Documente Academic
Documente Profesional
Documente Cultură
1998
tolerance issues mean that the bottom gate of such a structure has to be signi
enormously to the delay through increased overlap capacitance. In this paper, a
processing, the use of a transparent quartz ‘handle’ wafer onto which the delaminated structure is adhered, the use of
the (now) bottom gate electrode as a hardmask for
illumination by g-line light to expose the poly resist
simulation studies to show that it is possible to expos
and bottom gates. This is then tested experimentally
Figure 4 shows that it is indeed possibIe to use wavelengths of this length to obtain
fed into iPHOTO, an in-house resist development simulation package. The results
figure 5.
experiment are shown in the cross section micrograph of Figure 6. The deve
alignment to the underlying poly gate, and further research is currently being
profiles.
Acknowledgments: The authors would like to thank Florence Eschbach of HP for assistance with pol
for simulation help, and R1 for processing assistance.
/Figure 1. Fabrication Sequence for Dual Gate SO1 I Yigure 3. Exposure time measurements for g-
ine resist Cure
...
I Transparent Substrate (Quartz)
I
Figure 2. VIS/UV Measurement of Transmission through Oigure 6. Cross section micrograph of self aligned
Quartz + poly of different thicknesses and conductivities -esist lines on poly as exposed from underneath.
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