Tutorial Sheet

1.

Given the information appearing in Fig. 1,Determine:

(a) IC (b) RC (c) RB (d) VCE, assuming IB= 40 A, = 80, VCC =12V, VC = 6V.
2.
For the emitter-stabilized bias circuit of fig 2
(a) IBQ (b) ICQ (c) VCEQ (d) VC (e) VB (f)VE assuming RB= 510 K, RC= 2.4 K, RE= 1.5 K, Vcc= 20 V,
= 100.
3. (a) For the voltage-divider bias configuration of Fig. 3,
(i) Determine (a) IBQ (b) ICQ (c) VCEQ (d) VC (e) VE (f)VB, assuming R1= 62 K, R2= 9.1 K,
RC= 3.9 K, RE= 0.68 K, Vcc= 16 V, = 80.
(ii) Assuming R2= 5.6 K, RC= 4.7 K, RE= 1.2 K, Vcc= 18 V, VC=12 V, = 100, determine: (a) IC (b) VE
(c) VB (d) R1
(iii) Design a voltage divider bias network, using a supply of 24 V, a transistor with a beta of 110 and
operating point of ICQ = 4 mA and VCEQ = 8 V. Choose VE = (1/8) VCC.
(b) For collector bias circuit shown in Fig 3(b), determine the value of IC and VCE . Also compute the new value
of IC and VCE for =120.

Fig.1

Fig. 2

Fig.3 (a)

Fig.3(b)

Q5.DeterminethefollowingforthenetworkofFig.5(a)and(b).

(a) S(ICO).
.

(b) S(VBE).

Fig 5(a)

Fig 5(b)

Q6. Find the relationship between R1 and R2 in the circuit shown in Fig. 6.Given: VCC=12V,
VBE=0.2V,ICQ=18mA, IBQ=0.3mA, SI=10,=100, VCEQ=4.2V, RC=0.33K, RE=0.1K,VBE=0.2V.
Q7. A transistor with hfe=100, VBE=0.6V, VCC=22.5V, RC=5.5K, is used in the circuit of Fig6.
The Q-point is desired to be at VCEQ=12.5V, IC=1.5mA and SI2. Find the values of R1, R2 and
RE.