Transistor

2SC2851
Silicon NPN epitaxial planer type
For high-frequency power amplification
Unit: mm
5.90.2

4.90.2

8.60.2

Features
High transition frequency fT.
Output of 0.6W is obtained in the VHF band (f = 175MHz).
+0.3

0.70.2

0.70.1

13.50.5

2.540.15

(Ta=25C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

36

Collector to emitter voltage

VCEO

16

Emitter to base voltage

VEBO

Peak collector current

ICP

0.5

Collector current

IC

0.3

Collector power dissipation

PC

Junction temperature

Tj

150

Storage temperature

Tstg

55 ~ +150

Electrical Characteristics

+0.2

+0.2

0.450.1

0.450.1

1.27

1.27

3.2

Absolute Maximum Ratings

1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package

(Ta=25C)

Parameter

Symbol

Conditions

min

typ

VCB = 20V, IE = 0

max

Unit

10

Collector cutoff current

ICBO

Forward current transfer ratio

hFE

VCE = 13.5V, IC = 100mA

20

50

Transition frequency

fT

VCB = 10V, IE = 100mA, f = 200MHz

1.5

Collector output capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

High-frequency output

PO*

VCC = 13.5V, Pi = 0.03W, f = 175MHz

0.6

0.9

Overall efficiency

VCC = 13.5V, Pi = 0.03W, f = 175MHz

60

*Refer

GHz
8

pF

to the PO measurment circuit

Transistor

2SC2851

The high-frequency output measurement circuit at 175MHz

15pF

L2
20pF 30pF

Input
50

L1

Output
50

30pF
15pF
RFC2

RFC1
30pF

30pF

25pF

47
1000pF

0.0025pF

Circuit constants
L1: 2mm silver plated copper wire, 0.5T, D = 15
L2: 1.5mm silver plated copper wire, 2T, D = 15
RFC1: 1.0mm enameled, 15T, D = 7
RFC2: 1.5mm silver plated copper wire, 5T, D = 8

IC VCE
160

1.4

140

VCE=13.5V
Ta=25C

1.0
0.8
0.6
0.4
0.2

350
IB=4.0mA

120

3.5mA
100

3.0mA
2.5mA

80

2.0mA

60

1.5mA
40

1.0mA
0.5mA

20
0
0

25

50

75

100

125

150

Ambient temperature Ta (C)

Collector current IC (mA)

1.2

IC VBE
400
Ta=25C

Collector current IC (mA)

Collector power dissipation PC (W)

PC Ta
1.6

300
250
200
150
100
50
0

10

12

Collector to emitter voltage VCE (V)

0.2

0.4

0.6

0.8

1.0

1.2

Base to emitter voltage VBE (V)

Transistor

2SC2851
hFE IC
IC/IB=5
Ta=25C

4.0
VCE=13.5V
Ta=25C

1
0.3
0.1
0.03
0.01
0.003

140
120
100
80
60
40
20

0.3

Collector current IC (A)

2.5
2.0
1.5
1.0

30

100

300

1000

0
1

10

30

100 300 1000

Emitter current IE (mA)

2.0
VCC=13.5V
f=175MHz
Ta=25C
1.6

Output power Po (W)

Collector output capacitance Cob (pF)

3.0

Po Pi
IE=0
f=1MHz
Ta=25C

10

10

Collector current IC (mA)

Cob VCB
12

3.5

0.5

0
0.1

VCB=10V
Ta=25C

Transition frequency fT (GHz)

0.001
0.001 0.003 0.01 0.03

fT I E

160

Forward current transfer ratio hFE

Collector to emitter saturation voltage VCE(sat) (V)

VCE(sat) IC
10

1.2

0.8

0.4

0
1

10

30

100

Collector to base voltage VCB (V)

40

80

120

160

200

Input power Pi (mW)