FDC610PZ

tm

P-Channel PowerTrench MOSFET

30V, 4.9A, 42m
Features

General Description

Max rDS(on) = 42m at VGS = 10V, ID = 4.9A

This P-Channel MOSFET is produced using Fairchild

Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.

Max rDS(on) = 75m at VGS = 4.5V, ID = 3.7A

Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM 6 package: small footprint (72% smaller than
standard SO8) low profile (1mm thick).

Application

RoHS Compliant

DC - DC Conversion

S
D

33

G
D
D

Pin 1

SuperSOTTM -6

MOSFET Maximum Ratings TA= 25C unless otherwise noted

Symbol
VDS

Drain to Source Voltage

Parameter

VGS

Gate to Source Voltage

Drain Current

ID

-Continuous

Ratings
30

Units
V

25

(Note 1a)

4.9

-Pulsed

PD
TJ, TSTG

20

Power Dissipation

(Note 1a)

1.6

Power Dissipation

(Note 1b)

0.8

Operating and Storage Junction Temperature Range

55 to +150

W
C

Thermal Characteristics
RJA

Thermal Resistance, Junction to Ambient

(Note 1a)

78

RJA

Thermal Resistance, Junction to Ambient

(Note 1b)

156

C/W

Package Marking and Ordering Information

Device Marking
.610Z

Device
FDC610PZ

2007 Fairchild Semiconductor Corporation

FDC610PZ Rev.B

Package
SSOT6

Reel Size
7

Tape Width
8mm

Quantity
3000units

www.fairchildsemi.com

FDC610PZ P-Channel PowerTrench MOSFET

August 2007

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS

Drain to Source Breakdown Voltage

ID = 250A, VGS = 0V

BVDSS
TJ

Breakdown Voltage Temperature

Coefficient

30

ID = 250A, referenced to 25C

IDSS

Zero Gate Voltage Drain Current

VDS = 24V, VGS = 0V

IGSS

Gate to Source Leakage Current

VGS = 25V, VDS = 0V

10

22

mV/C

On Characteristics
VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250A

VGS(th)
TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250A, referenced to 25C

VGS = 10V, ID = 4.9A

36

42

rDS(on)

Static Drain to Source On Resistance

VGS = 4.5V, ID = 3.7A

58

75

VGS = 10V, ID = 4.9A, TJ = 125C

50

60

VDD = 10V, ID = 4.9A

15

gFS

Forward Transconductance

2.2

mV/C

m
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate Resistance

VDS = 15V, VGS = 0V,

f = 1MHz
f = 1MHz

755

1005

pF

145

195

pF

125

190

pF

13

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

VGS = 0V to 10V

Qg

Total Gate Charge

VGS = 0V to 4.5V

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain Miller Charge

VDD = 15V, ID = 4.9A

VGS = 10V, RGEN = 6

VDD = 15V,
ID = 4.9A

14

ns

10

ns

33

53

ns

23

37

ns

17

24

nC

13

nC

2.9

nC

4.3

nC

Drain-Source Diode Characteristics

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

1.3
(Note 2)

IF = 4.9A, di/dt = 100A/s

0.8

1.2

19

35

ns

18

nC

Notes:
1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
a. 78C/W when mounted on a
1 in2 pad of 2 oz copper.

b. 156C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.

FDC610PZ Rev.B

www.fairchildsemi.com

FDC610PZ P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted

5.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

20

-ID, DRAIN CURRENT (A)

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX
VGS = -10V

15

VGS = -5V
VGS = -4.5V

10
VGS = -4V

5
VGS = -3.5V

4.5
4.0

VGS = -4V

3.5
3.0

VGS = -4.5V

2.5
2.0

VGS = -5V

1.5
1.0
0.5

VGS = -10V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rDS(on), DRAIN TO

0.8

SOURCE ON-RESISTANCE (m)

NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE

1.0

-50

-IS, REVERSE DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

VDD = -5V

10
TJ = 150oC
TJ = 25oC
TJ = -55oC

100
TJ = 125oC

50
TJ = 25oC

20
10

1
TJ = 150oC

0.1
TJ = 25oC

0.01
TJ = -55oC

1E-3
0.0

VGS = 0V

0.2

0.4

0.6

0.8

1.0

-VGS, GATE TO SOURCE VOLTAGE (V)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDC610PZ Rev.B

10

Figure 4. On-Resistance vs Gate to

Source Voltage

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX

150

-VGS, GATE TO SOURCE VOLTAGE (V)

20

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX

ID = -4.9A

-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Normalized On- Resistance

vs Junction Temperature

15

20

200

1.2

0.6
-75

15

Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

ID = -4.9A
VGS = -10V

1.4

10

-ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics

1.6

PULSE DURATION = 80s

DUTY CYCLE = 0.5%MAX

VGS = -3.5V

1.2

www.fairchildsemi.com

FDC610PZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

2000
ID = -4.9A

Ciss

1000

8
VDD = -10V

CAPACITANCE (pF)

-VGS, GATE TO SOURCE VOLTAGE(V)

10

VDD = -15V

VDD = -20V

4
2

Coss

Crss

100

12

16

50
0.1

20

Figure 7. Gate Charge Characteristics

10

30

Figure 8. Capacitance vs Drain

to Source Voltage

10

30
VDS = 0V

10

10
-ID, DRAIN CURRENT (A)

-Ig, GATE LEAKAGE CURRENT(uA)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE(nC)

10

10

TJ =

10

150oC

10

-1

10

TJ = 25oC

100us

1ms

10

15

20

25

30

TA = 25 C

1s

THIS AREA IS
LIMITED BY rDS(on)

10s
DC

0.01
0.1

35

100ms

RJA = 156oC/W

0.1

10

-3

10ms

SINGLE PULSE
TJ = MAX RATED

-2

10

f = 1MHz
VGS = 0V

-VGS, GATE TO SOURCE VOLTAGE (V)

10

100

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 9. Gate Leakage Current vs Gate to

Source Voltage

Figure 10. Forward Bias Safe

Operating Area

1000
P(PK), PEAK TRANSIENT POWER (W)

VGS = -10V

SINGLE PULSE
RJA = 156oC/W
TA = 25oC

100

10

1
0.5
-4
10

-3

10

-2

10

-1

10

10

10

10

10

t, PULSE WIDTH (s)

Figure 11. Single Pulse Maximum Power Dissipation

FDC610PZ Rev.B

www.fairchildsemi.com

FDC610PZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

NORMALIZED THERMAL
IMPEDANCE, ZJA

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5
0.2
0.1
0.05
0.02
0.01

PDM

t1
t2

0.01

NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA

SINGLE PULSE
o

RJA = 156 C/W

1E-3
-4
10

-3

10

-2

10

-1

10

10

10

10

10

t, RECTANGULAR PULSE DURATION (s)

Figure 12. Transient Thermal Response Curve

FDC610PZ Rev.B

www.fairchildsemi.com

FDC610PZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted

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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Advance Information

Formative or In Design

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Definition

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve
design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31

2007 Fairchild Semiconductor Corporation

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