ANNA UNIVERSITY TIRUCHIRAPPALLI

TIRUCHIRAPPALLI - 620 024

REGULATION-2007

B.E-ELECTRONICS AND COMMUNICATION ENGG

FIRST YEAR ELECTRONICS LAB MANUAL

(COMMON FOR ECE, CSE IT)

J.J. COLLEGE OF ENGINEERING & TECHNOLOGY

AMMAPETTAI, POOLANGULATHUPATTI (PO)
TRICHIRAPALLI-620009
 LIST OF EXPERIMENTS:

1. Characteristics of PN junction diode

2. Characteristics of Zener diode

3. Characteristics of JFET

4. Characteristics of UJT

5. Characteristics of SCR

6. Characteristics of Photo Diode

7. Characteristics of Phototransistor

8. Characteristics of DIAC

9. Characteristics of TRIAC

10. Characteristics of BJT in CE Configuration

11. Common base configuration

EX.NO:1 CHARACTERISTICS OF PN JUNCTION DIODE

AIM:
To study the characteristics of PN junction diode under forward bias condition
and reverse bias condition.

COMPONENTS:

1. PN junction diode IN4001

2. Resistor 1kΩ
3. Voltmeter (0-2)V, (0-30)V
4. Ammeter (0 – 50)MA , (0-500)µA
5. DCPS
6. Bread board
7. Connecting wires

THEORY:
PN junction diode is a two-terminal device. The P and N junctions are referred to
as anode and cathode respectively. A PN junction diode is a one way device offering low
resistance. When forward biased and behaving as an insulator when reverse biased.
Forward bias:
When a semiconductor diode is under forward bias condition, the anode of the
diode is connected to the positive terminal of battery and the cathode of diode is
connected to negative terminal of the battery.
Reverse Bias
Here the anode of the diode is connected to the negative terminal of battery and
cathode of the diode is connected to positive terminal of the battery.
PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Input voltage is varied and the corresponding readings of voltmeter and
ammeter
3. For reverse bias the polarity of the diode is reverse and the millimeter is
replaced by a micro ammeter
4. For the tabulated readings the forward and reverse characteristics of the PN
junction diode are drawn with voltage X- axis and current on Y- axis.

RESULT :
Thus the value of reverse saturation current was studied under forward and
reverse bias condition in PN junction diode.
EX.NO:2 CHARACTERISTICS OF ZENER DIODE

AIM:

To study the characteristics of Zener diode under forward bias condition and
reverse bias condition
COMPONENTS:

1. Zener Diode Z 6.8

2. Resistor 560Ω
3. Voltmeter (0-10)V, (0-30)V
4. Ammeter (0 – 50)MA , (0-100)mA
5. DCPS
6. Bread board
7. Connecting wires
THEORY:
Zener diode is heavily doped PNP junction diode. The zener diode is normally
operated in its reverse biased breakdown region, where the voltages across the device
remain constant as the reverse current varies over a large range. Like a fixed voltage
some , this ability to maintain a constant voltage across its terminals, independent of
current makes the device useful as a voltage is called zener voltage.
Forward bias :
When the zener diode is forward biased, the forward current increases with
increase in applied voltage bias condition of ordinary PN junction diode.
Reverse bias:
When the diode is reverse biased a small reverse current called reverse saturation
current starts increasing rapidly with no change in the voltage Vz

PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. Input voltage is varied and the corresponding readings of voltmeter and
ammeter
3. For reverse bias the polarity of the diode is reverse and the millimeter is
replaced by a micro ammeter
4. For the tabulated readings the forward and reverse characteristics of the PN
junction diode are drawn with voltage X- axis and current on Y- axis.

RESULT :
Thus the value of reverse saturation current was studied under forward and
reverse bias condition in zener diode.
EX.NO:3 CHARACTERISTICS OF JFET

AIM:
To draw the drain and transfer characteristics of JFET.

