Documente Academic
Documente Profesional
Documente Cultură
Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Chapter 4
4.1
Eg
n i2 N c N exp
(b)
kT
300
N cO N O
Eg
exp
kT
kT (eV)
200
400
600
0.01727
0.03453
0.0518
2.5 10 25
1.12 300
0.0259 T
By trial and error, T 417.5 K
_______________________________________
300
2.912 10 38
T (K)
n i2 5 10 12
(a) Silicon
n i (cm 3 )
exp
4.4
7.68 10 4
2.38 1012
9.74 10 14
200
300
At T 200 K, kT 0.0259
0.017267
eV
(b) Germanium
n i (cm 3 )
T (K)
2.16 10 10
8.60 10 14
3.82 10 16
(c) GaAs
n i (cm
200
400
600
400
300
At T 400 K, kT 0.0259
0.034533
1.38
3.28 10 9
5.72 1012
eV
7.70 10
200 1.40 10
n i2 400
_______________________________________
2
i
2 2
4.2
Plot
_______________________________________
4.3
Eg
(a) n N c N exp
kT
2
i
5 10
11
300
1.12
exp
0.0259 T 300
200
300
Eg
exp
0.034533
Eg
exp
0.017267
Eg
8 exp
3.025 10 17
0.017267
Eg
0.034533
300
2.5 10 23 2.912 10 38
1.12 300
0.0259 T
By trial and error, T 367.5 K
exp
400
300
10 2
3.025 1017
8
E g 28.9561 ln
38.1714
or E g 1.318 eV
Now
7.70 10
10
400
300
N co N o
1.318
exp
0.034533
x
x exp
kT
To find the maximum value:
Then g c f F
d g c f F 1 1 / 2
x
x
exp
dx
2
kT
so N co N o 9.41 10 cm
_______________________________________
37
1
x
x 1 / 2 exp
0
kT
kT
which yields
1
x1/ 2
kT
x
1/ 2
kT
2
2x
The maximum value occurs at
4.5
1.10
exp
ni B
kT
n i A
0.90
exp
kT
For T 200 K, kT
For T 300 K, kT
For T 400 K, kT
E Ec
0.20
kT
exp
0.017267 eV
0.0259 eV
0.034533 eV
(b)
EF E
kT
g 1 f F E E exp
ni B
0.20
6
exp
9.325 10
n i A
0
.
017267
_______________________________________
4.6
(a) g c f F
E EF
kT
E E
kT
E E exp
E F E
kT
exp
Let E E x
x
x exp
kT
To find the maximum value
Then g 1 f F
d g 1 f F
d
dx
dx
E Ec
kT
Ec E F
kT
x
x exp
0
kT
E E c exp
E E c exp
exp
kT
2
kT
2
or
kT
2
_______________________________________
E E
4.7
n E1
n E 2
E1 E c
kT
E1 E c exp
E2 Ec
kT
E 2 E c exp
where
E1 E c 4kT and E 2 E c
Then
n E1
n E 2
4kT
kT
2
kT
2
E1 E 2
kT
exp
E Fi E midgap
N
1
kT ln
2
Nc
19
1
kT ln 1.04 1019
2
2.8 10
T (K)
kT (eV)
200
0.4952 kT
( E Fi E midgap )
(eV)
0.0086
0.0171
0.0257
0.01727
0.03453
0.0518
400
600
_______________________________________
1
2 2 exp 4 2 2 exp 3.5
2
or
n E1
0.0854
n E 2
4.12
m *p
3
kT ln
m n*
4
3
0.70
0.0259 ln
4
1.21
10.63 meV
(a) E Fi E midgap
_______________________________________
4.8
(b)
Plot
_______________________________________
E Fi E midgap
3
0.0259 ln 0.75
4
0.080
43.47 meV
_______________________________________
4.9
Plot
_______________________________________
4.10
