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Package Dimensions
Description
This devices are made with PIN GaAs.
1ANODE
2CATHODE
28.0
5.8
0.5
8.7
4.9
2.54
1.5MAX
1.0
2.01.0mm
1
Tolerance
Grade
0.5~3
3~6
6~30
30~120
0.1
0.2
0.3
0.5
Chip
SPEC NO:
Lens Color
Material
Emitting Color
GaAs
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Water Clear
DATE:Jun/26/2010
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Selection Guide
Radiant Intensity(mW/sr)
IF=50mA
Part No
D+LED-LD5IR850
Viewing
Angle
Min
Typ
21/2
()
--
75
20
Note:
1. 21/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
2.Tolerance of measurement of luminous intensity15%.
Units
1.5
--
10
uA
--
850
nm
1/2
--
50
nm
Item
Symbol
Forward Voltage
VF
Reverse Current
IR
Min
Test Conditions
IF=50mA
Peak Spectral Wavelength
Spectral Bandwidth
Note:
1.Tolerance of measurement of forward voltage0.1V.
2.Tolerance of measurement of peak Wavelength2.0nm.
Symbol
IR1
Units
Power Dissipation
Pt
100
mW
DC Forward Current
IF
50
mA
iFS
300
mA
Operating Temperature
-30~80
Storage Temperature
-30~80
Note:
1.IFP ConditionsPulse Width10msec
2.Tsol Conditions3mm from the base of the epoxy bulb
SPEC NO:
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DATE:Jun/26/2010
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100
80
60
IR1
40
20
0
600
700
900
800
1000
WAVELENGTH (nm)
2.0
30
1.5
40
1.0
1.0
50
0.5
0.9
0.8
0.7
60
70
80
90
-40
-20
20
40
60
80
Spatial Distribution
Radiant Power
Relative Value at IF=20mA
60
50
40
30
20
10
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.5
2.0
1.5
1.0
0.5
0
10
20
30
40
50
60
Remarks:
If special sorting is required (e.g.binning based on forward voltage or radiant intensity/luminous flux),the typical
accuracy of the sorting process is as follows:
1. Radiant intensity/Luminous Flux:15%.
2. Forward Voltage:0.1V.
Note:Accuracy may depend on the sorting parameters.
SPEC NO:
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DATE:Jun/26/2010
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Soldering:
1. Manual Of Soldering
The temperature of the iron tip should not be higher than 300and Soldering within 3 seconds per
solder-land is to be observed.
2. DIP soldering (Wave Soldering):
Preheating:120~150,within 120~180 sec.
Operation heating:2455 within 5 sec.260(Max)
Gradual Cooling (Avoid quenching).
SPEC NO:
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DATE:Jun/26/2010
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