Transistor

2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684

Unit: mm
5.90.2

4.90.2

Low collector to emitter saturation voltage VCE(sat).

Complementary pair with 2SA683 and 2SA684.

Parameter
2SC1383

base voltage

2SC1384

Collector to

2SC1383

Ratings
30

VCBO

25

50

+0.2

VEBO

Peak collector current

ICP

1.5

Collector current

IC

Collector power dissipation

PC

Junction temperature

Tj

150

Storage temperature

Tstg

55 ~ +150

ICBO

2SC1383

voltage

2SC1384

Collector to emitter

2SC1383

voltage

2SC1384

Emitter to base voltage

Conditions

1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package

min

typ

VCB = 20V, IE = 0

VCBO

IC = 10A, IE = 0

VCEO

IC = 2mA, IB = 0

VEBO

IE = 10A, IC = 0

hFE1

Forward current transfer ratio

1.27

(Ta=25C)
Symbol

Collector to base

0.450.1

1.27

Parameter
Collector cutoff current

+0.2

0.450.1

Emitter to base voltage

Electrical Characteristics

2.540.15

Unit
V

60

VCEO

emitter voltage 2SC1384

+0.3

(Ta=25C)

Symbol

Collector to

0.70.2

0.70.1

Absolute Maximum Ratings

13.50.5

3.2

8.60.2

Features

*1

VCE = 10V, IC =

500mA*2

max

Unit

0.1

30

60
25

50
5

85

160

50

100

340

hFE2

VCE = 5V, IB = 1A*2

Collector to emitter saturation voltage

VCE(sat)

IC = 500mA, IB = 50mA*2

0.2

0.4

Base to emitter saturation voltage

VBE(sat)

IC = 500mA, IB = 50mA*2

0.85

1.2

Transition frequency

fT

VCB = 10V, IE = 50mA, f = 200MHz

200

Collector output capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

11

MHz
20
*2

*1h

FE1

pF

Pulse measurement

Rank classification

Rank

hFE1

85 ~ 170

120 ~ 240

170 ~ 340

2SC1383, 2SC1384

Transistor
PC Ta

IC VCE

1.2

IC I B

1.5

1.2

1.25

0.8

0.6

0.4

0.2

8mA

1.0

7mA
6mA

0.75

5mA
4mA
3mA

0.5

2mA

60

80 100 120 140 160

Ambient temperature Ta (C)

1
Ta=75C
25C
25C

0.03
0.01
0.003
0.001
0.01 0.03

0.1

0.3

3
25C

75C
0.3
0.1
0.03

0.3

140
120
100
80
60
40
20

Emitter current IE (mA)

100

10

12

500

400

300
Ta=75C
200
25C
25C

100

0
0.01 0.03

10

0.1

0.3

10

Collector current IC (A)

VCER RBE
120
IE=0
f=1MHz
Ta=25C

45
40
35
30
25
20
15
10
5
0

30

VCE=10V

Cob VCB
Collector output capacitance Cob (pF)

Transition frequency fT (MHz)

Ta=25C

0.1

600

50

10

Base current IB (mA)

Collector current IC (A)

VCB=10V
Ta=25C

hFE IC

10

0.01
0.01 0.03

10

160

0
1

10

30

fT IE
180

IC/IB=10

Collector current IC (A)

200

100

Base to emitter saturation voltage VBE(sat) (V)

Collector to emitter saturation voltage VCE(sat) (V)

0.1

VBE(sat) IC
IC/IB=10

0.3

0.4

Collector to emitter voltage VCE (V)

VCE(sat) IC
10

0.6

0
0

Forward current transfer ratio hFE

40

10

30

100

Collector to base voltage VCB (V)

Collector to emitter voltage VCER (V)

20

0.8

0.2

1mA

0
0

1.0

IB=10mA
9mA

0.25

VCE=10V
Ta=25C

Collector current IC (A)

1.0

Collector current IC (A)

Collector power dissipation PC (W)

Ta=25C

IC=10mA
Ta=25C
100

80

60
2SC1384
40
2SC1383
20

0
0.1

0.3

10

30

100

Base to emitter resistance RBE (k)

2SC1383, 2SC1384

Transistor
ICEO Ta
104

Area of safe operation (ASO)

10

VCE=10V

Single pulse
Ta=25C

10

IC
t=10ms

0.3

t=1s

0.1
0.03
0.01
0.003

1
0

20

40

60

80 100 120 140 160

Ambient temperature Ta (C)

0.001
0.1

0.3

10

2SC1384

ICEO (Ta)
ICEO (Ta=25C)

102

2SC1383

Collector current IC (A)

ICP
103

30

100

Collector to emitter voltage VCE (V)