POLPREVODNIKA ELEKTRONIKA

etveropoli:

y mn = g mn + jbmn

z mn = rmn + jxmn

I1 = y U 1 + y U 2

U 1 = z 11 I 1 + z 12 I 2

U 1 = h 11 I 1 + h 12 U 2

I 2 = y U1 + y U 2

U 2 = z 21 I 1 + z 22 I 2

I 2 = h 21 I 1 + h 22 U 2

11

h mn = Re [ hmn ] + j Im [ h mn ]

21

12

22

Polprevodnik:

n = NC e

EC EF
kT

EF EV
kT

p = NV e

= ni e

= ni e

EF EFi
qU T

E Fi EF
qU T

= ni e

VFi VF
UT

= ni e

VF VFi
UT

J n = q n nE + qD n

dn
dx

n n 0 1 j n
n
=
+
t
n
q x

= q( p n + N D N A )

J p = q p pE qD p

dp
dx

p p 0 1 j p
p
=

t
p
q x

d 2V
dx 2

pn dioda:
D p pn 0 Dn n p 0
I = A J = Aq
+
e
L
Ln
p

U D = VFin VFip = U T ln

pp0
pn 0

U
UT

1 = I S e

U
UT

U
UT

p p 0 nn 0
nn 0
= U Fp + U Fn = U T ln

np0
ni2

xp =

2 N A (U D + U R )
q ND ( N A + ND )

Ebers-Mollov model bipolarnega tranzistorja (pnp):

I F = I ES e

IE = IF R IR

U EB
UT

U CB

I R = I CS e UT 1

I C 0 = I CS (1 F R )

I C = F I F + I R

I E 0 = I ES (1 F R )
Spojni FET (n kanal):

U
I DS = I DSS 1 GS
UP

I
I
=
U UT

g NF =

VF

1 + j p = g + jb

I
UT

Cd

= g NF

Cd

NF

VF

=
=

g NF p
2
g

VF

Malosignalni model bipolarnega tranzistorja:

UUEB

I E = I E 0 e T 1 R I C

UCB

I C = F I E + I C 0 e UT 1

F I ES = R I CS

kT
= UT
q

CT =

y=

2 1
1
+

(U D + U R )
q NA ND

D = x p + xn =

2 N D (U D + U R )
q N A ( NA + ND )

N A >> N D & u = U F :

N N
q
U T ln A 2 D = U p + U n =
( N A x2p + N D xn2 )
ni
2
xn =

dE
=
dx

Malosignalni model pn diode:

Dp
D
1 = Aqni2
+ n e

L p N D Ln N A

= U T ln

L = D

gm = 0 ge =

IC
UT

IC
IE

Ai

U CB = 0

ge =
0

=
U CB = 0

IE
UT

1+

rbe =
0
1+

jf
f

gm

= ( f )

MOS tranzistor (n kanal):

UP = UD

qN D D
8

U DSsat = U GS U P

MI C 0
1 M1 M 2

tirislojna dioda:

I=

Fotodioda:

I = I S e nUT 1 + I L

Tabela fizikalnih konstant

Boltzmannova konstanta
absolutna vrednost naboja elektrona
Planckova konstanta
masa elektrona
termina napetost
intrinsina koncentracija (Si)
dielektrina konstanta
relativna dielektrina konstanta Si
relativna dielektrina konstanta SiO2

ID =

I DS

C0W n
U DS
(U GS U T ) U DS

L
2

C W n 2 U GS
= 0
UT 1

2L
UT

U DSsat = U GS U T

MI C 0 + M 2 I G
1 M1 M 2

Tiristor:

I=

Fototranzistor:

IC = I B

k = 1.3810 23 J/K
q = 1.610 19 As
h = 6.62510 34 Ws2
m = 9.1110 31 kg
UT = kT/q = 25.66 mV (T = 297.8 K = 24.8 oC)
ni = 1010 cm 3 (T = 297.8 K = 24.8 oC)
0 = 8.854.10 12 As/(Vm) = 8.854.10 14 As/(Vcm)
r(Si) = 11.7 12 0 rSi = 10 12 As/(Vcm)
r(SiO2) = 3.85 4

F
1F

IC 0 + I L
1 F