Transistor test using an analogue multimeter

The diode test using an analogue multimeter can be extended to give a simple and straightforward confidence check for bipolar transistors. Again the test
using a multimeter only provides a confidence check that the device has not blown, but it is still very useful.
The test relies on the fact that a transistor can be considered to comprise of two back to back diodes, and by performing the diode test between the base
and collector and the base and emitter of the transistor using an analogue multimeter, the basic integrity of the transistor can be ascertained.

It should be noted that a transistor cannot be functionally replicated using two separate diodes because the operation of
the transistor depends upon the base which is the junction of the two diodes, being one physical layer, and also very thin.

Step by step instructions:

The instructions are given primarily for an NPN transistor as these are the most common types in use. The variations are shown for PNP varieties - these are
indicated in brackets (.. .. ..):

1. Set the meter to its ohms range - any range should do, but the middle ohms range if several are available is probably best.
2. Connect the base terminal of the transistor to the terminal marked positive (usually coloured red) on the multimeter
3. Connect the terminal marked negative or common (usually coloured black) to the collector and measure the resistance. It should read open circuit
(there should be a deflection for a PNP transistor).
4. With the terminal marked positive still connected to the base, repeat the measurement with the positive terminal connected to the emitter. The
reading should again read open circuit (the multimeter should deflect for a PNP transistor).
5. Now reverse the connection to the base of the transistor, this time connecting the negative or common (black) terminal of the analogue test meter to
the base of the transistor.
6. Connect the terminal marked positive, first to the collector and measure the resistance. Then take it to the emitter. In both cases the meter should
deflect (indicate open circuit for a PNP transistor).
7. It is next necessary to connect the meter negative or common to the collector and meter positive to the emitter. Check that the meter reads open
circuit. (The meter should read open circuit for both NPN and PNP types.
8. Now reverse the connections so that the meter negative or common is connected to the emitter and meter positive to the collector. Check again that
the meter reads open circuit.
9. If the transistor passes all the tests then it is basically functional and all the junctions are intact.

Notes:

 The final checks from collector to emitter ensure that the base has not been "blown through". It is sometimes possible that there is still a diode present
between collector and base and the emitter and the base, but the collector and emitter are shorted together.
 As with the germanium diode, the reverse readings for germanium transistors will not be as good as for silicon transistors. A small level of current is
allowable as this results from the presence of minority carriers in the germanium.

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P-N-P Type transistor

It is made of two P-type layers and one N-type layer. In this type, we add two P-type layers, with the two sides of a N-type layer. In this way, we get a P-N
junction and an other N-P junction, we can compare a P-N-P transistor with two diodes, whom N-N type semi conductors are jointed, between the two diodes, One is
called emitter-base diode or emitter diode and other is called collector base or collector diode. In figure 1 (a), there are shown the two junctions of a P-N-P transistor.
In fig l(b), there is a symbolic representation of P-N-P transistor and in fig l(a), there is an equivalent circuit of transistor. In symbolic representation of P-N-P transistor
the direction of arrow is towards inside.

N-P-N Transistor
It is made of two N type and one P-type semiconductor layer. In this, between the two layers of N-type semiconductor, there is a layer of P-type material
the properties of N-P-N transistor of that type are completely opposite to P-N-P transistor. In fig 2(b) the symbolic representation of N-P-N transistor is shown and fig
2(c) shows the diode equivalent circuit of N-P-N transistor. In the symbolic representation of N-P-N transistor the direction of arrow is towards outside.

