SEMICONDUCTOR

KHB9D5N20P/F/F2

TECHNICAL DATA

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

General Description

KHB9D5N20P
A

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switch mode power supplies.

O
C
F

DIM MILLIMETERS
_ 0.2
9.9 +
A

G
B

15.95 MAX
1.3+0.1/-0.05
_ 0.1
0.8 +
_ 0.2
3.6 +
_ 0.1
2.8 +
3.7
0.5+0.1/-0.05
1.5
_ 0.3
13.08 +

D
E

P
M

F
G

FEATURES

VDSS=200V, ID=9.5A

Drain-Source ON Resistance

1.46

_ 0.1
1.4 +
_ 0.1
1.27 +
_ 0.2
2.54 +
_
4.5 + 0.2
_ 0.2
2.4 +
_ 0.2
9.2 +

: RDS(ON)=400m @VGS = 10V

N
O

Qg(typ.)=18.5nC

1. GATE
2. DRAIN
3. SOURCE

TO-220AB

MAXIMUM RATING (Tc=25)

KHB9D5N20F

RATING

KHB9D5N20F UNIT
KHB9D5N20P
KHB9D5N20F2

SYMBOL

CHARACTERISTIC

Gate-Source Voltage

VGSS

30

@TC=25

ID

9.5

9.5*

Pulsed (Note1)

IDP

38

38*

Drain Power
Dissipation

Tc=25

180

mJ

EAR

8.7

mJ

PD

Derate above25

Maximum Junction Temperature

Storage Temperature Range

D
N

5.5

_ 0.2
10.16 +
_ 0.2
15.87 +
_ 0.2
2.54 +
_ 0.1
0.8 +
_ 0.1
3.18 +
_ 0.1
3.3 +
_
12.57 + 0.2
_ 0.1
0.5 +
13.0 MAX
_ 0.1
3.23 +
1.47 MAX
1.47 MAX
_ 0.2
2.54 +
_ 0.2
6.68 +

EAS

dv/dt

MILLIMETERS

A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R

V/ns

87

40

0.7

0.32

W/

Tj

150

Tstg

-55150

Thermal Characteristics

_ 0.2
4.7 +
_ 0.2
2.76 +

1. GATE
2. DRAIN
3. SOURCE

TO-220IS (1)
KHB9D5N20F2
A

C
F

Single Pulsed Avalanche Energy

(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
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(Note 3)

Drain Current

DIM
G

200

VDSS

Drain-Source Voltage

1.44

3.13

/W

Thermal Resistance, Junction-toAmbient

RthJA

62.5

62.5

/W

E
B

RthJC

* : Drain current limited by maximum junction temperature.

Thermal Resistance, Junction-to-Case

PIN CONNECTION

M
D

D
N

MILLIMETERS

A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S

_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
3.2 +
_ 0.3
3.0 +
_ 0.3
12.0 +
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
0.5 Typ

1. GATE
2. DRAIN
3. SOURCE

TO-220IS

2008. 12. 19

DIM

Revision No : 2

1/7

KHB9D5N20P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25)
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

200

0.19

V/

Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient

BVDSS
BVDSS/Tj

ID=250A, VGS=0V
ID=250A, Referenced to 25

Gate Threshold Voltage

Vth

VDS=VGS, ID=250A

2.0

4.0

Drain Cut-off Current

IDSS

VDS=200V, VGS=0V,

Gate Leakage Current

IGSS

VGS=30V, VDS=0V

100

nA

RDS(ON)

VGS=10V, ID=4.75A

345

400

gFS

VDS=40V, ID=4.75A

6.7

18.5

23

2.7

Drain-Source ON Resistance
Forward Transconductance

(Note4)

Dynamic
Qg

Total Gate Charge

VDS=160V, ID=9.5A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay time

td(on)

11

32

62

135

46

102

tr

Turn-on Rise time

td(off)

Turn-off Delay time

VGS=10V

(Note4, 5)

VDD=100V, RG=25
ID=9.5A

(Note4, 5)

ns

Turn-off Fall time

tf

80

170

Input Capacitance

Ciss

387

503

Output Capacitance

Coss

96

125

Reverse Transfer Capacitance

Crss

34

45

9.5

38

VDS=25V, VGS=0V, f=1.0MHz

nC

pF

Source-Drain Diode Ratings

Continuous Source Current

IS

Pulsed Source Current

ISP

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VGS<Vth

Diode Forward Voltage

VSD

IS=9.5A, VGS=0V

1.5

Reverse Recovery Time

trr

IS=9.5A, VGS=0V,

130

ns

Reverse Recovery Charge

Qrr

dIs/dt=100A/s

0.6

(Note 4)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25, Starting Tj=25.
Note 3) IS 9.5A, dI/dt300A/, VDDBVDSS, Starting Tj=25.
Note 4) Pulse Test : Pulse width 300, Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.

2008. 12. 19

Revision No : 2

2/7

KHB9D5N20P/F/F2

Fig2. ID - VGS

VGS
TOP : 15.0 V
10.0 V
8.0 V
1
10
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V

VDS = 40V
250s Pulse Test

Drain Current ID (A)

Drain Current ID (A)

Fig1. ID - VDS

10

10

150 C

10

25 C
-55 C

-1

10

-1

-1

10

10

10

10

Drain - Source Voltage VDS (V)

On - Resistance RDS(ON) ()

Normalized Breakdown Voltage BVDSS

2.0

VGS = 0V
IDS = 250A

1.0

0.9

1.5

1.0

0.5
VGS = 20V

50

100

150

20

Fig6. RDS(ON) - Tj

Normalized On Resistance

Reverse Drain Current IS (A)

15

Fig6. IS - VSD

10

25 C

-1

0.4

10

Drain Current ID (A)

10

150 C

Junction Temperature Tj ( C)

3.0

0.6

0.8

1.0

1.2

1.4

Source - Drain Voltage VSD (V)

2008. 12. 19

VGS = 10V

0.8

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-100
-50

0.2

10

Fig5. RDS(ON) - ID

1.1

10

Gate - Source Voltage VGS (V)

Fig4. BVDSS - Tj
1.2

Revision No : 2

1.6

1.8

2.5

25

30

VGS = 10V
IDS = 5A

2.0
1.5
1.0
0.5
0.0
-100

-50

50

100

150

Junction Temperature Tj ( C)

3/7

KHB9D5N20P/F/F2

Fig8. Qg- VGS

Fig7. C - VDS
2500

Gate - Source Voltage VGS (V)

Capacitance (pF)

2000

Ciss

1500
Coss

1000

Crss

500
0

12 I = 9.5A
D

Frequency =1MHz

10-1

100

10

VDS = 50V
VDS = 125V

VDS = 200V

6
4
2
0

101

Drain - Source Voltage VDS (V)

Drain Current ID (A)

Drain Current ID (A)

102

100s

1ms

10-1

10ms
100ms
DC

TC= 25 C
Tj = 150 C
Single nonrepetitive pulse
0

10

10

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20

(KHB9D5N20F, KHB9D5N20F2)

Operation in this
area is limited by RDS(ON)

100

15

Fig10. Safe Operation Area

(KHB9D5N20P)

101

10

Gate - Charge Qg (nC)

Fig9. Safe Operation Area

102

Operation in this
area is limited by RDS(ON)

100 s

101

1 ms

100

10 ms
100 ms

TC= 25 C
Tj = 150 C
-1 Single nonrepetitive pulse

10

10

Drain - Source Voltage VDS (V)

100

101

DC
2

10

Drain - Source Voltage VDS (V)

Fig11. ID - Tj
12

Drain Current ID (A)

10
8
6
4
2
0
25

50

75

100

125

150

Junction Temperature Tj ( C )

2008. 12. 19

Revision No : 2

4/7

KHB9D5N20P/F/F2

Normalized Transient Thermal Resistance

Fig12. Transient Thermal Response Curve

(KHB9D5N20P)

100
Duty=0.5

0.2

10-1

PDM

0.1

t1

0.05

t2
0.02
0.01

- Duty Factor, D= t1/t2

- Rthjc=1.44

Single Pulse

10-2
10-5

10-4

10-3

10-2

10-1

100

101

TIME (sec)

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Normalized Transient Thermal Resistance

Fig13. Transient Thermal Response Curve

(KHB9D5N20F, KHB9D5N20F2)
100
Duty=0.5

0.2

10-1

0.1

PDM

0.05

t1

0.02

t2

0.01

- Duty Factor, D= t1/t2

- Rthjc=3.13

Single Pulse

10-2
10-5

10-4

10-3

10-2

10-1

100

101

TIME (sec)

2008. 12. 19

Revision No : 2

5/7

KHB9D5N20P/F/F2

Fig14. Gate Charge

VGS
10 V

Fast
Recovery
Diode

ID

ID

0.8 VDSS
1.0 mA

VDS

Q
Qgs

VGS

Fig15. Single Pulsed Avalanche Energy

EAS=

Qgd
Qg

1
LIAS2
2

BVDSS
BVDSS - VDD

BVDSS

IAS

0.5 VDSS
ID(t)

25
VDS

VDD
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10 V

VDS(t)

VGS
tp

2008. 12. 19

Revision No : 2

Time

6/7

KHB9D5N20P/F/F2

Fig16. Resistive Load Switching

VDS
RL

90%

0.5 VDSS
25

10V

VDS

VGS 10%

tf
td(on)

VGS

tr

td(off)
toff

ton

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

Body Diode Forword Current
DUT
VDS

ISD
(DUT)

di/dt

IF

IRM
Body Diode Reverse Current

IS

0.8 x VDSS
driver

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

10V

VGS

VDD

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Body Diode Forword Voltage drop

2008. 12. 19

Revision No : 2

7/7