550 Appendix

Complex Intensity
In general the quantity (pu*) is complex, and the imaginary part is called the reac-
tive intensity [see Section 4.57]. It has a zero time-average value and corresponds
to oscillatory transport of acoustic energy from one part of the sound field to an-
other part or from the sound field to the transducer. The reactive intensity is zero
in an ideal plane wave sound field. In a simple spherical wave, p = (P/r)ej(ωt−kr) ,
the velocity has only a radial component, ur = (p/ρc)(1 + 1/jkr), and the imaginary
part of (pu*) is P2 /ρωr3 , which goes to zero as 1/r3 in the far field rather than 1/r2
as does the time-average intensity. Therefore in most practical situations the re-
active intensity is considered to be negligible, but it may be measurable and have
useful interpretations in some cases. Radiated and scattered fields that have angu-
lar dependence also have velocity and intensity components perpendicular to the
radial direction. In the far field these intensity components also diminish as 1/r3
and become negligible for most purposes.

A.4. Relationships Between Piezoelectric Coefficients

The relationships between the different sets of piezoelectric coefficients are:

3 
6 
3 
6
dmi = T g =
εnm ni em j s Eji gmi = T d =
βnm ni hm j s D
ji
n=1 j=1 n=1 j=1
3 6 
3 6
emi = S h =
εnm ni dm j c Eji h mi = S e =
βnm ni gm j c D
ji
n=1 j=1 n=1 j=1

Since piezoelectric ceramics and piezomagnetic materials have only ten indepen-
dent coefficients (three are piezoelectric or piezomagnetic, two are permittivities
or permeabilities, five are elastic) these relationships simplify for these materials
and may be displayed as:
T g = e s E + e s E + e s E g = βT d = h s D + h s D + h s D
d31 = ε33 31 31 11 31 12 33 13 31 33 31 31 11 31 12 33 13
T g = e s E + e s E + e s E g = βT d = h s D + h s D + h s D
d33 = ε33 33 31 13 31 13 33 33 33 33 33 31 13 31 13 33 33
T g = e sE
d15 = ε11 T d = h sD
g15 = β11
15 15 44 15 15 44
S h = d cE + d cE + d cE h = β S e = g cD + g cD + g cD
e31 = ε33 31 31 11 31 12 33 13 31 33 31 31 11 31 12 33 13
S h = d cE + d cE + d cE h = β S e = g cD + g cD + g cD
e33 = ε33 33 31 13 31 13 33 33 33 33 33 31 13 31 13 33 33
S h = d cE
e15 = ε11 S e = g cD
h 15 = β11
15 15 44 15 15 44
T = 1/ε T and β T = 1/ε T
β33 S = 1/ε S and β S = 1/ε S
β33
33 11 11 33 11 11

With similar relations for magnetostrictive parameters, µT33 , µT11 , etc.

In the following relationships between the elastic constants the superscripts E
or D (or H or B) apply to both c and s in each equation:
2 2
c11 = (s11 s33 − s13 )/(s11 − s12 )[s33 (s11 + s12 ) − 2s13 ] (A4.1)
 Small-Signal Properties of Piezoelectric Ceramics 551

2 2
c12 = −c11 (s12 s33 − s13 )/(s11 s33 − s13 ) (A4.2)
c13 = −c33 s13 /(s11 + s12 ) (A4.3)
2
c33 = (s11 + s12 )/[s33 (s11 + s12 ) − 2s13 ] (A4.4)
c44 = 1/s44 (A4.5)

Analogous relationships hold for sij in terms of cij . The coefficients c66 and s66 are
sometimes used where c66 = 1/s66 and s66 = 2(s11 – s12 ).
With uniform electric-field drive in the polarized 3 direction, the three orthogo-
nal strains are

S1 = s11 T1 + s12 T2 + s13 T3 + d13 E3 , (A4.6)

S2 = s21 T1 + s22 T2 + s23 T3 + d23 E3 , (A4.7)
S3 = s31 T1 + s32 T2 + s33 T3 + d33 E3 , (A4.8)

where s21 = s12 , s22 = s11 , s23 = s31 = s32 = s13 and the sij elastic coefficients are
evaluated for constant E field and normally display a superscript E (short-circuit
condition). For magnetic field drive the E is replaced by H and the sij elastic coeffi-
cients are evaluated for constant H field (open circuit). The relevant Poisson’s ratio
under 33-mode drive, for T1 = T2 = 0, is σ = −s13 /s33 while under 31-mode drive,
for T2 = T3 = 0, the ratios are – s12 /s11 and – s13/ s11 , evaluated under short- and
open-circuit conditions for electric and magnetic field transduction, respectively.
For homogeneous, isotropic materials s13 = s12 , s33 = s11 and s44 = s66 , leav-
ing only two independent elastic constants, although four different elastic con-
stants are commonly used: Young’s modulus, Y = 1/s11 ; shear modulus, µ = 1/s66 ;
Poissons’s ratio, σ = −s12 /s11 and bulk modulus B = [3(s11 + 2s12 )]−1 . The fol-
lowing relationships between these four constants are useful:

B = Y/3(1 − 2σ), µ = Y/2(1 + σ), Y = 2µ(1 + σ), Y = 9Bµ/(µ + 3B).