m *p
3
E Fi E midgap kT ln
m n*
4
*
*
Silicon: m p 0.56m o , m n 1.08m o
E Fi E midgap 0.0128 eV
4.13
Let g c E K constant
Then
no
m 0.55m o
*
n
E Fi E midgap 0.0077 eV
_______________________________________
4.11
E f F E dE
1
dE
E EF
E c 1 exp
kT
E Fi E midgap 0.0382 eV
Germanium: m *p 0.37 m o ,
m n* 0.067 m o
Ec
Ec
Let
E EF
dE
kT
exp
E Ec
so that
kT
We can write
dE kT d
E E F Ec EF E Ec
so that
Ec E F
E EF
exp
exp
kT
kT
exp
Ec E F
kT
n o K kT exp
which becomes
no
C1
E f F E dE
E EF
E c 1 exp
kT
E E
We have
dE
dE kT d
We can write
r1
m
r o*
ao
m
E EF
dE
kT
E Ec
so that
kT
Ec E F
kT
r1 15.4 A
The ionization energy can be written as
2
m * o
13.6 eV
E
m o s
0.55
13.6 E 0.029 eV
16 2
exp
Ec
Let
4.15
for E E c
E Ec
_______________________________________
Ec
n o C1 kT exp
exp d
_______________________________________
exp d exp 1
So
Ec EF
kT
4.14
Let g c E C1 E E c
Then
We find that
n o K kT exp
C1
kT exp kT d
E E F E Ec Ec E F
_______________________________________
4.16
We have
r1
m
r o*
ao
m
Then
n o C1 exp
Ec
o
1
0.53 104 A
0.067
r1 13.1
Ec EF
kT
E Ec
E E c exp
dE
kT
or
Ec EF
kT
n o C1 exp
m*
mo
or
13.6
0.067
13.1 2
13.6
E 0.0053 eV
_______________________________________
po
ni
Nc
(a) E c E F kT ln
no
2.8 10
0.0259 ln
15
7 10
0.2148 eV
E
E
(b)
F
E g Ec E F
1.12 0.2148 0.90518
19
eV
E F E
kT
1.04 10
19
2 10 16
10
1.5 10
0.365 eV
0.0259 ln
_______________________________________
4.19
Nc
2.8 10 19
5
2 10
0.0259 ln
0.90518
exp
0.0259
6.90 10 3 cm
(d) Holes
(a) E c E F kT ln
no
p o N exp
(c)
(d) E Fi E F kT ln
4.17
0.8436 eV
E F E E g E c E F
1.12 0.8436
E F E 0.2764 eV
no
(b)
(e) E F E Fi kT ln
ni
7 1015
0.0259 ln
10
1.5 10
0.338 eV
_______________________________________
0.27637
p o 1.04 1019 exp
0.0259
2.414 10 14 cm 3
(c) p-type
_______________________________________
4.20
4.18
N
(a) E F E kT ln
po
375
0.032375 e
300
(a) kT 0.0259
1.04 1019
0.0259 ln
16
2 10
0.162 eV
(b) E c E F E g E F E
0.958
19
3/ 2
375
300
n o 4.7 1017
0.28
0.032375
exp
1.15 10 14 cm
E F E E g E c E F 1.42 0.28
1.14 eV
375
300
3/2
p o 7 10 18
1.14
0.032375
exp
4.99 10 3 cm
(b)
4.7 10 17
14
1.15 10
E c E F 0.0259 ln
0.2154 eV
0.28
1.04 10 19 exp
0.0259
2.10 10 14 cm 3
E F E E g E c E F 1.42 0.2154
1.2046 eV
E c E F E g E F E
1.12 0.28 0.84 eV
Ec E F
n o N c exp
kT
1.2046
p o 7 10 18 exp
0.0259
4.42 10 2 cm 3
_______________________________________
4.21
375
0.032375 e
300
(a) kT 0.0259
0.84
2.8 10 19 exp
0.0259
2.30 10 5 cm 3
_______________________________________
375
300
3/ 2
n o 2.8 10 19
0.28
0
.
