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# EC238 Electronics I

Lecture 8
MOSFET DC and Biasing

Example 1

## An enhancement NMOS transistor with

Vt= 0.7V has its source terminal
grounded and a 1.5V dc applied to the
gate. In what region does operate for
a)

VD = 0.5V

b)

VD = 0.9V

c)

VD=3V

Solution

a)

Triode

b)

Saturation

c)

Saturation

Example 2
If the transistor in example 1 has nCox
= 100 A/V2, W=10 m and L=1 m, find
the value of drain current when VD=0.5
and VD=3V.
Solution

a)

I D n Cox
ID
ID
3

b)

W
L

10
100 *
1
275A

ID= 320 A

1 2
(
V

V
)
V

VDS
GS
t
DS

2

Example 2
b)

n Cox W
2

ID
(VGS Vt )
2
L
100 10
2
ID
[ 0 .8 ]
2
1
I D 320 A
4

## Fixed bias Technique

The simplest of biasing arrangements for the MOSFET
Example: Calculate the bias current of M1 in Fig. 1, the
transistor is in saturation mode. Assume nCox = 100A/V2 ,
Vth = 0.4 V and VG =1V.

Solution

M1 in saturation region

## Self bias Technique

Need only one DC battery

## Example :Design the circuit shown to obtain a current ID

of 0.4mA. R and find the dc voltage VD. The NMOS
transistor have Vt= 2V, has nCox = 20 A/V2, L =10 m and
W=100 m. neglect the channel length modulation effect
Solution
(assume = 0)
VD= VG then transistor operates in
saturationregion.
C W
ID

ox

(V

GS

Vt ) 2

20 100
400 A

[VDS 2]2
2
10
6

VDS = 4 and 0 V

VDS = 4

RD

VDD VD

ID
10 4

15 K
0.4

## o This is called: Diode-Connected MOSFET.

o It always works in saturation

## Example The PMOS in circuit shown is working in

saturation. The RG1 =2M, R2=3M, RD=6k and
VD=3V. Let the enhancement type PMOS transistor
have Vt= -1V, and Kp (W/L)= 1 mA/V2
Solution
o ID= VD/RD = 3/6 = 0.5mA
oSince transistor operates in saturation region
ID
0.5

n Cox W
2

GS

Vt ) 2

1
1 [VGS ( 1)]2
2

oVGS= 0 or -2
8

(V

## Voltage Divider Bias

VGS = -2V = VG - VS
VS = 5V , VG = +3V

2M =

VGS
3V

Vt = -1V

3M =