Example

2.4b
Solution

Calculate the intrinsic carrier density in germanium, silicon and

gallium arsenide at 300, 400, 500 and 600 K.
The intrinsic carrier density in silicon at 300 K equals:
Eg
n i (300 K ) = N c N v exp(
)
2 kT
1.12
= 2.81 1019 1.83 1019 exp(
)
2 0.0258
= 8.72 109 cm -3
Similarly one finds the intrinsic carrier density for germanium and
gallium arsenide at different temperatures, yielding:
Germanium
Silicon
Gallium
Arsenide
300 K
2.02 x 1013
8.72 x 109
2.03 x 106
15
12
400 K
1.38 x 10
4.52 x 10
5.98 x 109
500 K
1.91 x 1016
2.16 x 1014
7.98 x 1011
17
15
600 K
1.18 x 10
3.07 x 10
2.22 x 1013