032375
exp
6.86 10 15 cm
4.23
E F E E g E c E F 1.12 0.28
0.840 eV
p o 1.04 10
19
3/ 2
375
300
7.84 10 7 cm
E F E Fi
kT
(a) n o n i exp
0.840
exp
0
.032375
E Fi E F
kT
p o n i exp
Nc
(b) E c E F kT ln
no
2.8 10 19
15
6.862 10
0.2153 eV
E F E Fi
kT
(b) n o n i exp
p o 1.04 10
Eg
4
p o N exp
1.12
0.28 eV
4
E F E
kT
0.22
0
.0259
3
E Fi E F
kT
p o n i exp
7.04 10 3 cm 3
_______________________________________
(b) E F E
8.80 10 9 cm
0.904668
exp
0.0259
4.22
(a) p-type
1.8 10 6 exp
0.22
1.5 10 10 exp
0.0259
3.07 10 6 cm 3
0.0259 ln
0.22
1.5 10 10 exp
0.0259
7.33 10 13 cm 3
0.22
0.0259
1.8 10 6 exp
3.68 10 2 cm 3
_______________________________________
4.24
(a) E F E kT ln
p
o
0.0259 ln
15
V
5 10
(c)
0.1979 eV
0.84127
n o 4.3109 10 19 exp
E
(b)
c
F E g E F E
0.034533
0.92212
0.0259
po
ni
19
(c) n o 2.8 10 exp
9.66 10 cm
(d) Holes
3
(e) E Fi E F kT ln
po
(e) E Fi E F kT ln
ni
1.134 10 9 cm
(d) Holes
5 10 15
12
2.381 10
0.2642 eV
0.034533 ln
_______________________________________
5 10 15
0.0259 ln
10
1.5 10
0.3294 eV
4.26
_______________________________________
(a)
0.25
p o 7 1018 exp
0.0259
4.50 10 14 cm 3
4.25
400
300
1.17
0.0259
n o 4.7 10 17 exp
400
kT 0.0259
0.034533 eV
300
1.13 10 2 cm
3/ 2
N 1.04 10 19
1.601 10 19 cm
400
300
3/ 2
N c 2.8 1019
(b) kT 0.034533 eV
3
4.3109 1019 cm
1.12
0
.
034533
3
3/ 2
400
300
N c 4.7 10 17
7.236 10 17 cm
5.6702 10 24
N
(a) E F E kT ln
po
400
300
1.078 10 19 cm
exp
n i 2.381 10 12 cm
3/ 2
N 7 1018
N
po
E F E kT ln
1.601 1019
0.034533 ln
5 10 15
0.2787 eV
1.078 10 19
14
4.50 10
0.3482 eV
E c E F 1.42 0.3482 1.072
0.034533 ln
eV
n o 7.236 10 17
1.07177
exp
0.034533
Then F1 / 2
2.40 10 4 cm 3
_____________________________________
no
0.25
p o 1.04 1019 exp
0.0259
6.68 10 14 cm 3
(b) n o
eV
0.870
0.0259
n o 2.8 10 19 exp
n o 7.23 10 4 cm
400
300
1.601 10
19
3/ 2
cm
400
300
5 10 19
3
3/ 2
So
N c 2.8 1019
4.311 10
19
cm
N
po
E F E kT ln
N c F1 / 2 F
4.7 10 1.0
17
N F1 / 2 F
1.04 10 F
19
1/ 2
F1 / 2 F 4.26
E E F
E E F
kT
3.0 0.0259 0.0777
eV
_______________________________________
4.30
(a) F
E F E c 4kT
4
kT
kT
Then F1 / 2
no
F 6.0
N c F1 / 2 F
2.8 10 6.0
19
1.90 10 20 cm
4.28
For E F
0.77175
n o 4.311 10 19 exp
0.034533
8.49 10 9 cm 3
_______________________________________
(a) n o
We find F 3.0
1.601 10 19
14
6.68 10
0.3482 eV
0.034533 ln
4.29
(b) kT 0.034533 eV
19
5.30 1017 cm 3
_______________________________________
po
N 1.04 10 19
F 1.0
2
2.8 10 1.0
3.16 10 19 cm
4.27
(a)
E F E c kT 2
0. 5
kT
kT
N c F1 / 2 F
E c kT 2 ,
(b) n o
4.7 10 6.0
17
3.18 10 18 cm 3
_______________________________________
4.31
For the electron concentration
n E g c E f F E
n E
4 2m
h
* 3/2
n
3
p E
E EF
kT
4 2m
kT
Ec E F
kT
E Ec
kT
n E n x K
x exp x
p x K x exp x
dp x
0 Using the results from above,
dx
1
kT
2
_______________________________________
E E
4.32
(a) Silicon: We have
Ec E F
kT
n o N c exp
x 1 / 2 1 exp x
We can write
or
1
x
2
0 Kx 1 / 2 exp x
which yields
1 E Ec
1
E E c kT
2
kT
2
Ec E F Ec Ed Ed E F
For
E c E d 0.045 eV and
E d E F 3kT eV
we can write
0.045
n o 2.8 10 19 exp
3
0
.
