MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

OUTLINE DRAWING

BCR1AM-12

Dimensions
in mm

5.0 MAX

5.0 MAX

4.4

VOLTAGE
CLASS
TYPE
NAME

3
12.5 MIN

1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
0.7

3.9 MAX

1.3

1.25 1.25

1 3 2

IT (RMS) ........................................................................ 1A
VDRM ....................................................................... 600V
IFGT !, IRGT !, IRGT # ............................................. 5mA
IFGT # ..................................................................... 10mA

JEDEC : TO-92

APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications

MAXIMUM RATINGS
Symbol

Voltage class

Parameter

Unit

12

VDRM

Repetitive peak off-state voltage 1

600

VDSM

Non-repetitive peak off-state voltage 1

720

Conditions

Parameter

Symbol
IT (RMS)

RMS on-state current

Commercial frequency, sine full wave 360 conduction, Tc=56C 4

ITSM

Surge on-state current

60Hz sinewave 1 full cycle, peak value, non-repetitive

I2t

I2t for fusing

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

PGM

Peak gate power dissipation

PG (AV)

Average gate power dissipation

VGM

Ratings

Unit

1.0

10

0.41

A2s

0.1

Peak gate voltage

IGM

Peak gate current

Tj

Junction temperature
Storage temperature

Tstg

Weight

Typical value

40 ~ +125

40 ~ +125

0.23

1. Gate open.

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Symbol

Parameter

Limits

Test conditions

Min.

Typ.

Max.

Unit

IDRM

Repetitive peak off-state current

Tj=125C, V DRM applied

1.0

mA

VTM

On-state voltage

Tc=25C, ITM=1.5A, Instantaneous measurement

1.6

VFGT !

2.0

VRGT !

2.0

2.0

VRGT #

Gate trigger voltage 2

Tj=25C, VD =6V, RL=6, RG=330

VFGT #

2.0

IFGT !

mA

mA

mA

10

mA

0.1

50

C/ W

V/s

IRGT !
IRGT #

Gate trigger current 2

Tj=25C, VD =6V, RL=6, RG=330

IFGT #
VGD

Gate non-trigger voltage

Tj=125C, VD=1/2VDRM

R th (j-c)

Thermal resistance

Junction to case 4

(dv/dt) c

Critical-rate of rise of off-state

commutating voltage

2. Measurement using the gate trigger characteristics measurement circuit.

3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.

Voltage
class

VDRM
(V)

(dv/dt) c
Min.

Commutating voltage and current waveforms

(inductive load)

Test conditions

Unit

SUPPLY
VOLTAGE

1. Junction temperature
Tj =125C
12

600

V/s

2. Rate of decay of on-state commutating current

(di/dt)c=0.5A/ms

TIME

MAIN CURRENT

(di/dt)c
TIME

MAIN
VOLTAGE

3. Peak off-state voltage

VD =400V

TIME

(dv/dt)c

VD

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

RATED SURGE ON-STATE CURRENT

7
5
3
2

10
TC = 25C

101
7
5
3
2
100
7
5
3
2
101
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)

SURGE ON-STATE CURRENT (A)

ON-STATE CURRENT (A)

102

2
0
100

2 3 4 5 7 101

2 3 4 5 7 102

CONDUCTION TIME
(CYCLES AT 60Hz)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

PGM =
1W
PG(AV)
= 0.1W

VGM = 6V

100
7
5
IFGT I
3 IRGT I
2 IRGT III
101
7
5
3
2

IGM = 1A

IFGT III

VGD = 0.1V

102
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

100 (%)

101
7
5
3
2

GATE TRIGGER CURRENT (Tj = tC)

GATE TRIGGER CURRENT (Tj = 25C)

GATE VOLTAGE (V)

GATE CHARACTERISTICS
103
7
5
4
3
2

TYPICAL EXAMPLE

IFGT I, IRGT I

102
7
5
4
3
2

IRGT III, IFGT III

101
60 40 20 0 20 40 60 80 100 120 140

GATE CURRENT (mA)