COMPONENTS:

1. JFET BFW10
2. Voltmeter (0-39)v,(0-10)v
3. Ammeter (0-50)ma
4. DCPS
5. Bread board
6. Connecting wires

THEORY:
The field effect transistor like bipolar junction transistor is a three terminal
semiconductor device. It is called unipolar device because the current through it results
from the flow of only one of the two kinds of charge carriers namely holes or electrons
whichever is the majority carriers.
PROCEDURE:
If a battery Vds is connected across the channel , the electrons in the n- channel
move towards the positive terminal of the battery.

Drain control characteristics:

Keeping the voltage between gate and source (Vgs) constant, the drain source
voltage (Vds) is varied and the corresponding values of Vds and drain current (Id) are
noted drawn. This is repeated for different constant values of Vgs. A graph is drawn
between Vds and Id for different constant values of Vgs. This gives the drain
characteristics. The slope of the characteristics given, drain resistance of JFET

Transfer characteristics:
Keeping Vds constant, Vgs is varied and the corresponding values of Vgs and Id
are noted down. This is repeated for different constant values of Vds. A graph is drawn
between Vgs and Id for different values of Vds. This gives the transfer characteristics
from the transfer characteristics. The Trans conductance of JFET is determined.

RESULT:
Thus JFET has a very high input resistance and amplification factor greater than
unity.
EX.NO:4 CHARACTERISTICS OF UJT

AIM:
To draw the emitter characteristics of UJT and to determine intrinsic stand off
ratio.

COMPONENTS:
Power supply (0-30)v
Ammeter (0-50) m A
Voltmeter (0-30) v,(0-10)v
UJT ZN2646
Resistor 22kΩ
FORMULA:
Intrinsic Stand Off Ratio η = Vp-Vd./VB1.VB2
Where V p=peak voltage
V d=diode forward voltage(v)
VB1B2=Voltage across the terminals B1 and B2.
THEORY:
It is a three terminal semiconductor switching device. There are one emitter and
two bases. The emitter is heavily doped, it is a p-region having two many holes .It is
diffused in n-region which is lightly doped.
PROCEDURE:
To determine the emitter characteristics of UJT, VB1,VB2 are kept constant and
voltage across B1 and Vet is varied and emitter current (Ie) is noted. A graph is drawn by
taking Ie along x-axis and Vbe along y-axis. From the characteristics curve intrinsic stand
off ratio is calculated.

RESULT:
Thus the intrinsic stand off ratio is calculated from emitter characteristics of UJT
EX.NO:5 CHARACTERISTICS OF SCR

AIM:
To draw the characteristics of SCR and to calculate gate current(IG)

COMPONENTS:
Power supply (0-30)v-2
Resistor 1KΩ-2
Ammeter (0-50) m A-2
SCR-1
Voltmeter (0-30) v -1

THEORY:

SCR acts as a switch when it is forward biased when the gate is kept open
IG=0.Operation of SCR is similar to PN diode .When IG>0, the amount of reverse
Bias applied.I2 decreased very low voltage such that the characteristics of SCR is similar
to that of of ordinary PN diode.
Once the SCR is turned ON , the gate loses control the gate cannot be used to
switch the device off.
PROCEDURE:

1. Connections are made as shown in the circuit diagram.

2. Power supply and voltage to gate is increased to make the voltmeter reading
zero.
3. The voltmeter is used to get supply and it is increased
4. The corresponding voltmeter and ammeter readings are noted.
5. A graph is plotted by taking voltage along x-axis and current along Y- axis.