0259
p E g E 1 f F E
p E
4 2m *p
h
3/ 2
E E
EF E
kT
exp
or
E E
kT
Then
exp
Then
Define
E F E
kT
3/2
Define
exp
E Ec
E Ec
exp
kT
kT
E E
E E
exp
kT
kT
kT
or
n E
E Ec
exp
* 3/ 2
n
3
4 2m *p
19
or
n o 2.45 10 17 cm
We also have
E F E
kT
p o N exp
E F E E F E a E a E
For
E F E a 3kT and
E a E 0.045 eV
Then
p o 1.04 10 19
n i 7.334 10 11 cm
0.045
exp 3
0.0259
p o N a 4 10 15 cm
no
or
p o 9.12 10 16 cm
cm
(e)
n o 4.7 10 17 exp
3
0.0259
1.12 300
0.0259 450
p o 9.20 10 cm 3
_______________________________________
4.33
Plot
_______________________________________
3 10
15
3 10 cm
15
po
7.5 10 cm
4.35
(a)
10 2
po
3 1016
1.722 10 13
1.722 10
13 2
1.029 10
14
n i2
1.8 10 6
po
3 10 15
no
2.88 1012
1.08 10 3 c
1.8 10
6 2
7.5 10 cm
3
po
3 1016
1.08 10 4 cm
(c) n o p o n i 1.5 10 10 cm
(d)
375
300
n i2 2.8 10 19 1.04 10 19
1.12 300
0.0259 375
exp
(c) n o p o n i 1.8 10 6 cm
(d)
(b) n o N d 3 10 16 cm
p o N a N d 4 10 15 1015
3 10 15 cm
1.5 10
cm 3
_______________________________________
(b) n o N d 3 1016 cm
1.029 10 14 cm
16
no
10 14
10 14
no
or
1.5 10
450
300
exp
18
10 2
7 10 exp 4.332
p o 4 15 10
n i 1.722 10 13 cm
Assume E a E 0.0345 eV
Then
0.0345
p o 7 10 18 exp
3
0.0259
15
1.34 10 8
4 1015
n i2 2.8 10 19 1.04 10 19
or
4.34
(a)
17
n o 1.87 1016 cm
7.334 10
11 2
375
300
1.42 300
0.0259 375
exp
n i 7.580 10 8 cm
p o N a 4 10 15 cm
no
7.580 10
8 2
4 10
(ii) p o N a N d 3 10 15 cm
no
1.44 10 2
15
450
300
4.37
(a) For the donor level
1.42 300
0.0259 450
nd
Nd
exp
n i 3.853 10 cm
n o N d 10 cm
14
10 2
po
10
1.48 10 7
14
(i) n o
Nd
N
d
2
2
2 10 15
or
cm 3
_______________________________________
4.36
(a) Ge: n i 2.4 10 13 cm
1
E EF
1
1 exp d
2
kT
1
0.20
1 exp
2
0.0259
3.853 10
1.08 10 3 cm
n i2 4.7 10 17 7.0 10 18
10
3 10
15
cm
(e)
1.8 10
6 2
nd
8.85 10 4
Nd
(b) We have
f F E
n i2
1 exp
1
E EF
kT
Now
2 10 15
2.4 10
13
E E F E Ec Ec E F
or
E E F kT 0.245
or
n o N d 2 1015 cm
po
n i2
2.4 1013
no
2 10 15
2.88 10 11 cm
3
2
Then
f F E
(ii) p o N a N d 10 16 7 10 15
3 10 15 cm
1.92 10 11 cm
n2
2.4 1013
no i
po
3 10 15
(b) GaAs: n i 1.8 10 6 cm
6 2
po
2 10 15
f F E 2.87 10 5
_______________________________________
4.38
(a) N a N d p-type
(b) Silicon:
1.62 10
0.245
1 exp 1
0
.0259
or
(i) n o N d 2 10 15 cm
1.8 10
cm
p o N a N d 2.5 1013 1 10 13
or
p o 1.5 10 13 cm
Then
n2
1.5 1010
no i
po
1.5 1013
no
2
1.5 10
4.40
Germanium:
po
4 10
5.625 10 4
15
cm 3
_______________________________________
cm
1.5 10
10 2
Na Nd
N Nd
a
