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109 Proceeaings 1998 IEEE International SO1 Conference, Oct.

1998

tolerance issues mean that the bottom gate of such a structure has to be signi
enormously to the delay through increased overlap capacitance. In this paper, a

processing, the use of a transparent quartz ‘handle’ wafer onto which the delaminated structure is adhered, the use of
the (now) bottom gate electrode as a hardmask for
illumination by g-line light to expose the poly resist
simulation studies to show that it is possible to expos
and bottom gates. This is then tested experimentally

performed, splitting the top layer, and transferring it to a transparent


gate oxide grown, poly (undoped) deposited, and resist deposited. G
wafer, being absorbed in the doped buried poly regions, and exposing
not act as a mask. The use of g-line resist is made possible by the near
on this below). The poly is now etched, and standard processing contin

time was on the order of tens of hours, figure 3.

Figure 4 shows that it is indeed possibIe to use wavelengths of this length to obtain
fed into iPHOTO, an in-house resist development simulation package. The results
figure 5.

experiment are shown in the cross section micrograph of Figure 6. The deve
alignment to the underlying poly gate, and further research is currently being
profiles.

Acknowledgments: The authors would like to thank Florence Eschbach of HP for assistance with pol
for simulation help, and R1 for processing assistance.

1. ‘Silicon-On-InsulatorTechnology: Materials to VLSI’, J-P. Colinge, Ch. 6-2-3 and refs.


2. M. Bruel, Electronic Letters, vol. 31, p. 1201, 1995.
98CH36199
Proceedings 1998 IEEE International SO1Conference, Oct. 1998 110

/Figure 1. Fabrication Sequence for Dual Gate SO1 I Yigure 3. Exposure time measurements for g-
ine resist Cure

igure 4. Simulation of Intensity of light through


Transparent Substrate (Quartz) .3 um apertures using EMFLEX

Figure 5 . Simulation of resist development


Jsing iPHOTO simulation package

...
I Transparent Substrate (Quartz)
I
Figure 2. VIS/UV Measurement of Transmission through Oigure 6. Cross section micrograph of self aligned
Quartz + poly of different thicknesses and conductivities -esist lines on poly as exposed from underneath.

UV I Vis Spectrum ot Different Thickness poly-Silicon

100

Resist self aligned to


underlying doped poly lines w:
10

200 300 400 500 600 700 800 900


wavelength /nm

' $xpodng Light Source '

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