 (since R
E
doesnt aect R
in
)
g
m
= 20 mS
I
C
= g
m
V
T
= 520 A
A
v
= g
m
R
C
= 20
R
C
= 1 k
I
E
R
E
=
1 +

I
C
R
E
= 260 mV
R
E
= 495
To minimize the supply voltage, we should allow Q
1
to operate in soft saturation, i.e., V
BC
= 400 mV.
V
BE
= V
T
ln(I
C
/I
S
) = 715 mV
V
CE
= V
BE
400 mV = 315 mV
V
CC
I
C
R
C
I
E
R
E
= V
CE
V
CC
= 1.095 V
V
CC
10I
B
R
1
I
E
R
E
= V
BE
R
1
= 2.308 k
9I
B
R
2
I
E
R
E
= V
BE
R
2
= 20.827 k
To pick C
B
, we must consider its eect on A
v
. If we assume the capacitor has an impedance Z
B
and
|Z
B
| R
1
, R
2
, then we have:
A
v
=
R
C
1
gm
+
|ZB|
1+
Thus, we should choose
1
1+
|Z
B
|
1
gm
.
1
1 +
|Z
B
| =
1
1 +
1
2fC
B
=
1
10
1
g
m
C
B
= 1.58 F
5.90 As stated in the hint, lets assume that I
E
R
E
V
T
. Given this assumption, we can assume that R
E
does not aect the gain.
I
E
R
E
= 10V
T
= 260 mV
A
v
=
R
L
1
gm
+R
L
= 0.8
g
m
= 80 mS
I
C
= g
m
V
T
= 2.08 mA
1 +

I
C
R
E
= 260 mV
R
E
= 124
V
CC
I
B
R
1
I
E
R
E
= V
BE
= V
T
ln(I
C
/I
S
)
R
1
= 71.6 k
To pick C
1
, we must consider its eect on A
v
. If we assume the capacitor has an impedance Z
1
and
|Z
1
| R
1
, then we have:
A
v
=
R
E
1
gm
+R
E
+
|Z1|
1+
Thus, we should choose
1
1+
|Z
1
|
1
gm
.
1
1 +
|Z
1
| =
1
1 +
1
2fC
1
=
1
10
1
g
m
C
1
= 12.6 pF
To pick C
2
, we must also consider its eect on A
v
. Since the capacitor appears in series with R
L
, we
need to ensure that |Z
2
| R
L
, assuming the capacitor has impedance Z
2
.
|Z
2
| =
1
2fC
2
=
1
10
R
L
C
2
= 318 pF