2
2
n2
1.5 1010
no i
po
2 10 5
n i2
1.125 10 15 cm
1.5 10 13
2
1.5 10 13
2.4 10 13
or
p o 3.26 1013 cm
Then
no
n o p o n-type
_______________________________________
4.41
n i2
2.4 1013
1.76 1013 cm
po
3.264 10 13
Gallium Arsenide:
p o N a N d 1.5 10 13 cm
and
0.66
1.8936 10 24
n i 1.376 1012 cm
4.39
(a) N d N a n-type
(b)
n o N d N a 2 1015 1.2 10 15
po
no
n i2
n2
1
i n o2 ni2
p o 4n o
4
1
ni
2
n o 6.88 10 11 cm
So
Then p o 2.75 10
po
Na
N
a
2
2
10 2
2.81 10 5 cm
no
n
1.5 10
no
8 10 14
_______________________________________
2
i
250
300
exp
n2
1.8 10 6
no i
0.216 cm 3
po
1.5 1013
8 10 14 cm
2.752 10 12
cm
n i2
Na
2
Na
2
12
1.8936 10 24
Na
p o N a N a N d
4 10
15
N a 1.2 10
15
2 10
N a 4.8 10 cm
15
15
Na
2
1.8936 10 24
so that N a 2.064 10 12 cm 3
_______________________________________
4.42
Plot
_______________________________________
4.43
Plot
_______________________________________
1.5 10
10
no
5 10
4.5 10 3 cm
16
_______________________________________
4.44
Plot
_______________________________________
4.45
N Na
N Na
no d
d
2
2
1.1 1014
2 10
2 10 14 1.2 10 14
1.110
14
4 10 13
4.9 10
27
14
n i2
1.2 10
2
4.47
(a)
14
(b) p o
1.6 10
1.5 10
10 2
4 1013
27
n i2
n2
no i
no
po
no
n i2
so n i 5.74 10 13 cm
2 10
n i2
1.125 10 16 cm 3
2
i
p o 2 10 4 cm 3
holes are minority carriers
n
Nd Na
(c)
o
n i2 3.3 10 27
po
3 1013 cm
14
no
1.1 10
1.125 1016 N d 7 10 15
_______________________________________
4.46
(a)
p o n i n-type
so N d 1.825 1016 cm 3
_______________________________________
4.48
N a N d p-type
po
ni
E Fi E F kT ln
p o N a N d 3 10
16
1.5 10
16
1.5 10 cm 3
Minority carriers are electrons
16
n2
1.5 10 10
no i
po
1.5 10 16
For Germanium
T (K)
kT (eV)
200
1.5 10
400
0.01727
0.03453
600
0.0518
cm 3
(b) Boron atoms must be added
po
p o N a N a N d
Na
N
a
2
2
n i (cm
2.16 10
8.60 10 14
3.82 10 16
10
n i2 and
N a 10 15 cm
3
5 10
16
N a 3 10
16
1.5 10
16
T (K)
p o (cm
E Fi E F (eV)
1.0 10 15
1.49 10 15
3.87 10 16
200
400
600
0.1855
0.01898
0.000674
1.12
0.0259 T 300
exp
_______________________________________
4.49
Nc
(a) E c E F kT ln
Nd
Nc
no
, E c E F 0.2056 eV
, E c E F 0.1459 eV
E c E F kT ln
, E F E Fi 0.2280 eV
cm
, E F E Fi 0.2877
10 16 cm
, E F E Fi 0.3473
cm
, E F E Fi 0.4070
10
15
eV
eV
10
17
eV
_______________________________________
4.50
(a) n o
Nd
N
d
2
2
n i2
0.5 10
15 2
0.5 10 15
Nc
no
300
6.696 1019
15
1.05 10
0.5124 eV
then E c E F 0.2472 eV
(c) Closer to the intrinsic energy level.
