1.

2
3.
4.
5.
6.
7.
8.
9.
10.

What is junction breakdown voltage?

Write the threshold voltage equation for SPICE Level 1 model?
List any two assumptions of SPICE level 1 model?
Write the sub-threshold region current in the MOSFET level 4 model.
Mention the components associated with the capacitance of real PN Junction.
Draw the small signal and large signal model of a diode Write the ideal diode current equation.
Write the assumptions required to plot junction voltage characteristics.
Draw the PN junction diode characteristics.
State the difference between drift capacitance and diffusion capacitance.
How is the parameter LAMBDA determined?
(ANSWER ALL QUESTIONS)

11.

a)

Write about PN junction diode operation at equilibrium and non-equilibrium conditions.

(OR)
Derive Current-Voltage Characteristics of PN junction diode.

b)
12.

a)
(i)
(ii)
(iii)
(iv)

Write short notes on

Junction Breakdown Voltage
Bulk resistance
Junction capacitance
Small signal conductance of diode.

(16)
(16)

(4)
(4)
(4)
(4)
(OR)

b)
13.

a)

(i)
(ii)

Derive temperature dependent diode model parameters.

(16)

Explain diode circuit model.

State the limitations of Diode Current Model in detail.

(8)
(8)

(OR)

b)
14.

a)

(i)
(ii)
(iii)

Derive the constraints for Multistep Algorithm for explicit and implicit form.

(16)

Define Stiffness.
Write a note on Stiff state equation.
Obtain the appropriate region for stable operation of stiff state equations.

(2)
(10)
(4)

(OR)

15.

(16)

b)

(i)

Compare four different types of MOSFET model and explain MOSFET Level 4 model
with necessary equations.

a)

(i)

Explain the capacitance model, DC model and assumptions in MOSFET Level 1 model.

(16)

(ii)

(OR)
Describe MOSFET Level 3 model with appropriate equations.

(16)