JUNCTION TEMPERATURE (C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

TYPICAL EXAMPLE

VFGT I, VRGT I

102
7
5
4
3
2

VRGT III, VFGT III

101
60 40 20 0 20 40 60 80 100 120 140

TRANSIENT THERMAL IMPEDANCE (C/W)

103
7
5
4
3
2

102
7
5
3
2

JUNCTION TO CASE

101
7
5
3
2
100
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER

DISSIPATION

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

2.0

160

1.6

1.2

360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS

0.8

0.4

102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105

103
7
5
3
2
JUNCTION TO AMBIENT

JUNCTION TEMPERATURE (C)

0.4

0.8

1.2

1.6

RMS ON-STATE CURRENT (A)

2.0

CASE TEMPERATURE (C)

ON-STATE POWER DISSIPATION (W)

GATE TRIGGER VOLTAGE (Tj = tC)

GATE TRIGGER VOLTAGE (Tj = 25C)

100 (%)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS

140
120
100

360
CONDUCTION

80
60
40
20
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS ON-STATE CURRENT (A)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE

100

60
40
20

100 (%)

HOLDING CURRENT (Tj = tC)

HOLDING CURRENT (Tj = 25C)

RESISTIVE,
INDUCTIVE
LOADS

80

103
7
5
4
3
2

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

103
7
5
3
2
102
60 40 20 0 20 40 60 80 100 120 140

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT VS.

JUNCTION TEMPERATURE

TYPICAL EXAMPLE

103
7
5
3
2
102
7
5
3
2
101
7
5
3
2

,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION

T2+, G
TYPICAL
EXAMPLE

T2+, G+
TYPICAL
T2 , G
T2 , G+ EXAMPLE

100
60 40 20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE

TYPICAL EXAMPLE

100 (%)

JUNCTION TEMPERATURE (C)

140

160
140

120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (C)

BREAKOVER VOLTAGE (dv/dt = xV/s )

BREAKOVER VOLTAGE (dv/dt = 1V/s )

100 (%)

104
7
5
3
2

JUNCTION TEMPERATURE (C)

101
60 40 20 0 20 40 60 80 100 120 140

BREAKOVER VOLTAGE (Tj = tC)

BREAKOVER VOLTAGE (Tj = 25C)

105
7 TYPICAL EXAMPLE
5
3
2

RMS ON-STATE CURRENT (A)

102
7
5
4
3
2

160

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION
TEMPERATURE

100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
NATURAL CONVECTION
120 NO FINS

LACHING CURRENT (mA)

AMBIENT TEMPERATURE (C)

GLASS PASSIVATION TYPE

TYPICAL EXAMPLE
Tj = 125C

120
I QUADRANT

100
80
60
III QUADRANT
40
20

0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)

Feb.1999

MITSUBISHI SEMICONDUCTOR TRIAC

BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

101 1
10

2 3 4 5 7 100

2 3 4 5 7 101

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

100 (%)

101
TC = 125C
7 TYPICAL EXAMPLE
IT = 1A
5
= 500s
4
VD = 200V
3
2
III QUADRANT
MINIMUM
CHARAC100
TERISTICS
7
VALUE
5
4
I QUADRANT
3
2

GATE TRIGGER CURRENT (tw)

GATE TRIGGER CURRENT (DC)

CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/s)

COMMUTATION CHARACTERISTICS
103
7
5
4
3
2

TYPICAL EXAMPLE

102
7
5
4
3
2

IFGT I
IFGT III
IRGT III
IRGT I

101 0
10

2 3 4 5 7 101

2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (s)

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS
6

6V

6V
RG

TEST PROCEDURE 1
6

RG

TEST PROCEDURE 2
6

6V
V

RG

TEST PROCEDURE 3

6V
V

RG

TEST PROCEDURE 4

Feb.1999

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