_______________________________________
E Fi E F kT ln
n i2 2.8 10 19 1.04 10 19
E c E F 0.046318 ln
po
ni
n i2
3/ 2
4.51
so n i2 5.25 10 28
Now
536.5
300
E c E F kT ln
n o 1.05 N d 1.05 10 cm
15
6.696 1019 cm
15
1.05 10
N c 2.8 10 19
cm
For 10
2.8 1019
10 15
0.2652 eV
At T 536.5 K,
1.5 10
536.5
0.046318 eV
300
14
kT 0.0259
Nd
10
E c E F 0.0259 ln
Nd
(b) E F E Fi kT ln
ni
exp
For 10 14 cm 3 , E c E F 0.3249 eV
10 15 cm 3 , E c E F 0.2652 eV
0.0259 ln
300
12972.973
2.8 10 19
0.0259 ln
Nd
10 16 cm
10 17 cm
5.25 10 28 2.912 10 38
At T 200 K, kT 0.017267 eV
T 400 K, kT 0.034533 eV
T 600 K, kT 0.0518 eV
At T 200 K,
200
300
For N a 1014 cm
n i2 2.8 10 19 1.04 10 19
2
i
2.8 10
19
N a 1015 cm
1.04 10
16
N a 1017 cm
2
i
2.8 10
19
N
Na
For N a 10
600
300
3 10 15
eV
16
N a 1017 cm
E F E 0.1100 eV
_______________________________________
4.53
n i2
m *p
3
kT ln
m n*
4
3
0.0259 ln 10
4
(a) E Fi E midgap
3 10 15
15
cm
9.740 10 14
or
E Fi E midgap 0.0447 eV
(b) Impurity atoms to be added so
E midgap E F 0.45 eV
T 400 K, E Fi E F 0.2465
T 600 K, E Fi E F 0.0630
Then
eV
_______________________________________
E EF
p o n i exp Fi
kT
4.52
(a)
Na
ni
E Fi E F kT ln
N a 10 cm 3 ,
E F E 0.1697 eV
E F E 0.2293 eV
3.288 10
cm
N a 1015 cm
n i 9.740 10 14 cm 3
At T 200 K and T 400 K,
p o N a 310 15 cm 3
At T 600 K,
Na
N
a
2
2
14
7.0 1018
Na
0.0259 ln
E F E 0.2889 eV
1.12
exp
0.0518
po
E F E kT ln
1.04 10
19
(b)
1.12
0
.