Result:
Thus the firing characteristics of SCR and the calculations of gate current are
studied.
EX.NO:6 CHARACTERISTICS OF PHOTO DIODE

AIM:
To determine the characteristics of photo diode.
Components:
Photo diode
Voltmeter (0-10) v
Ammeter (0-25) ma
Resistor 1kΩ
DCPS
Connecting wires
Lamp
Theory
Photo diode consists of PN diode embedded in clear plastic. It is constructed so
that it can be exported to light when reverse biased, it behaves as photo conductive device
because its resistance result in a change in reverse leakage current. The reverse leakage
current is conventional diode is due to thermally generated minority carriers that are
swept at the depletion region by carrier voltage.
PROCEDURE:

1. Connections are made as shown in the circuit diagram.

2. the photo diode is reverse biased
3. the distance between the lamp and corresponding voltmeter and ammeter
readings are noted
4. this is repeated for different constant distance
5. A graph is plotted by taking voltage along x-axis and current along Y- axis.

Result :
Thus the characteristics of photo diode is plotted and verified.
EX.NO:7 CHARACTERISTICS OF PHOTOTRANSISTOR

AIM:
To determine the characteristics of photo transistor
COMPONENTS:
Phototransistor
Voltmeter (0-30)v
Ammeter (0-20)ma
Lamps
Dcps
Bread board
Connecting wires.
Theory:
The phototransistor is a much more sensitive semiconductor photo device than the
PN photodiode . the phototransistor is usually connected in a common emitter
configuration with base open and radiation is concentrated on the region near the
collector junction. The emitter junction is lightly forward biases and collector junction is
reverse biased. When there is no light and collector junction is reverse biased. When
there is no light incident on the phototransistor, the thermally generated minority carriers
constitute the reverse saturation current ICO. The collector current is given as IC =(1+B)
ICO. When B is current gain of common emitter amplifier. If light is turned on current
gain of common emitter amplifier.
Procedure:
Connections are made as shown in the circuit diagram. The distance between the
light source and the photo transistor is kept constant . the collector emitter voltage is
varied and the collector current is noted down . this is repeated for different and
phototransistor . A graph is drawn with VCE in x-axis and IC in y-axis.

Result:
The characteristics of photo transistor is drawn.
EX.NO:8 CHARACTERISTICS OF DIAC

AIM:
To study, the characteristics of DIAC.
COMPONENTS:
DIAC Db3
Voltmeter (0-300)v
Ammeter
Bread board
Connecting wires
THEORY:
A DIAC is a two terminal, three layer bi-directional device, which can be
switched from its OFF state to ON state for either polarity voltage. A DIAC is a two-
terminal, three layer bi-directional device, which can be switched from its OFF state to
ON state for either polarity of applied voltage.

The DIAC can be constructed in either npn and pnp from the two leads are
connected to p-region of silicon separated by an n-region. The structure of DIAC is very
much similar to that of a transistor.
OPERATION:
When a –ve voltage or +ve voltage is applied across the terminals of a DIAC ,
only a small leakage current. as the applied voltage is increased the leakage current will
continue to flow until the voltage reaches the break over voltage VBO.
Procedure:
Connections are made as shown in the diagram.
For applied +ve voltage less than +VBO and –ve voltage less than –VBO, small
leakage current (-+IBO) flows through the device.

the voltage +VBO and –VBO are the break down voltages and usually have a
range of 30 to 50v

Result:

When the +ve or –ve applied voltage is equal to or greater than break down
voltage, DIAC begins to conduct and the voltage drop across it becomes a few
volts. Conduction then continues until the device current drops below its holding
its holding current. Note that the break over voltage and holding current values
are identical for the forward and reverse regions of operation.
EX.NO:9 CHARACTERISTICS OF TRIAC

Aim:
To draw, VI - C characteristics of the given TRIAC
Components:
TRIAC BJT 136
DCPS (0-30)V,(0-300)V
Resistors 10k,1k,2.2k/10w
Voltmeter (0-300)v
Ammeter (0-25)ma, (0-100) ma
Bread board
Connecting wires
Theory
A TRIAC is a three terminal semiconductor device, which can control alternating
current in a load. TRIAC is an abbreviation for triode ac switch . tri- indicates that the
device has three terminals and ac means that the device controls alternating current in
either direction .
The control circuit of a TRIAC can be adjusted to pass the desired portions of
positive and negative half-cycle of a.c supply from Ө to 1800