(A4.9)

A.5. Small-Signal Properties of Piezoelectric Ceramics

[1, 2, 3]
Quantity PZT-8 PZT-4 PZT-5A PZT-5H PMN-.33PT
Type III Type I Type II Type VI Single Crystal
k33 0.64 0.70 0.705 0.752 0.9569
k31 0.30 0.334 0.344 0.388 0.5916
k∗15 0.55 0.513 0.486 0.505 0.3223
k∗p 0.51 0.58 0.60 0.65 0.9290
k∗t 0.48 0.513 0.486 0.505 0.6326
KT33 1000 1300 1700 3400 8200
KS33 600 635 830 1470 679.0
552 Appendix

Quantity PZT-8 PZT-4 PZT-5A PZT-5H PMN-.33PT

Type III Type I Type II Type VI Single Crystal
KT11 1290 1475 1730 3130 1600
KS11 900 730 916 1700 1434
d33 (pC/N) 225 289 374 593 2820
d31 −97 −123 −171 −274 −1335
d15 330 496 584 741 146.1
g33 (Vm/N) 25.4x10−3 26.1x10−3 24.8x10−3 19.7x10−3 38.84x10−3
g31 −10.9 −11.1 −11.4 −9.11 −18.39
g15 28.9 39.4 38.2 26.8 10.31
e33 (C/m2 ) 14.0 15.1 15.8 23.3 20.40
e31 −4.1 −5.2 −5.4 −6.55 −3.390
e15 10.3 12.7 12.3 17.0 10.08
h33 (GV/m) 2.64 2.68 2.15 1.80 3.394
h31 −.77 −.92 −.73 −.505 −.5369
h15 1.29 1.97 1.52 1.13 .7938
sE33 (pm2 /N) 13.5 15.5 18.8 20.7 119.6
sE11 11.5 12.3 16.4 16.5 70.15
sE12 −3.7 −4.05 −5.74 −4.78 −13.19
sE13 −4.8 −5.31 −7.22 −8.45 −55.96
sE44 31.9 39.0 47.5 43.5 14.49
sD
33 8.5 7.90 9.46 8.99 10.08
sD
11 10.1 10.9 14.4 14.05 45.60
sD
12 −4.5 −5.42 −7.71 −7.27 −37.74
sD
13 −2.5 −2.10 −2.98 −3.05 −4.111
sD
44 22.6 19.3 25.2 23.7 12.99
cE33 (GPa) 132 115 111 117 103.8
cE11 149 139 121 126 115.0
cE12 81.1 77.8 75.4 79.5 103.0
cE13 81.1 74.3 75.2 84.1 102.0
cE44 31.3 25.6 21.1 23.0 69.00
cD33 169 159 147 157 173.1
cD11 152 145 126 130 116.9
cD12 84.1 83.9 80.9 82.8 104.9
cD13 70.3 60.9 65.2 72.2 90.49
cD44 44.6 51.8 39.7 42.2 77.00
3
ρ(kg/m ) 7600 7500 7750 7500 8038
Qm 1000 600 75 65
tan δ 0.004 0.004 0.02 0.02 <0.01
Tc (◦ C) 300 330 370 195 —
 Small-Signal Properties of Piezoelectric Ceramics 553

Nominal Properties for Laboratory and Commercial Grade

Single Crystals [2, 3]

Quantity PMN-.33PT PMN-.32PT PMN-.28PT

(Laboratory) (TRS) (TRS)
k33 0.96 0.91 0.86**
k31 0.59 0.51 0.38
k∗15 0.32 0.35 0.35
k∗p 0.93 0.77 0.72
k∗t 0.63 0.62 0.58
KT 33 8200 8266 4366
KT
11 1600 1033 4125
d33 (pC/N) 2820 2280 1100
d31 −1335 −1060 −547
d15 146 127 256
g33 (mV)m/N 38.8 27.3 28.4
g31 −18.4 −14.5 −14.1
g15 10.3 13.8 7.0
sE 2
33 (pm /N) 120 86.5 35.9
sE
11 70.2 59.7 52.5
sE
12 −13.2 −7.7 −23.0
sE
13 −56.0 −43.5 −19.9
sE
44 14.5 15.4 29.0
cE
33 (GPa) 104 129 110
E
c11 115 114 736
cE
12 103 100 603
cE
13 102 112 743
cE
44 69 65 34.5
ρ (kg/m3 ) 8038 8050 7740
Qm — 157 164
tan δ <0.01 <0.01 <0.005
Tc (◦ C) — 166 129
Trt (◦ C) — 85 104
Notes: εii = Kii ε0 where ε0 = 8.842 x 10−12 C/mV. Occasionally, the notation εr is used for
K. *See Section 8.413 for k15 , kp and kt . **The quantity 0.86 is the measured value of k33 .
The calculated value of k33 , from d33 /(sE T 1/2 , is 0.93. The transition temperature T
33 ε33 ) rt
is the temperature for rhombohedral- to tetragonal-phase transition along with a change in
properties. The Curie temperature, Tc , is the temperature at which ceramics are completely
depolarized and lose their piezoelectric properties. The laboratory grade [2] PMN-.33PT
and TRS values listed here were measured by Wewu Cao at Penn State. The material PMN-
.28PT with higher Trt , lower dissipation, and greater stability is more suitable for high-
signal operation.
554 Appendix

