1

MOSFET Booster
Kevin R. Dickson

PRODECURES
1) VTN, Kn of BS 170 from Previous
Laboratory

Nsilo Greene
Frank King
Abstract The objective of this project is
to design a single stage booster amplifier
to be utilized with a guitar that sends the
signal from the guitar strings to the amp
allowing the signal to be increased or
amplified by 10 dB over the frequency
range of 20 20k Hz less than 3Vpp. The
voltage gain needed for the signal to be
amplified will be calculated by Av =
Vout/Vinput. The signal that will be sent
from the guitar will be really small this is
the reason for the need to amplify it so
that it can be sent thru another
component and heard louder. The
challenges of the project will be
determining the parameters of the
components that will give us the desired
amplification within the given constraints.
The resistor values need to be decided
that will give us the VGS needed to turn on
the BS170 MOSFET circuit.

Table 1
VTN
Kn
2) Circuit Design

1.0
50mA/V^2

Index Terms BS170 MOSFET,

Decibel, Gate Voltage, Drain Voltage,
Source
Voltage,
Saturation,
NonSaturation,
INTRODUCTION

Hand drawning of the circuit being configured.

II) Theoretical Analysis using Equation

The purpose of this part of the report is

to take the numbers from the calculations of the
circuit and build a circuit in multisimm. The
figure in multisimm should work with the
parameters of the mosfet and the calculation
figures. This step allows for changes in
components without wasting components and
time. It also allow recalculation if the goal
signal is not achieved.

ID =50mA/V2 (2.0-1.0)2 =50mA

10V = 4V + 50mA(RD +RS)
RD + RS =120
RS=120 -RD
Gm=2Kn*ID

2
250mA/V2 * 50mA =10mA/V
Av=-5[-gmRD /(1+gmRs)
5=100mA/V* RD /(1+ 100mA*Rs)
5(1+100mA*Rs)=100mA* RD
5+0.5(120- RD )=100 RD

R2
RD
Rs
Capacitors

454.5k
97.5
22.5
1F

454.4k
97.5
22.5
1F

IV) Measurement Data

1) Resistance values

65-0.5 RD = 0.1 RD
0.6 RD = 65
RD = 108.3
Rs = 120-108.3=11.7
VG = VGS + Vs

Resistor
R1
R2
RD
Rs

Listed Value
1M
470k
100
22

Measure Value
.99565M
463k
97.2
21.8

2) AC Signals for various frequencies.

Vs = ID *Rs
50mA * 11.7=.585V
VG = 2.0V + .585V= 2.585V
VG =[ R2/(R1+R2)] VDD
[R2/(R1+R2)] 10V =2.585V
10R2 = 2.585V(R1+R2)
10R2 = 2.585R1 + 2.585R2
7.415R2 = 2.585R1
R2 = 2.585/7.415R1
If R1 = 1M then R2 = 345k
Therefore R1=1M, R2=345k,
RD =108.3 and Rs =11.7.

RESULTS
III) Circuit Parameters from Calculation and
Simulation
Parameters
VGS
Id
VDS
VDD
gm
Resistors
R1

Calculation
2.0
50mA
4V
10V
100mA/V

Simulation
2.0
50mA
4V
10V
100mA/V

1M

1M

Circuit design in Multisimm, with the

measurements of the input and the output signal
at 1kHz.

CONCLUSION
After taking the figures from the
calculations and setting the parameters the goal
signal was achieved. The output AC signal is 3
times bigger than the input signal and it is 180
degrees out of phase with the input signal.

REFERENCE
[1] Microelectronics: Circuit Analysis and
Design, 4th ed., McGraw Hill, a business
unit of The McGraw Hill Companies,
Inc., New York, NY 10020.