2SK3687-01MR 200311

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series
Outline Drawings [mm]
Features TO-220F
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof

Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 600 V
VDSX 600 V VGS=-30V
Continuous drain current ID ±16 A
Pulsed drain current ID(puls] ±64 A
Gate-source voltage VGS ±30 V
Non-Repetitive IAS 16 A Tch<
=150°C
Maximum avalanche current Equivalent circuit schematic
Non-Repetitive EAS 242.7 mJ L=1.74mH
Maximum avalanche energy VCC =60V *1 Drain(D)
Maximum Drain-Source dV/dt dV DS/dt 20 kV/s VDS< =600V
Peak diode recovery dV/dt dV/dt 5 kV/µs *2
Max. power dissipation PD 2.16 W Ta=25°C
97 Tc=25°C
Operating and storage Tch +150 Gate(G)
°C
temperature range Tstg -55 to +150 °C Source(S)
Isolation voltage VISO 2 kVrms t=60sec, f=60Hz
*1 See to Avalanche Energy Graph
*2 IF < = BVDSS, Tch <
= -ID, -di/dt=50A/µs, VCC < = 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 600 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=600V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=480V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=8A VGS=10V 0.42 0.57 Ω
Forward transcondutance gfs ID=8A VDS=25V 6.5 13 S
Input capacitance Ciss VDS =25V 1590 2390 pF
Output capacitance Coss VGS=0V 200 300
Reverse transfer capacitance Crss f=1MHz 8 12
Turn-on time ton td(on) VCC=300V ID=8A 29 43.5 ns
tr VGS=10V 16 24
Turn-off time toff td(off) RGS=10 Ω 58 87
tf 8 12
Total Gate Charge QG V CC=300V 34 51 nC
Gate-Source Charge QGS ID=16A 12 18
Gate-Drain Charge QGD VGS=10V 10 15
Avalanche capability IAV L=1.74mH Tch=25°C 16 A
Diode forward on-voltage V SD IF=16A VGS=0V Tch=25°C 1.00 1.50 V
Reverse recovery time t rr IF=16A VGS=0V 0.68 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 7.8 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.289 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 58.0 °C/W
1
2SK3687-01MR FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation Typical Output Characteristics
120
PD=f(Tc) 50
ID=f(VDS):80 µs pulse test,Tch=25 °C

100
40

80
30 20V

ID [A]
10V
PD [W]

60 8V
7V
20

40
6.5V

10
20
VGS=6.0V

0 0
0 25 50 75 100 125 150 0 4 8 12 16 20 24

Tc [°C] VDS [V]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100 100

10
10
ID[A]

gfs [S]

1
1

0.1

0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80 µ s pulse test,Tch=25°C RDS(on)=f(Tch):ID=8A,VGS=10V
1.0 1.5
VGS=6V 6.5V
1.4
0.9
1.3
0.8 1.2
7V
8V 1.1
0.7
10V
RDS(on) [ Ω ]

1.0
RDS(on) [ Ω ]

0.6 20V
0.9
0.8
0.5
0.7 max.
0.4 0.6
0.5
0.3
typ.
0.4
0.2 0.3
0.2
0.1
0.1
0.0 0.0
0 10 20 30 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

2
2SK3687-01MR FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=16A,Tch=25 °C
7.0 14

6.5

6.0 12

5.5 Vcc= 120V

5.0 max. 10 300V

VGS(th) [V]

4.5 480V

4.0 8

VGS [V]
3.5

3.0 min. 6

2.5

2.0 4

1.5

1.0 2

0.5
0.0 0
-50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60

Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

4
C=f(VDS):VGS=0V,f=1MHz 100
IF=f(VSD):80 µ s pulse test,Tch=25 °C
10

Ciss
3
10

10
C [pF]

IF [A]

2
10
Coss

1
10
Crss

0
10 0.1
10
0
10
1
10
2
10
3 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
10 700

600
IAS=7A

500
2
10
td(off)
IAS=10A
400
EAV [mJ]

td(on)
t [ns]

300
IAS=16A
1
10
tf 200
tr

100

0
10 0
-1 0 1 2
10 10 10 10 0 25 50 75 100 125 150
ID [A] starting Tch [°C]

3
2SK3687-01MR FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

I =f(tAV):starting Tch=25°C,Vcc=50V
2 AV
10

Single Pulse
Avalanche Current I AV [A]

1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10

tAV [sec]

Maximum Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=0
10

0
10
Zth(ch-c) [°C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
t [sec]

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