A.6. Piezoelectric Ceramic Approximate Frequency

Constants

Frequency PZT-8 PZT-4 PZT-5A PZT-5H Thickness,

Constant (Type III) (Type I) (Type II) (Type VI) Length, Diam.
(kHz m)
Plate, Nt 2 . 11 2 . 03 1 . 98 1 . 98 fxT
Bar, N3l 1 . 57 1 . 50 1 . 40 1 . 40 fxL
Bar, (31) 1 . 70 1 . 65 1 . 47 1 . 45 fxL
Bar, (33) 1 . 57 1 . 47 1 . 37 1 . 32 fxL
Disc, Planar 2 . 34 2 . 29 1 . 93 1 . 96 fxD
Ring, (31) 1 . 07 1 . 04 0 . 914 0 . 914 fxD
Ring, (33) 0 . 990 0 . 927 0 . 851 0 . 813 fxD
Sphere, Nsp 1 . 83 1 . 73 1 . 55 1 . 52 fxD
Hemi Sphere 2 . 27 2 . 14 1 . 92 1 . 89 fxD
(kHz inch)
Plate, Nt 83 80 78 78 fxT
Bar, N3l 62 59 55 55 fxL
Bar, (31) 67 65 58 57 fxL
Bar, (33) 62 58 54 52 fxL
Disc, Planar 92 90 76 77 fxD
Ring, (31) 42 41 36 36 fxD
Ring, (33) 39 36 . 5 33 . 5 32 fxD
Sphere, Nsp 72 68 61 60 fxD
Hemi Sphere 89 84 75 . 5 74 . 5 fxD
Notes: Frequency constants are under short-circuit conditions. Thickness, T, Length, L,
Mean Diameter, D. Nt is for thickness mode plate, N31 is for an end-electroded bar, (31) is
for side-electroded bar, (33) is for a segmented bar of parallel-wired elements, Planar is the
radial mode of a disc, Nsp is for a hollow sphere.

A.7. Small Signal Properties of Magnetostrictive Materials

Nominal 33 Magnetostrictive Properties [4]
Property Terfenol-D Galfenol Metglas
ρ(kg/m3 ) 9250 7900 7400
k33 0.72 0.61 0.92
d33 (nm/A) 15 46 910
 Voltage Divider and Thevenin Equivalent Circuit 555

Property Terfenol-D Galfenol Metglas

YH (GN/m2 ) 26 57 22
B
Y (GN/m ) 2 55 91 140
µT
r 9.3 260 17x103
S
µr 4.5 160 26x103
ρe (µcm) 60 75 130
cH (m/s) 1.7x103 2.7x103 1.7x103
B
c (m/s) 2.4x10 3 3.4x10 3 4.4x103
ρcH (kg/m2 s) 16x106 21x106 13x106
B 2
ρc (kg/m s) 23x10 6 26x10 6 33x106
Notes: Permeability µ = µr µ0 where µ0 = 4πx10−7 . Terfenol-D at compressive stress 18
MPa and 500 Oe bias. Galfenol at compressive stress 20 Mpa and 23 Oe bias. Metglas
2605 SC annealed with 7 kOe transverse field, at compressive stress 0 MPa, magnetic bias
unknown but small.

Three-Dimensional Terfenol-D Properties [5]

Measurements made at 30MPa compressive stress and 1,257 Oe (100kA/m) bias.

k33 = 0.70 k31 = 0.33 k15 = 0.33

µT33 = 3.0µ0 µT11 = 8.1µ0 µS33 = 1.1µ0
d33 = 8.5x10−9 d31 = −4.3x10−9 d15 = 16.5x10−9
sH
33 = 3.8x10
−11 sH
11 = 4.4x10
−11 sH
13 = −1.65x10
−11

sH
12 = −1.1x10
−11 sH
44 = 24x10
−11 sH
66 = 11x10
−11

The values of other properties may be calculated from the relationships given in
A.4.

A.8. Voltage Divider and Thevenin Equivalent Circuit

Voltage dividers and Thevenin circuits are often used in transducer-equivalent cir-
cuit representations. Voltage dividers provide means for simple evaluation while
Thevenin equivalent circuits provide means for a reduction from a more complex
circuit to a simpler two-component circuit. The simple example of Fig. A.1 may
be used to develop both concepts.

Voltage Divider
Figure A.1 shows a voltage source, V, and current I with two series impedances Z1
and Z2 developing an output voltage, V0 , across Z2 at terminals A–B. The source
voltage V = I(Z1 + Z2 ) so that I = V/(Z1 + Z2 ) leading to the output voltage as
V0 = IZ2 or
V0 = V Z2 /(Z1 + Z2 ). (A8.1)