Identification of N-P-N and P-N-P transistor

With the help of multimeter Sanwa we can identify P-N-P and N-P-N transistor, Irj"this process, by putting multimeter in 1Q range, we measure resistance
between emitter-base and base-collector.We connect Black prob of multimeter to transistor's base and connect red prob to emitter and collector respectively, if
needle of meter shows low resistance (i.e. gives large indication) then transistor is N-P-N transistor.When we connect red prob to base and connect black prob to
emitter and collector respectively and if meter shows low resistance (means large indication) then transistor will be P-N-P transistor.Each transistor will be either P-N-
P type or N-P-N type. So meter shows low resistance only for one checking.
Identification of Germanium or Si transistor

For the construction of transistors two types of semiconductors are used, namely si and Ge. Germanium transistors are generally is metallic body whereas the Si
transistor may be both in metallic or silica body. In this condition it is a difficult job to identify them. By measuring the resistance between emitter and collector by
multimeter sanwa-P-3 we can identify neither the transistor, is P-N-P type nor N-P-N type.For that purpose we connect black lead of multimeter to collector and Red
lead to emitter. If meter shows high resistance (means niddle shows low indication), then we inter change leads of meter, i.e., black lead connected of emitter and
red lead to collector. Now meter shows low resistance (means niddle shows high indication). In this way if resistance between emitter and collector is high and then
come low, then the transistor will be Germanium transistor. Checking method of transistor is shown in fig-10. But if in both processes, the meter shows high
resistance then the transistor will be si transistor.

Identification of Damaged transistor

The damaged transistors may be open circuit, short circuit or become leaky. Checking of that transistors is done by multimeter. To check whether the' transistor is
useful or damaged, we check transistor first of all by P-N-P type. If we check an N-P-N transistor with the process of P-N-P checking and if meter shows low Resistance
between base-emitter or base-collector or both. Then the transistor will be open circuited (Ckted). After above checking, we check whether the transistor is of Ge or
Si. For this we measure resistance between emitter and collector. For a Si Transistor resistance between emitter and collector is very high and the niddle does not
alter it's position. If niddle shows very slight (Small) indication, then transistor will be leaky. In the similar way in Ge transistor niddle should show one time high
resistance and low resistance at other time between emitter and collector. But if both time, the meter shows low resistance then the transistor will be leaky. And if
niddle reach upto Zero, then emitter and collector will be short. Similarly if in Ge Transistor, Meter shows high resistance both times (That is either niddle doer not
more or more slightly) then the emitter and collector of transistor will be leaky and open respectively. In this way we can check the damaged transistor. We replace
the damaged transistor by a new transistor of the same type. Before placing new transistor we should check it also. Many time the new transistor of same number es
not available in market. In this condition we put a transistor of equivalent number. We can find the equivalent number of any transistor from "Equivalent Book" or
'Transistor Comparison Table". This book also gives some other information voltage to transistor which we can give, identification of terminals and packing. There are
giving whole information about some important number's transistors. Which is given in table form in last pages of book. Biasing of Transistor: Giving the necessary
supply to terminals of a transistor, is called biasing. If supply to all terminals is not proper then the transistor will not work properly. We give two types of biasing to
transistor:

 Forward Biasing: Transistor made of two types of semiconductors P-type and N-type. If we give positive supply to P-type and negative supply to N-type,
then it is called forward biasing. Forward biasing is given to base and emitter junction always.

 Reverse Biasing: Giving negative supply to P-type and positive to N-type, is called Reverse Biasing. So in this biasing we give reverse supply to materials.
Reverse bias is always applied to base collector junction. Value of reverse biasing is always larger than forward biasing. In both type of biasing base is
always common, thus there present both forward and reverse bias on the base. For that reason the bias of base is called A.C. signal. Besides it, the input
signal, which we want'to amplify, is also given to base. The base biasing of Transistor depends on input signal. If the base bias is not same as the input
signal (wave) then the wave will not pass through transistor properly and also output will not proper. So we do biasing of base according to the input
wave. That is the proper biasing of base. Now details of N-P-N and P-N-P type transistor's biasing is given. (A) Biasing of P-N-P transistor: In fig-12 biasing of
a P-N-P transistor is shown. Here between base and emitter, we give forward bias i.e. We give positive supply to P-type material. Similarly, we give reverse
bias to base and collector junction i.e. base is given positive supply and collector of P-type in added to negative supply. There are both positive and
negative supplies connected to base, so the negative supply which causes forward bias to base, is of lower value than positive supply connected to base.
Case Information (Most common only)