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PE Enacbe
PE Enacbe
etveropoli:
y mn = g mn + jbmn
z mn = rmn + jxmn
I1 = y U 1 + y U 2
U 1 = z 11 I 1 + z 12 I 2
U 1 = h 11 I 1 + h 12 U 2
I 2 = y U1 + y U 2
U 2 = z 21 I 1 + z 22 I 2
I 2 = h 21 I 1 + h 22 U 2
11
h mn = Re [ hmn ] + j Im [ h mn ]
21
12
22
Polprevodnik:
n = NC e
EC EF
kT
EF EV
kT
p = NV e
= ni e
= ni e
EF EFi
qU T
E Fi EF
qU T
= ni e
VFi VF
UT
= ni e
VF VFi
UT
J n = q n nE + qD n
dn
dx
n n 0 1 j n
n
=
+
t
n
q x
= q( p n + N D N A )
J p = q p pE qD p
dp
dx
p p 0 1 j p
p
=
t
p
q x
d 2V
dx 2
pn dioda:
D p pn 0 Dn n p 0
I = A J = Aq
+
e
L
Ln
p
U D = VFin VFip = U T ln
pp0
pn 0
U
UT
1 = I S e
U
UT
U
UT
p p 0 nn 0
nn 0
= U Fp + U Fn = U T ln
np0
ni2
xp =
2 N A (U D + U R )
q ND ( N A + ND )
I F = I ES e
IE = IF R IR
U EB
UT
U CB
I R = I CS e UT 1
I C 0 = I CS (1 F R )
I C = F I F + I R
I E 0 = I ES (1 F R )
Spojni FET (n kanal):
U
I DS = I DSS 1 GS
UP
I
I
=
U UT
g NF =
VF
1 + j p = g + jb
I
UT
Cd
= g NF
Cd
NF
VF
=
=
g NF p
2
g
VF
UUEB
I E = I E 0 e T 1 R I C
UCB
I C = F I E + I C 0 e UT 1
F I ES = R I CS
kT
= UT
q
CT =
y=
2 1
1
+
(U D + U R )
q NA ND
D = x p + xn =
2 N D (U D + U R )
q N A ( NA + ND )
N A >> N D & u = U F :
N N
q
U T ln A 2 D = U p + U n =
( N A x2p + N D xn2 )
ni
2
xn =
dE
=
dx
Dp
D
1 = Aqni2
+ n e
L p N D Ln N A
= U T ln
L = D
gm = 0 ge =
IC
UT
IC
IE
Ai
U CB = 0
ge =
0
=
U CB = 0
IE
UT
1+
rbe =
0
1+
jf
f
gm
= ( f )
qN D D
8
U DSsat = U GS U P
MI C 0
1 M1 M 2
tirislojna dioda:
I=
Fotodioda:
I = I S e nUT 1 + I L
ID =
I DS
C0W n
U DS
(U GS U T ) U DS
L
2
C W n 2 U GS
= 0
UT 1
2L
UT
U DSsat = U GS U T
MI C 0 + M 2 I G
1 M1 M 2
Tiristor:
I=
Fototranzistor:
IC = I B
k = 1.3810 23 J/K
q = 1.610 19 As
h = 6.62510 34 Ws2
m = 9.1110 31 kg
UT = kT/q = 25.66 mV (T = 297.8 K = 24.8 oC)
ni = 1010 cm 3 (T = 297.8 K = 24.8 oC)
0 = 8.854.10 12 As/(Vm) = 8.854.10 14 As/(Vcm)
r(Si) = 11.7 12 0 rSi = 10 12 As/(Vcm)
r(SiO2) = 3.85 4
F
1F
IC 0 + I L
1 F