Procedure:
Connections are made as shown in the diagram.
For applied +ve voltage less than +VBO and –ve voltage less than –VBO, small
leakage current (-+IBO) flows through the device.

the voltage +VBO and –VBO are the break down voltages and usually have a
range of 30 to 50v
Result:

When the +ve or –ve applied voltage is equal to or greater than break down
voltage, TRIAC begins to conduct and the voltage drop across it becomes a few volts.
Conduction then continues until the device current drops below its holding its holding
current. Note that the break over voltage and holding current values are identical for the
forward and reverse regions of operation
EX.NO:10 CHARACTERISTICS OF BJT IN CE CONFIGUATION

AIM:
To draw the input and output characteristics of a BJT in CE configuration.

Components:
Transistor BC 547
Voltmeter (0-3) v, (0-10) v
Ammeter (0-500)ma, (0-50)ma
Resistor 1K(2)
DCPS
Bread broad
Connecting wires

Theory:
The transistor has there regions namely emitter, base and collector. The base is
much thinner than the emitter while the collector is wider than both. The emitter is
heavily doped that it can inject a large number of charge carriers into the base. The
Base is lightly doped and very thin so it passes most of the emitter injected charge
carriers to the collector. The collector is moderated doped. The emitter base junction is
always forward biased while the collector base junction is always reversing biased.
The four parameters of a transistor configuration are input voltage , input current ,
output voltage and output current
CE configuration denoted that emitter is common to both input and output, the
input is applied across base and emitter and output is taken collector and emitter.
PROCEDURE:
1. Connections are made as shown in the circuit diagram
2. Keeping the output voltage (Vce) constant, the input power supply is varied and
the corresponding.
3. input voltage (vbe) and input current (Ib)are noted
4. the same is repeated for different constant values of output voltage (vce)
5. from the readings, the input characteristic is drawn with input voltage (Vbe) on
the x-axis and input current Next the input current (Ib) is kept constant and the
output power supply is carried and the corresponding variation in output
voltage(vce) and output current (IC) are noted . The same is repeated for different
constant values of input current (Ib)
6. from the readings the output characteristics is drawn with output current (Ic) on
y-axis and output voltage (vce) on x- axis.

Result :
Transistor with common emitter configuration has low input resistance and high
output resistance and current gain greater than unity.
input resistance=
Output resistance=
Current amplification factor=
EX.NO:11 COMMON BASE CONFIGURATION

AIM:
To draw the input and output characteristics of a BJT in CB configuration.

Components:
Transistor BC 547
Voltmeter (0-3) v, (0-10) v
Ammeter (0-500)µa, (0-50)ma
Resistor 1K(2)
DCPS
Bread broad
Connecting wires
THEORY:
Common base configuration denotes that base is common to both input and
output. The input is applied across emitter and base and output is taken across collector
and base. The input current and voltage are Ie and vbe respectively. The common base
current gain is less than or equal to unity.

The output resistance of CB circuit is very high, of the order of several tens of
kilo ohms
PROCEDURE:

1. Connections are made as shown in the circuit diagram

2. Keeping the output voltage (VCB) constant, the input power supply is varied and
the corresponding.
3. input voltage (vEB) and input current (Ie)are noted
4. the same is repeated for different constant values of output voltage (vcb)
5. from the readings, the input characteristic is drawn with input voltage (Veb) on
the x-axis and input current Next the input current (Ie) is kept constant and the
output power supply is carried and the corresponding variation in output
voltage(vcb) and output current (IC) are noted . The same is repeated for different
constant values of input current (Ie)
6. from the readings the output characteristics is drawn with output current (Ic) on
y-axis and output voltage (vcb) on x- axis.

Result :
Transistor with common base configuration has low input resistance and high
output resistance and current gain greater than unity.
input resistance=
Output resistance=
Current amplification factor=