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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5287

DESCRIPTION
・With TO-3PN package
・High voltage,high speed switching

APPLICATIONS
・For switching regulator and general
purpose applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

体 TO R
导 D U
Absolute maximum ratings(Ta=℃)

半 N
固电 I C O
SYMBOL PARAMETER CONDITIONS VALUE UNIT

E S EM
G
VCBO Collector-base voltage Open emitter 900 V

A N
INCH
VCEO Collector-emitter voltage Open base 550 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 5 A

ICM Collector current-peak 10 A

IB Base current 2.5 A

PC Collector power dissipation TC=25℃ 80 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5287

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 550 V

VCEsat Collector-emitter saturation voltage IC=1.8A; IB=0.36A 0.5 V

VBEsat Base-emitter saturation voltage IC=1.8A; IB=0.36A 1.2 V

ICBO Collector cut-off current VCB=800V; IE=0 100 μA

IEBO Emitter cut-off current VEB=7V; IC=0 100 μA

hFE DC current gain IC=1.8A ; VCE=4V 10 25

COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF

体 TO R
fT

半导
Transition frequency

N D U IE=-0.35A ; VCE=12V 6 MHz

固电 EM I C O
E S
Switching times

A NG
INCH
ton Turn-on time 0.7 μs

IC=1.8A; RL=139Ω
ts Storage time IB1=0.27A; IB2=-0.9A 4.0 μs
VCC=250V

tf Fall time 0.5 μs

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5287

PACKAGE OUTLINE

体 TO R
半导 N D U
固电 EM I C O
G E S
A N
INCH
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC5287

体 TO R
半导 N D U
固电 EM I C O
G E S
A N
INCH

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