1

Name:

Matric No.:

ECE 1231
Quiz 1
1. Calculate the intrinsic carrier concentration in silicon and germanium at T = 300K
and K=8610-6 eV/K. [Si: B=5.231015, Eg=1.1; Ge: B=1.661015, Eg=0.66].
Solution:

1 .1
= 1.5 1010 cm 3
Si : ni = (5.23 1015 )(300)3 / 2 exp
6
2(86 10 )(300)

0.66
= 2.40 1013 cm 3
Ge : ni = (1.66 1013 )(300)3 / 2 exp
6
2(86 10 )(300)
2. Silicon is doped with 51016 arsenic atoms/cm3. Mention the material is n- or ptype. Calculate the electron and hole concentrations at T=300K.

3. Calculate the hole diffusion current density at x=0 cm, when considering silicon
at T=300K. Assume the hole concentration is given by p = 1016e-x/Lp (cm-3), where
Lp = 10-3 cm and Dp=10 cm2/s. [e=1.610-19].
dp
1
x
J p = eD p
= eD p (1016 )( ) exp( )
dx
Lp
Lp
Jp =

(1.6 10 19 )(10)(1016 )
= 16 A / cm 2
3
10

2
4. Assume each diode in the circuit shown in Figure 4.1 has a cut in voltage of V=
0.65 V. The input voltage is VI=5V. Determine the values of R1 required such that
ID1 is one half the value of ID2. What are the values of ID1 and ID2?

Figure 4.1
Solution:

5. For a pn junction diode, what must be the forward-bias voltage to produce a

current of 150 A when IS = 10-11 A.
Solution: