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- TDD- D A Y A

RoHS

TO-92 Plastic-Encapsulate Transistors

COMPLIANCE

13001

TRANSISTOR (NPN)
TO-92

FEATURES
power switching applications

1. BASE

2. COLLECTOR

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol

Parameter

3. EMITTER

Value

Units

VCBO

Collector -Base Voltage

600

VCEO

Collector-Emitter Voltage

400

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

0.2

PC

Collector Power Dissipation

0.75

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100A , IE=0

600

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA , IB=0

400

Emitter-base breakdown voltage

V(BR)EBO

IE= 100A, IC=0

Collector cut-off current

ICBO

VCB= 600V , IE=0

100

Collector cut-off current

ICEO

VCE= 400V, IB=0

200

Emitter cut-off current

IEBO

VEB=

100

hFE(1)

VCE= 20V, IC= 20mA

10

hFE(2)

VCE= 10V, IC= 0.25 mA

DC current gain

7V, IC=0

40

Collector-emitter saturation voltage

VCE(sat)

IC= 50mA, IB= 10 mA

0.5

Base-emitter saturation voltage

VBE(sat)

IC= 50 mA, IB= 10mA

1.2

Transition frequency

fT

Fall time

tf

Storage time

tS

CLASSIFICATION OF hFE(1)
Range

10-25

20-30

25-35

VCE= 20V, IC=20mA

f = 1MHz
VCC=45V, IC=50mA
IB1= -IB2=5mA

MHz
0.3

1.5

- TDD- D A Y A
-

13001

RoHS
COMPLIANCE