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  • CMOS inverter circuit design parameters propagation delay

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    Subir Maity
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    1) Design a CMOS inverter with given transistor parameters to have a switching threshold voltage of 1.4V. 2) Design a CMOS inverter with given process parameters to have propagation delay times less than or equal to 0.2ns for a low to high transition and 0.15ns for a high to low transition. 3) Determine the region of operation (cut-off, linear, saturation) for transistors M4 and M5 in the given circuit configuration based on the supplied voltages and transistor parameters.

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    1) Design a CMOS inverter with given transistor parameters to have a switching threshold voltage of 1.4V. 2) Design a CMOS inverter with given process parameters to have propagation delay times less than or equal to 0.2ns for a low to high transition and 0.15ns for a high to low transition. 3) Determine the region of operation (cut-off, linear, saturation) for transistors M4 and M5 in the given circuit configuration based on the supplied voltages and transistor parameters.

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    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    14 vizualizări1 pagină

    CMOS inverter circuit design parameters propagation delay

    Încărcat de

    Subir Maity
    1) Design a CMOS inverter with given transistor parameters to have a switching threshold voltage of 1.4V. 2) Design a CMOS inverter with given process parameters to have propagation delay times less than or equal to 0.2ns for a low to high transition and 0.15ns for a high to low transition. 3) Determine the region of operation (cut-off, linear, saturation) for transistors M4 and M5 in the given circuit configuration based on the supplied voltages and transistor parameters.

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    © All Rights Reserved
    Descărcați ca PDF, TXT sau citiți online pe Scribd
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    din 1

    1) Design a CMOS inverter circuit of following parameters: VT0n= 0.

    6V, nCox= 60A/V2, (W/L)n= 8,


    VT0p = -0.7V, pCox = 25A/V2, (W/L)p=12.Supply voltage = 3.3 volt. Channel length of both
    transistor is 0.8m. Determine (Wn/Wp) ratio so that switching threshold voltage of inverter circuit
    Vth=1.4 volt.
    2) A company has access to a CMOS fabrication process with the following device parameters listed
    below:
    nCox=120 A/V2, pCox=60 A/V2, L=0.6m for both NMOS and PMOS, VT0n=0.8V, VT0p= -1.0V,
    Combined load capacitance value= 300fF and Wmin= 1.2m.Design a CMOS inverter by determining
    channel width Wn and Wp of NMOS and PMOS transistors such that propagation delay times t PHL
    0.2ns and tPLH 0.15ns.
    3) Find the region of operation for the transistor M4 and M5 in the given configuration. All the
    transistors have identical sizes. Assume VDD = 2.5 V, and VTn = 0.4 V,
    W = 1m, L = 0.25 m,
    kn = 115 A/V2.

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