034533
n i 2.381 10 cm
At T 600 K,
E Fi E F 0.6408 eV
exp
12
N a 10 cm 3 ,
E F 0.5811 eV
E Fi
400
300
E Fi E F 0.5215 eV
19
E Fi E F 0.4619 eV
1.12
exp
0.017267
n i 7.638 10 4 cm
At T 400 K,
1.8 10
Na
6
0.4947
10 5 exp
0.0259
0.0259 ln
or
p o N a 1.97 10 13 cm 3
_______________________________________
4.54
0.13346
0.0259
Ec E F
n o N d N a N c exp
kT
so
0.215
N d 5 10 15 2.8 10 19 exp
0.0259
5 10 15 6.95 10 15
or
N d 1.2 1016 cm 3
_______________________________________
Nc
Nd
(i) E c E F kT ln
N d 10 15
N d 1.718 10 15 cm 3
Additional
donor atoms
_______________________________________
4.56
(a) E Fi E F kT ln
N
a
1.04 1019
16
2 10
0.1620 eV
0.2188
eV
(ii)
Ec E F
N d N c exp
kT
Nc
(b) E F E Fi kT ln
N
d
2.8 1019
16
2 10
0.0259 ln
V
(c) For part (a);
p o 2 10 16 cm
1.125 10 4 cm
15
N d 1.031 1016 cm 3
Additional
donor atoms
(b) GaAs
4.7 1017
0
.
0259
ln
(i) c
F
10 15
0.15936 eV
(ii)
E c E F 0.15936 0.0259 0.13346
eV
0.1876 e
0.1929
0.0259
N d 1.631 10 16 cm
n2
1.5 1010
no i
po
2 10 16
N d 6 10
2.8 1019
15
6 10
0.0259 ln
0.0259 ln
4.55
(a) Silicon
eV
2.718 10 15 cm
n o 2 1016 cm
n2
1.5 1010
po i
no
2 10 16
1.125 10 4 cm 3
_______________________________________
4.57
E F E Fi
kT
n o n i exp
0.55
1.8 10 6 exp
0.0259
3.0 1015 cm 3
no N d N a
3 10
15
7 10
15
7.0 10 18
15
3 10
Na
N a 4 10 cm
_______________________________________
V
(b)
4.58
E F E 0.0259 ln
15
po
(a) E Fi E F kT ln
ni
0.0259 ln
0.2009 e
7.0 10 18
4
1.08 10
1.360 eV
(c) E F E 0.0259 ln
3 10
0.0259 ln
10
1.5 10
15
0.3161 e
7.0 10 18
6
1.8 10
0.7508 eV
375
300
(d) E F E 0.0259
no
(b) E F E Fi kT ln
ni
ln
3 10 16
0.0259 ln
10
1.5 10
0.3758 e
V
(c) E F E Fi
4 10 15
0.2526 eV
450
300
(e) E F E 0.0259
ln
1.48 10 7
1.068 eV
_______________________________________
po
ni
(d) E Fi E F kT ln
4 10 15
375
ln
11
300
7.334 10
0.2786 eV
0.0259
(e) E F E Fi kT ln
ni
1.029 10 14
450
ln
13
300
1.722 10
0.06945 eV
0.0259
4.60
n-type
_______________________________________
no
ni
E F E Fi kT ln
(a) E F E kT ln
po
1.125 10 16
0.0259 ln
4.59
1.5 10 10
0.3504 e
V
______________________________________
4.61
5.08 10
15
5 10 15
Replace As atoms
5 10
2
5.08 10
2.5 10 15
2.5 10
15
15
acceptor
n i2
(b) N a N d p-type
(c)
p o N a N d 6.65 10 15 3.5 10 14
n i2 4.064 10 29
6.3 10 15 cm
Eg
ni2 N c N exp
kT
350
kT 0.0259
0.030217 eV
300
350
300
1.633 10
350
300
N 1.8 10 19
6.3 10 15
6
1.8 10
0.0259 ln
2.45 10 19 cm
Eg
0.030217
So
4.064 10 29
E g 0.030217 ln
E g 0.6257 eV
_______________________________________
4.62
(a) Replace Ga atoms
Silicon acts as a
0.5692 e
V
_______________________________________
Now
exp
po
ni
(d) E Fi E F kT ln
2
19
n i2
1.8 10 6
no
5.14 10 4 c
15
po
6.3 10
N a 0.95 7 10 15 6.65 10 15 cm
6.6564 10 30 6.25 10 30 n i2
N c 1.2 10
Silicon acts as an
15
n i2
19