SEMICONDUCTOR

2N2904E

TECHNICAL DATA

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

B
B1

C
A

: ICEX=50nA(Max.), IBL=50nA(Max.)

A1

Low Leakage Current

FEATURES

@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
P

: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

CHARACTERISTIC

1. Q 1
2. Q 1
3. Q 2
4. Q 2
5. Q 2
6. Q 1

)
SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

Collector-Emitter Voltage

VCEO

40

Emitter-Base Voltage

VEBO

Collector Current

IC

200

mA

Base Current

IB

50

mA

PC *

200

mW

Tj

150

Tstg

-55 150

Collector Power Dissipation

Junction Temperature
Storage Temperature Range

: Cob=4pF(Max.) @VCB=5V.

MAXIMUM RATING (Ta=25

MILLIMETERS
_ 0.05
1.6 +
_ 0.05
1.0 +
_ 0.05
1.6 +
_ 0.05
1.2 +
0.50
_ 0.05
0.2 +
_ 0.05
0.5 +
_ 0.05
0.12 +

Low Collector Output Capacitance

DIM
A
A1
B
B1
C
D
H
J

EMITTER
BASE
BASE
COLLECTOR
EMITTER
COLLECTOR

TES6

EQUIVALENT CIRCUIT (TOP VIEW)

6

Q1

Q2

* Total Rating
1

Marking

Type Name

ZC

2002. 9. 17

Revision No : 0

1/4

2N2904E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICEX

VCE=30V, VEB=3V

50

nA

Base Cut-off Current

IBL

VCE=30V, VEB=3V

50

nA

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10 A, IE=0

60

Collector-Emitter Breakdown Voltage *

V(BR)CEO

IC=1mA, IB=0

40

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

6.0

hFE(1)

VCE=1V, IC=0.1mA

40

hFE(2)

VCE=1V, IC=1mA

70

hFE(3)

VCE=1V, IC=10mA

100

300

hFE(4)

VCE=1V, IC=50mA

60

hFE(5)

VCE=1V, IC=100mA

30

VCE(sat)1

IC=10mA, IB=1mA

0.2

VCE(sat)2

IC=50mA, IB=5mA

0.3

VBE(sat)1

IC=10mA, IB=1mA

0.65

0.85

VBE(sat)2

IC=50mA, IB=5mA

0.95

300

MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

fT

Transition Frequency

VCE=20V, IC=10mA, f=100MHz

Collector Output Capacitance

Cob

VCB=5V, IE=0, f=1MHz

4.0

pF

Input Capacitance

Cib

VBE=0.5V, IC=0, f=1MHz

8.0

pF

Input Impedance

hie

1.0

10

Voltage Feedback Ratio

hre

0.5

8.0

x10-4

Small-Signal Current Gain

hfe

100

400

Collector Output Admittance

hoe

1.0

40

Noise Figure

NF

5.0

35

35

VCE=10V, IC=1mA, f=1kHz

VCE=5V, IC=0.1mA Rg=1k

dB

f=10Hz 15.7kHz
td

10k

V in

300ns

Rise Time

tr

10.9V

275

Vout

Delay Time

C Total< 4pF

VCC =3.0V
0
t r ,t f < 1ns, Du=2%

-0.5V

Switching Time

nS

Storage Time

tstg

10k

V in

1N916
or equiv.
20s

Fall Time

tf

10.9V
-9.1V

275

Vout
C Total< 4pF

VCC =3.0V

200

50

0
t r ,t f < 1ns, Du=2%

* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

2002. 9. 17

Revision No : 0

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2N2904E

I C - V CE
1k

0.9
0.8
0.7
0.6
0.5

COMMON EMITTER
Ta=25 C

80

DC CURRENT GAIN h FE

0.4

60

0.3

40

0.2
I B =0.1mA

20

COMMON EMITTER
VCE =1V

500
Ta=125 C

300

Ta=25 C
Ta=-55 C

100
50
30

10

0
0

0.1

0.3

COLLECTOR-EMITTER VOLTAGE VCE (V)

0.5

Ta=25 C

0.3

Ta=125 C

0.1
1

10

30

100

300

40

0.4

0.8

1.2

BASE-EMITTER VOLTAGE VBE (V)

2002. 9. 17

Ta=125 C

0.1
0.05

Ta=25 C
Ta=-55 C

0.03

0.01
0.1

0.3

10

30

100

VCE - I B

120

0.3

I C - VBE

80

300

COMMON EMITTER
I C /I B =10

0.5

COLLECTOR CURRENT I C (mA)

Revision No : 0

1.6

300

0.8

I C =100mA

1.0
IC =10mA

COMMON EMITTER
VCE =1V

160

100

COLLECTOR CURRENT I C (mA)

Ta=
125
C
Ta=
25 C
Ta=5
5 C

COLLECTOR CURRENT I C (mA)

200

0.3

IC =1mA

0.1

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)

Ta=-55 C

COLLECTOR-EMITTER VOLTAGE VCE (V)

BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)

30

VCE(sat) - I C

COMMON EMITTER
I C /I E =10

10

COLLECTOR CURRENT I C (mA)

V BE(sat) - I C
10

I C =30mA

COLLECTOR CURRENT I C (mA)

100

h FE - I C

0.6
0.4
0.2

COMMON
EMITTER
Ta=25 C

0
0.001

0.01

0.1

10

BASE CURRENT I B (mA)

3/4

Cob - VCB , C ib - VEB

50

f=1MHz
Ta=25 C

CAPACITANCE Cob (pF)

C ib (pF)

30

10
C ib

5
3

C ob

1
0.5
0.1

0.3

10

REVERSE VOLTAGE V CB (V)

V EB (V)

2002. 9. 17

Revision No : 0

30

COLLECTOR POWER DISSIPATION PC (mW)

2N2904E
Pc - Ta
250
200
150
100
50
0

25

50

75

100

125

150

AMBIENT TEMPERATURE Ta ( C)

4/4

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